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公开(公告)号：US20090159431A1
公开(公告)日：2009-06-25
申请号：US11885347
申请日：2006-03-03
CPC分类号： C23C16/34 , C23C16/56 , H01L21/28556 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： A tantalum nitride film-forming method comprises the steps, according to the CVD technique, of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and a halogen gas into a film-forming chamber to thus form a film of a halogenated compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), reacting the halogenated compound film with a hydrogen atom-containing gas by the introduction thereof into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N, and a high compositional ratio: Ta/N, can ensure high adherence to the electrical connection-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：根据CVD技术，引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N-（R， R'）（式中，R和R'可以相同或不同，各自表示碳原子数1〜6的烷基）和卤素气体进入成膜室，从而形成卤化物 由以下通式表示：TaNx（Hal）y（R，R'）z（在该式中，Hal表示卤素原子），通过将卤化化合物膜与含氢原子的气体引入室中 从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，低含量的C和N，并且高的组成比：Ta / N可以确保对电连接形成膜的高粘附性，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US20090104775A1
公开(公告)日：2009-04-23
申请号：US11885345
申请日：2006-03-03
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28556 , H01L21/76859 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A tantalum nitride film rich in tantalum atoms is formed, according to the CVD technique, by simultaneously introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N=(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber, reacting the raw gas with the NH3 gas and forming a reduced compound having Ta—NH3 on a substrate; and then introducing a hydrogen atom-containing gas into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 根据CVD技术，通过同时引入由由具有由以下通式表示的配位配位体的元素钽（Ta）构成的配位化合物构成的原料气体，形成钽原子的氮化钽膜：N =（R ，R'）（式中，R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基）和NH 3气体进入成膜室，使原料气与NH 3气体反应 并在衬底上形成具有Ta-NH 3的还原化合物; 然后将含氢原子的气体引入到室中，从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高的Ta / N可以确保对Cu膜的足够高的粘附性，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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13.发明申请METHOD FOR THE FORMATION OF CO FILM AND METHOD FOR THE FORMATION OF CU INTERCONNECTION FILM 有权形成CO膜的方法和形成CU互连膜的方法公开(公告)号：US20130023116A1
公开(公告)日：2013-01-24
申请号：US13393790
申请日：2010-09-02
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , C23C16/18 , H01L21/28556 , H01L21/28562 , H01L21/32051 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： A Co film is formed by supplying cobalt alkylamidinate, and a combined gas containing H2 gas with at least one member selected from the group consisting of NH3, N2H4, NH (CH3)2, N2H3CH, and N2 as a reducing gas, or at least one gas selected from the group consisting of NH3, N2H4, NH (CH3)2, N2H3CH, and N2 as a reducing gas, on the surface of a base material, which consists of an SiO2 film or a barrier film serving as a primary layer. A Cu interconnection film is formed on the surface of the Co film.
摘要翻译： 通过提供烷基酰胺钴化合物和含有H 2气体的组合气体与选自NH 3，N 2 H 4，NH（CH 3）2，N 2 H 3 CH和N 2中的至少一种作为还原气体形成Co膜，或至少 在由SiO 2膜或作为主层的阻挡膜构成的基材的表面上，选自由NH 3，N 2 H 4，NH（CH 3）2，N 2 H 3 CH和N 2组成的组中的一种气体作为还原气体 。 在Co膜的表面上形成Cu互连膜。
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公开(公告)号：US20100206716A9
公开(公告)日：2010-08-19
申请号：US11885341
申请日：2006-03-03
CPC分类号： H01L21/76859 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH3 gas and then activated H radicals derived from a reactant gas into a vacuum chamber to thus remove the R(R′) groups bonded to the nitrogen atom present in the reaction product through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：将真空气体引入真空室中，所述原料气体由具有由以下通式表示的配位配体的元素Ta组成的配位化合物组成：N =（R，R'）（在 式R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基），从而将气体吸附在基板上; 然后引入NH 3气体，然后将来自反应气体的H自由基活化到真空室中，从而通过裂解除去与反应产物中存在的氮原子键合的R（R'）基团，从而形成氮化钽膜 富含钽原子。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US20090159430A1
公开(公告)日：2009-06-25
申请号：US11885341
申请日：2006-03-03
CPC分类号： H01L21/76859 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH3 gas and then activated H radicals derived from a reactant gas into a vacuum chamber to thus remove the R(R′) groups bonded to the nitrogen atom present in the reaction product through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：将真空气体引入真空室中，所述原料气体由具有由以下通式表示的配位配体的元素Ta构成的配位化合物组成：N-（R，R'）（在 式R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基），从而将气体吸附在基板上; 然后引入NH 3气体，然后将来自反应气体的H自由基活化到真空室中，从而通过裂解除去与反应产物中存在的氮原子键合的R（R'）基团，从而形成氮化钽膜 富含钽原子。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US20090078580A1
公开(公告)日：2009-03-26
申请号：US12085593
申请日：2006-12-04
CPC分类号： H01L23/53238 , H01L21/76843 , H01L21/76856 , H01L21/76864 , H01L21/76877 , H01L2924/0002 , H01L2924/00
摘要： As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a nitride film by sputtering method. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400° C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves.
