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公开(公告)号：US08158198B2
公开(公告)日：2012-04-17
申请号：US11885399
申请日：2006-03-03
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45536 , C23C16/4554 , C23C16/45553 , H01L21/28562
摘要： A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta—N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R′) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N =（R，R'）（式 R和R'可以相同或不同，各自表示碳原子数1〜6的烷基），卤素气体进入真空室; 并将这些组分彼此反应在基底上，从而形成包含单原子或多（多个）原子层的表面吸附膜，并由以下通式表示的化合物组成：TaNx（Hal）y（R， R'）z（式中，Hal表示卤素原子），然后引入由含H原子的化合物产生的自由基，从而通过其残留除去所得化合物中存在的Ta-N键，同时除去 剩余的R（R'）基团通过其切割而与化合物中存在的N原子键合，从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US08796142B2
公开(公告)日：2014-08-05
申请号：US11885345
申请日：2006-03-03
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28556 , H01L21/76859 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A tantalum nitride film rich in tantalum atoms is formed by simultaneously introducing a raw gas consisting of a coordination compound of elemental tantalum (Ta) having a coordinated ligand of formula: N═(R, R′) (wherein, R and R′ each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber; reacting the raw gas with the NH3 gas; forming a reduced compound having Ta—NH3 on a substrate; and introducing a hydrogen atom-containing gas into the chamber to form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, show sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to further enrich the film with tantalum.
摘要翻译： 通过同时引入由具有以下结构的配位配体的元素钽（Ta）的配位化合物组成的原料气体，形成富含钽原子的氮化钽膜：N =（R，R'）（其中，R和R'各自 代表具有1至6个碳原子的烷基）和NH 3气体进入成膜室; 使原料气与NH 3气反应; 在基材上形成具有Ta-NH 3的还原化合物; 并将含氢原子的气体引入到室中以形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C和N原子含量低，组成比高：Ta / N对Cu膜具有足够高的粘附性，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得膜中，以进一步用钽来富集膜。
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公开(公告)号：US20090162565A1
公开(公告)日：2009-06-25
申请号：US11885350
申请日：2006-03-03
CPC分类号： C23C16/34 , C23C14/18 , C23C14/48 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A tantalum nitride film is formed by introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and an oxygen atom-containing gas into a film-forming chamber to make them react with one another on a substrate and to thus form a compound represented by the formula: TaOxNy(R,R′)z according to the CVD technique; and then introducing an H atom-containing gas into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the electrical connection-forming film and can thus be useful as a barrier film. Moreover, tantalum particles can be implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 通过引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体形成氮化钽膜：N-（R，R'）（在式中，R和R '可以相同或不同，并且各自表示具有1至6个碳原子的烷基）和含氧原子的气体进入成膜室，以使它们在基材上彼此反应，从而形成表示的化合物 根据CVD技术，通式为TaOxNy（R，R'）z; 然后将含H原子的气体引入到室中，从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高的Ta / N可以确保对连接形成膜的粘附性足够高，因此可用作阻挡膜。 此外，可以根据溅射技术将钽颗粒注入到所得膜中，从而进一步用钽富集膜。
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公开(公告)号：US08105468B2
公开(公告)日：2012-01-31
申请号：US11885341
申请日：2006-03-03
CPC分类号： H01L21/76859 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH3 gas and then activated H radicals derived from a reactant gas into a vacuum chamber to thus remove the R(R′) groups bonded to the nitrogen atom present in the reaction product through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：将真空气体引入真空室中，所述原料气体由具有由以下通式表示的配位配体的元素Ta组成的配位化合物组成：N =（R，R'）（在 式R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基），从而将气体吸附在基板上; 然后引入NH 3气体，然后将来自反应气体的H自由基活化到真空室中，从而通过裂解除去与反应产物中存在的氮原子键合的R（R'）基团，从而形成氮化钽膜 富含钽原子。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US08158197B2
公开(公告)日：2012-04-17
申请号：US11885347
申请日：2006-03-03
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/56 , H01L21/28556 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： A tantalum nitride film-forming method comprises the steps, according to the CVD technique, of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and a halogen gas into a film-forming chamber to thus form a film of a halogenated compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), reacting the halogenated compound film with a hydrogen atom-containing gas by the introduction thereof into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N, and a high compositional ratio: Ta/N, can ensure high adherence to the electrical connection-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：根据CVD技术引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物组成的原料气体：N =（R， R'）（式中，R和R'可以相同或不同，各自表示碳原子数1〜6的烷基）和卤素气体进入成膜室，从而形成卤化物 由以下通式表示：TaNx（Hal）y（R，R'）z（在该式中，Hal表示卤素原子），通过将卤化化合物膜与含氢原子的气体引入室中 从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，低含量的C和N，并且高的组成比：Ta / N可以确保对电连接形成膜的高粘附性，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US20090159431A1
公开(公告)日：2009-06-25
申请号：US11885347
申请日：2006-03-03
