公开(公告)号：US20120043578A1

公开(公告)日：2012-02-23

申请号：US13214601

申请日：2011-08-22

申请人： Su-Hui Lin ,  Jyh-Chiarng Wu

发明人： Su-Hui Lin ,  Jyh-Chiarng Wu

IPC分类号： H01L33/36

CPC分类号： H01L33/12 ,  H01L33/22

摘要： A GaN-based LED and a method for manufacturing the same are provided, and the method includes: providing a substrate, depositing a first transition layer on the substrate; forming a first patterned transition layer by etching with a mask; growing a first epitaxial layer on the first patterned transition layer; depositing a second transition layer on the first epitaxial layer; forming a second patterned transition layer by etching with a mask, such that the second patterned transition layer and the first patterned transition layer are cross-staggered with each other; growing a second epitaxial layer on the second patterned transition layer, wherein the second epitaxial layer includes a P-type layer, a light-emitting layer and an N-type layer; depositing a protection layer on the second epitaxial layer, dicing to obtain chips with a defined size; removing the first patterned transition layer and the second patterned transition layer on the substrate and the protection layer on the second epitaxial layer by wet etching, so as to form a structure with two layers of cross-staggered through holes; forming a conductive layer on the second epitaxial layer; and forming a P-electrode and an N-electrode by etching with a mask. The two layers of cross-staggered through holes of the LED chips can effectively reduce the dislocation density in the epitaxial growth of the GaN-based layer, and improve the lattice quality and luminous efficiency.

摘要翻译： 提供GaN基LED及其制造方法，该方法包括：提供基板，在基板上沉积第一过渡层; 通过用掩模蚀刻形成第一图案化过渡层; 在第一图案化过渡层上生长第一外延层; 在所述第一外延层上沉积第二过渡层; 通过用掩模蚀刻形成第二图案化过渡层，使得第二图案化过渡层和第一图案化过渡层彼此交叉交错; 在第二图案化过渡层上生长第二外延层，其中第二外延层包括P型层，发光层和N型层; 在第二外延层上沉积保护层，切割以获得具有规定尺寸的芯片; 通过湿蚀刻去除衬底上的第一图案化过渡层和第二图案化过渡层和第二外延层上的保护层，以形成具有两层交错通孔的结构; 在所述第二外延层上形成导电层; 用掩模蚀刻形成P电极和N电极。 LED芯片的交错交叉的两层通孔可以有效地降低GaN基层的外延生长中的位错密度，提高晶格质量和发光效率。

公开(公告)号：US07947991B2

公开(公告)日：2011-05-24

申请号：US12181916

申请日：2008-07-29

申请人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

发明人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

IPC分类号： H01L27/15

CPC分类号： H01L33/46 ,  H01L33/405

摘要： A high efficiency lighting device comprising a light emitting diode structure, an eutectic layer and a distributed-Bragg reflecting layer (DBR) therebetween is disclosed. The distributed-Bragg reflecting layer is attached to said light emitting diode structure by vapor deposition and comprises a plurality of high refraction layers, a plurality of low refraction layers and a micro-contact layer array. The high refraction layers and said low refraction layers are arranged in an alternating manner, so as to form a stacked thin film having an alternate high/low refraction pattern. The micro-contact layers are in said stacked thin film and extend vertically through the stacked thin film, therefore connecting said light emitting diode structure and said eutectic layer.

摘要翻译： 公开了一种包括发光二极管结构，共晶层和分布布拉格反射层（DBR）之间的高效照明装置。 分布式布拉格反射层通过气相沉积附着到所述发光二极管结构，并且包括多个高折射层，多个低折射层和微接触层阵列。 高折射层和所述低折射层以交替的方式布置，以形成具有交替的高/低折射图案的叠层薄膜。 微接触层位于所述层叠的薄膜中并且垂直延伸穿过层叠的薄膜，因此连接所述发光二极管结构和所述共晶层。

公开(公告)号：US20100025705A1

公开(公告)日：2010-02-04

申请号：US12182289

申请日：2008-07-30

申请人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

发明人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/22 ,  H01L2933/0016

摘要： A high efficiency luminous device and a manufacturing method thereof are disclosed. The high efficiency luminous device includes a LED structure, a first metal electrode, and a second metal electrode. The LED structure is for emitting light. The first metal electrode is formed on the LED structure, and the first metal electrode has a plurality of first openings therein. The second metal electrode is formed on the LED structure, and the second metal electrode has a plurality of second openings therein. The plurality of first openings and the plurality of second openings allow the light emitted from the LED structure to pass therethrough.

摘要翻译： 公开了一种高效率发光装置及其制造方法。 高效率发光器件包括LED结构，第一金属电极和第二金属电极。 LED结构用于发光。 第一金属电极形成在LED结构上，第一金属电极在其中具有多个第一开口。 第二金属电极形成在LED结构上，第二金属电极在其中具有多个第二开口。 多个第一开口和多个第二开口允许从LED结构发射的光通过。

公开(公告)号：US20080258163A1

公开(公告)日：2008-10-23

申请号：US12081595

申请日：2008-04-17

申请人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

发明人： Wei-Kai Wang ,  Su-Hui Lin ,  Wen-Chung Shih

IPC分类号： H01L33/00 ,  H01L21/302

CPC分类号： H01L33/20 ,  H01L33/22

摘要： The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is formed on the substrate and includes a light-emitting region. The top-most layer is formed on the multi-layer structure, and the lower part of the sidewall of the top-most layer exhibits a first surface morphology relative to a first pattern. In addition, the upper part of the sidewall of the top-most layer exhibits a second surface morphology relative to a second pattern. The at least one electrode is formed on the top-most layer. Therefore, the sidewall of the semiconductor light-emitting device according to the invention exhibits a surface morphology, which increases the light-extraction area of the sidewall, and consequently enhances the light-extraction efficiency of the semiconductor light-emitting device.

