公开(公告)号：US08507357B2

公开(公告)日：2013-08-13

申请号：US13352812

申请日：2012-01-18

申请人： Su-Hui Lin ,  Sheng-Hsien Hsu ,  Kang-Wei Peng ,  Jiansen Zheng ,  Jyh-Chiarng Wu ,  Keehuang Lin

发明人： Su-Hui Lin ,  Sheng-Hsien Hsu ,  Kang-Wei Peng ,  Jiansen Zheng ,  Jyh-Chiarng Wu ,  Keehuang Lin

IPC分类号： H01L21/0242

CPC分类号： H01L33/0079 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/20

摘要： The present invention discloses a method for lift-off of an LED substrate. By eroding the sidewall of a GaN epitaxial layer, cavity structures are formed, which may act in cooperation with a non-fully filled patterned sapphire substrate from epitaxial growth to cause the GaN epitaxial layer to separate from the sapphire substrate. The method according to an embodiment of the present invention can effectively reduce the dislocation density in the growth of a GaN-based epitaxial layer; improve lattice quality, and realize rapid lift-off of an LED substrate, and has the advantages including low cost, no internal damage to the GaN film, elevated performance of the photoelectric device and improved luminous efficiency.

摘要翻译： 本发明公开了一种用于剥离LED基板的方法。 通过蚀刻GaN外延层的侧壁，形成空腔结构，其可以与外延生长中的非完全填充的图案化蓝宝石衬底配合起作用，从而使GaN外延层与蓝宝石衬底分离。 根据本发明的实施方案的方法可以有效地降低GaN基外延层的生长中的位错密度; 提高晶格质量，实现LED基板的快速剥离，具有成本低，对GaN薄膜无内部损坏，光电器件性能提高，发光效率高等优点。

公开(公告)号：US08436377B2

公开(公告)日：2013-05-07

申请号：US13214601

申请日：2011-08-22

申请人： Su-Hui Lin ,  Jyh-Chiarng Wu

发明人： Su-Hui Lin ,  Jyh-Chiarng Wu

IPC分类号： H01L21/20 ,  H01L33/12 ,  H01L33/18

CPC分类号： H01L33/12 ,  H01L33/22

摘要： A GaN-based LED and a method for manufacturing the same are provided, and the method includes: providing a substrate, depositing a first transition layer on the substrate; forming a first patterned transition layer by etching with a mask; growing a first epitaxial layer on the first patterned transition layer; depositing a second transition layer on the first epitaxial layer; forming a second patterned transition layer by etching with a mask, such that the second patterned transition layer and the first patterned transition layer are cross-staggered with each other; growing a second epitaxial layer on the second patterned transition layer, wherein the second epitaxial layer includes a P-type layer, a light-emitting layer and an N-type layer; depositing a protection layer on the second epitaxial layer, dicing to obtain chips with a defined size; removing the first patterned transition layer and the second patterned transition layer on the substrate and the protection layer on the second epitaxial layer by wet etching, so as to form a structure with two layers of cross-staggered through holes; forming a conductive layer on the second epitaxial layer; and forming a P-electrode and an N-electrode by etching with a mask. The two layers of cross-staggered through holes of the LED chips can effectively reduce the dislocation density in the epitaxial growth of the GaN-based layer, and improve the lattice quality and luminous efficiency.

摘要翻译： 提供GaN基LED及其制造方法，该方法包括：提供基板，在基板上沉积第一过渡层; 通过用掩模蚀刻形成第一图案化过渡层; 在第一图案化过渡层上生长第一外延层; 在所述第一外延层上沉积第二过渡层; 通过用掩模蚀刻形成第二图案化过渡层，使得第二图案化过渡层和第一图案化过渡层彼此交叉交错; 在第二图案化过渡层上生长第二外延层，其中第二外延层包括P型层，发光层和N型层; 在第二外延层上沉积保护层，切割以获得具有规定尺寸的芯片; 通过湿蚀刻去除衬底上的第一图案化过渡层和第二图案化过渡层和第二外延层上的保护层，以形成具有两层交错通孔的结构; 在所述第二外延层上形成导电层; 用掩模蚀刻形成P电极和N电极。 LED芯片的交错交叉的两层通孔可以有效地降低GaN基层的外延生长中的位错密度，提高晶格质量和发光效率。