CPC分类号： C23C16/34 , C23C16/56 , H01L21/28556 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： A tantalum nitride film-forming method comprises the steps, according to the CVD technique, of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and a halogen gas into a film-forming chamber to thus form a film of a halogenated compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), reacting the halogenated compound film with a hydrogen atom-containing gas by the introduction thereof into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N, and a high compositional ratio: Ta/N, can ensure high adherence to the electrical connection-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：根据CVD技术，引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N-（R， R'）（式中，R和R'可以相同或不同，各自表示碳原子数1〜6的烷基）和卤素气体进入成膜室，从而形成卤化物 由以下通式表示：TaNx（Hal）y（R，R'）z（在该式中，Hal表示卤素原子），通过将卤化化合物膜与含氢原子的气体引入室中 从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，低含量的C和N，并且高的组成比：Ta / N可以确保对电连接形成膜的高粘附性，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US20090104775A1
公开(公告)日：2009-04-23
申请号：US11885345
申请日：2006-03-03
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28556 , H01L21/76859 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A tantalum nitride film rich in tantalum atoms is formed, according to the CVD technique, by simultaneously introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N=(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber, reacting the raw gas with the NH3 gas and forming a reduced compound having Ta—NH3 on a substrate; and then introducing a hydrogen atom-containing gas into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 根据CVD技术，通过同时引入由由具有由以下通式表示的配位配位体的元素钽（Ta）构成的配位化合物构成的原料气体，形成钽原子的氮化钽膜：N =（R ，R'）（式中，R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基）和NH 3气体进入成膜室，使原料气与NH 3气体反应 并在衬底上形成具有Ta-NH 3的还原化合物; 然后将含氢原子的气体引入到室中，从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高的Ta / N可以确保对Cu膜的足够高的粘附性，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US20100206716A9
公开(公告)日：2010-08-19
申请号：US11885341
申请日：2006-03-03
CPC分类号： H01L21/76859 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH3 gas and then activated H radicals derived from a reactant gas into a vacuum chamber to thus remove the R(R′) groups bonded to the nitrogen atom present in the reaction product through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：将真空气体引入真空室中，所述原料气体由具有由以下通式表示的配位配体的元素Ta组成的配位化合物组成：N =（R，R'）（在 式R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基），从而将气体吸附在基板上; 然后引入NH 3气体，然后将来自反应气体的H自由基活化到真空室中，从而通过裂解除去与反应产物中存在的氮原子键合的R（R'）基团，从而形成氮化钽膜 富含钽原子。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US20090159430A1
公开(公告)日：2009-06-25
申请号：US11885341
申请日：2006-03-03
CPC分类号： H01L21/76859 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH3 gas and then activated H radicals derived from a reactant gas into a vacuum chamber to thus remove the R(R′) groups bonded to the nitrogen atom present in the reaction product through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 氮化钽膜形成方法包括以下步骤：将真空气体引入真空室中，所述原料气体由具有由以下通式表示的配位配体的元素Ta构成的配位化合物组成：N-（R，R'）（在 式R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基），从而将气体吸附在基板上; 然后引入NH 3气体，然后将来自反应气体的H自由基活化到真空室中，从而通过裂解除去与反应产物中存在的氮原子键合的R（R'）基团，从而形成氮化钽膜 富含钽原子。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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公开(公告)号：US20080199601A1
公开(公告)日：2008-08-21
申请号：US11885349
申请日：2006-03-03
IPC分类号： B05D5/12
CPC分类号： C23C16/34 , C23C16/45527 , C23C16/45553 , C23C16/54 , C23C16/56 , H01L21/28562 , H01L21/3215 , H01L21/76843 , H01L21/76859
摘要： The present invention relates to a tantalum nitride film-forming method comprising the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and an oxygen atom-containing gas into a vacuum chamber to thus form a surface adsorption layer having a thickness corresponding to one or several atoms, which consists of a compound represented by the formula: TaOxNy(R, R′)z on a substrate; and then reducing the oxygen atom bonded to the Ta atom in the compound formed through the preceding step and simultaneously removing the R(R′) groups bonded to the nitrogen atom thereof through cleavage, by the introduction of radicals formed from a hydrogen atom-containing gas into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to a Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译： 本发明涉及一种氮化钽膜形成方法，包括以下步骤：引入由由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物组成的原料气体：N-（R，R' ）（式中，R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基）和含氧原子的气体进入真空室，从而形成具有厚度的表面吸附层 对应于一个或多个原子，其由以下通式表示的化合物组成：TaO x N N（R，R'）z O 底物; 然后还原通过前述步骤形成的化合物中与Ta原子键合的氧原子，同时通过引入由含氢原子形成的自由基来除去与其氮原子键合的R（R'）基团 气体进入室，从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C和N原子含量低，组成比高：Ta / N可以确保对Cu膜的足够高的粘附性，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。
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