摘要翻译： 本发明公开了一种半导体发光器件及其制造方法。 根据本发明的半导体发光器件包括衬底，多层结构，最顶层和至少一个电极。 多层结构形成在基板上并且包括发光区域。 最顶层形成在多层结构上，最顶层的侧壁的下部表现出相对于第一图案的第一表面形态。 此外，最顶层的侧壁的上部相对于第二图案显示出第二表面形态。 至少一个电极形成在最上层。 因此，根据本发明的半导体发光器件的侧壁呈现表面形态，这增加了侧壁的光提取面积，从而提高了半导体发光器件的光提取效率。

公开(公告)号：US07821017B2

公开(公告)日：2010-10-26

申请号：US12426471

申请日：2009-04-20

申请人： Chi-Shen Lee ,  Su-Hui Lin

发明人： Chi-Shen Lee ,  Su-Hui Lin

IPC分类号： H01L29/167

CPC分类号： H01L33/007 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

摘要： The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) forming a mask layer on a first region of the upper surface of the epitaxial layer; (d) forming a semiconductor multi-layer structure on a second region of the upper surface of the epitaxial layer, wherein the second region is distinct from the first region; (e) removing the mask layer formed on the first region of the upper surface of the epitaxial layer; and (f) forming an electrode on the first region of the upper surface of the epitaxial layer.

摘要翻译： 本发明公开了一种制造发光二极管的方法。 在本发明的一个实施方案中，该方法包括以下步骤：（a）制备底物; （b）在所述衬底上形成外延层，其中所述外延层具有上表面; （c）在所述外延层的上表面的第一区域上形成掩模层; （d）在所述外延层的上表面的第二区域上形成半导体多层结构，其中所述第二区域与所述第一区域不同; （e）去除形成在外延层的上表面的第一区域上的掩模层; 和（f）在外延层的上表面的第一区域上形成电极。

公开(公告)号：US07804104B2

公开(公告)日：2010-09-28

申请号：US12421869

申请日：2009-04-10

申请人： Su-Hui Lin ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

发明人： Su-Hui Lin ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

IPC分类号： H01L27/15

CPC分类号： H01L33/46 ,  H01L33/387 ,  H01L2933/0083

摘要： The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.

摘要翻译： 本发明公开了一种发光二极管，包括基板，第一导电型半导体层，第二导电型半导体层，发光层和多层叠结构。 依次在基板上形成第一导电型半导体层，发光层和第二导电型半导体层。 在第二导电型半导体层的上表面上形成多个叠层结构，使得上表面部分露出。 每个层压结构由至少一个具有高折射率的第一绝缘层和至少一个具有低折射率的第二绝缘层组成，其中至少一个第一绝缘层和至少一个第二绝缘层交替地形成以获得 说每个层压结构。 由此，从发光层发出的光可以被叠层结构反射，以提高光提取效率。

公开(公告)号：US20100176419A1

公开(公告)日：2010-07-15

申请号：US12421872

申请日：2009-04-10

申请人： Su-Hui LIN ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

发明人： Su-Hui LIN ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/42

摘要： The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.

摘要翻译： 本发明公开了一种发光二极管。 在一个实施例中，发光二极管包括基板，第一掺杂型半导体层，第二掺杂型半导体层，发光层和多个叠​​层结构。 依次在基板上形成第一掺杂型半导体层，发光层和第二掺杂型半导体层。 多个叠层结构形成在第二掺杂型半导体层的顶表面上，使得顶表面部分露出。 每个层压结构由具有各自折射率的多个透明绝缘层组成。 另外，各层叠结构体以与透明绝缘层的折射率逐渐降低的顺序向上堆叠透明绝缘层的方式形成，从而提高发光体的光提取效率和照明效率， 发光二极管。

公开(公告)号：US20090212312A1

公开(公告)日：2009-08-27

申请号：US12269499

申请日：2008-11-12

申请人： Tzong-Liang TSAI ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong-Liang TSAI ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 每个凸块结构由ITO，SiO2，SiN，ZnO，聚酰亚胺，BCB，SOG，InO或SnO制成。

公开(公告)号：US20090212311A1

公开(公告)日：2009-08-27

申请号：US12184933

申请日：2008-08-01

申请人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

公开(公告)号：US08247837B2

公开(公告)日：2012-08-21

申请号：US12421872

申请日：2009-04-10

申请人： Su-Hui Lin ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

发明人： Su-Hui Lin ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/42

摘要： The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.

摘要翻译： 本发明公开了一种发光二极管。 在一个实施例中，发光二极管包括基板，第一掺杂型半导体层，第二掺杂型半导体层，发光层和多个叠​​层结构。 依次在基板上形成第一掺杂型半导体层，发光层和第二掺杂型半导体层。 多个叠层结构形成在第二掺杂型半导体层的顶表面上，使得顶表面部分露出。 每个层压结构由具有各自折射率的多个透明绝缘层组成。 另外，各层叠结构体以与透明绝缘层的折射率逐渐降低的顺序向上堆积透明绝缘层的方式形成，从而提高发光体的光提取效率和照明效率， 发光二极管。