摘要翻译： 作为阻挡金属膜，通过溅射法在基板上形成Ti膜或Ta膜。 在该阻挡金属膜的顶部，通过溅射法形成氮化物膜。 然后通过CVD法在氮化物膜上形成Cu膜，然后在100-400℃下进行退火处理。由此，通过形成Cu膜，阻挡金属膜与Cu膜之间的粘合性提高。
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公开(公告)号：US20080199601A1
公开(公告)日：2008-08-21
申请号：US11885349
申请日：2006-03-03
IPC分类号： B05D5/12
CPC分类号： C23C16/34 , C23C16/45527 , C23C16/45553 , C23C16/54 , C23C16/56 , H01L21/28562 , H01L21/3215 , H01L21/76843 , H01L21/76859
摘要： The present invention relates to a tantalum nitride film-forming method comprising the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and an oxygen atom-containing gas into a vacuum chamber to thus form a surface adsorption layer having a thickness corresponding to one or several atoms, which consists of a compound represented by the formula: TaOxNy(R, R′)z on a substrate; and then reducing the oxygen atom bonded to the Ta atom in the compound formed through the preceding step and simultaneously removing the R(R′) groups bonded to the nitrogen atom thereof through cleavage, by the introduction of radicals formed from a hydrogen atom-containing gas into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to a Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 本发明涉及一种氮化钽膜形成方法，包括以下步骤：引入由由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物组成的原料气体：N-（R，R' ）（式中，R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基）和含氧原子的气体进入真空室，从而形成具有厚度的表面吸附层 对应于一个或多个原子，其由以下通式表示的化合物组成：TaO x N N（R，R'）z O 底物; 然后还原通过前述步骤形成的化合物中与Ta原子键合的氧原子，同时通过引入由含氢原子形成的自由基来除去与其氮原子键合的R（R'）基团 气体进入室，从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C和N原子含量低，组成比高：Ta / N可以确保对Cu膜的足够高的粘附性，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US06280585B1
公开(公告)日：2001-08-28
申请号：US08963197
申请日：1997-11-03
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/046 , C23C14/35 , H01J37/3402 , H01J2237/3327
摘要： A sputtering apparatus in which the distance between a target and a substrate is made to be at least greater than the diameter of the circular substrate wafer and an internal gas pressure level of a vacuum chamber is held to be not higher than 1×10−1 Pa during sputtering process, thereby capable of effectively filling pores provided on the substrate without generating dust and void spaces.
摘要翻译： 将靶和衬底之间的距离设定为至少大于圆形衬底晶片的直径并将真空室的内部气体压力水平保持为不高于1×10 -1 Pa的溅射装置， 从而能够有效地填充设置在基板上的孔而不产生灰尘和空隙。
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公开(公告)号：US09005413B2
公开(公告)日：2015-04-14
申请号：US13382543
申请日：2010-07-15
申请人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
发明人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
IPC分类号： C23C14/34 , C23C14/35 , H01L21/285
CPC分类号： C23C14/35 , C23C14/351 , H01L21/2855
摘要： A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.
摘要翻译： 一种成膜装置包括：具有内部空间的室，其中被处理体和目标物都被设置成使得被处理体和目标物彼此相对;第一磁场产生部，其产生磁性 目标曝光的内部空间中的场; 产生垂直磁场的第二磁场产生部分，以允许其垂直磁力线在被处理体之间通过; 以及第三磁场产生部，设置在所述目标的上游侧，从所述第二磁场产生部观察。
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公开(公告)号：US08796142B2
公开(公告)日：2014-08-05
申请号：US11885345
申请日：2006-03-03
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28556 , H01L21/76859 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A tantalum nitride film rich in tantalum atoms is formed by simultaneously introducing a raw gas consisting of a coordination compound of elemental tantalum (Ta) having a coordinated ligand of formula: N═(R, R′) (wherein, R and R′ each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber; reacting the raw gas with the NH3 gas; forming a reduced compound having Ta—NH3 on a substrate; and introducing a hydrogen atom-containing gas into the chamber to form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, show sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to further enrich the film with tantalum.
摘要翻译： 通过同时引入由具有以下结构的配位配体的元素钽（Ta）的配位化合物组成的原料气体，形成富含钽原子的氮化钽膜：N =（R，R'）（其中，R和R'各自 代表具有1至6个碳原子的烷基）和NH 3气体进入成膜室; 使原料气与NH 3气反应; 在基材上形成具有Ta-NH 3的还原化合物; 并将含氢原子的气体引入到室中以形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C和N原子含量低，组成比高：Ta / N对Cu膜具有足够高的粘附性，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得膜中，以进一步用钽来富集膜。
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