公开(公告)号：US20120190148A1

公开(公告)日：2012-07-26

申请号：US13352812

申请日：2012-01-18

申请人： SU-HUI LIN ,  SHENG-HSIEN HSU ,  KANG-WEI PENG ,  JIANSEN ZHENG ,  JYH-CHIARNG WU ,  KECHUANG LIN

发明人： SU-HUI LIN ,  SHENG-HSIEN HSU ,  KANG-WEI PENG ,  JIANSEN ZHENG ,  JYH-CHIARNG WU ,  KECHUANG LIN

IPC分类号： H01L33/32

CPC分类号： H01L33/0079 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/20

摘要： The present invention discloses a method for lift-off of an LED substrate. By eroding the sidewall of a GaN epitaxial layer, cavity structures are formed, which may act in cooperation with a non-fully filled patterned sapphire substrate from epitaxial growth to cause the GaN epitaxial layer to separate from the sapphire substrate. The method according to an embodiment of the present invention can effectively reduce the dislocation density in the growth of a GaN-based epitaxial layer; improve lattice quality, and realize rapid lift-off of an LED substrate, and has the advantages including low cost, no internal damage to the GaN film, elevated performance of the photoelectric device and improved luminous efficiency.

摘要翻译： 本发明公开了一种用于剥离LED基板的方法。 通过蚀刻GaN外延层的侧壁，形成空腔结构，其可以与外延生长中的非完全填充的图案化蓝宝石衬底配合起作用，从而使GaN外延层与蓝宝石衬底分离。 根据本发明的实施方案的方法可以有效地降低GaN基外延层的生长中的位错密度; 提高晶格质量，实现LED基板的快速剥离，具有成本低，对GaN薄膜无内部损坏，光电器件性能提高，发光效率高等优点。

公开(公告)号：US07923744B2

公开(公告)日：2011-04-12

申请号：US12755019

申请日：2010-04-06

申请人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong-Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L29/26

CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 在每个凸块结构的侧壁中形成至少一个凹部。 或者，每个凸块结构的侧壁具有弯曲的轮廓。

公开(公告)号：US20100230706A1

公开(公告)日：2010-09-16

申请号：US12755019

申请日：2010-04-06

申请人： Tzong Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

发明人： Tzong Liang Tsai ,  Wei-Kai Wang ,  Su-Hui Lin ,  Yi-Cun Lu

IPC分类号： H01L33/02

CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L2933/0091

摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

摘要翻译： 本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块 结构。 第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。 第一电极形成在第一区域上。 在第二区域上形成发光层和第二导电型半导体材料层。 凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。 在每个凸块结构的侧壁中形成至少一个凹部。 或者，每个凸块结构的侧壁具有弯曲的轮廓。

公开(公告)号：US08232567B2

公开(公告)日：2012-07-31

申请号：US12425730

申请日：2009-04-17

申请人： Jing-Jie Dai ,  Wen-Chung Shih ,  Bo-Yuan Huang ,  Su-Hui Lin ,  Yu-Chieh Huang

发明人： Jing-Jie Dai ,  Wen-Chung Shih ,  Bo-Yuan Huang ,  Su-Hui Lin ,  Yu-Chieh Huang

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/42

摘要： A light emitting device, includes a substrate; a first semiconductor layer on the substrate; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a transparent conductive layer on the second semiconductor layer; and a plurality of pillar structures with a hollow structure in the portion surface of the first semiconductor layer, thereby, the light extraction efficiency of the light emitting device can be improved due to the pillar structures with a hollow structure.

摘要翻译： 发光装置，包括基板; 在所述基板上的第一半导体层; 在第一半导体层上的有源层; 有源层上的第二半导体层; 在所述第二半导体层上的透明导电层; 以及在第一半导体层的部分表面中具有中空结构的多个柱结构，从而由于具有中空结构的柱结构，可以提高发光器件的光提取效率。

公开(公告)号：US20100244053A1

公开(公告)日：2010-09-30

申请号：US12425730

申请日：2009-04-17

申请人： Jing-Jie DAI ,  Wen-Chung Shih ,  Bo-Yuan Huang ,  Su-Hui Lin ,  Yu-Chieh Huang

发明人： Jing-Jie DAI ,  Wen-Chung Shih ,  Bo-Yuan Huang ,  Su-Hui Lin ,  Yu-Chieh Huang

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/42

摘要： A light emitting device, includes a substrate; a first semiconductor layer on the substrate; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; a transparent conductive layer on the second semiconductor layer; and a plurality of pillar structures with a hollow structure in the portion surface of the first semiconductor layer, thereby, the light extraction efficiency of the light emitting device can be improved due to the pillar structures with a hollow structure.

摘要翻译： 发光装置，包括基板; 在所述基板上的第一半导体层; 在第一半导体层上的有源层; 有源层上的第二半导体层; 在所述第二半导体层上的透明导电层; 以及在第一半导体层的部分表面中具有中空结构的多个柱结构，从而由于具有中空结构的柱结构，可以提高发光器件的光提取效率。

公开(公告)号：US20100176408A1

公开(公告)日：2010-07-15

申请号：US12421869

申请日：2009-04-10

申请人： Su-Hui LIN ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

发明人： Su-Hui LIN ,  Sheng-Hsien Hsu ,  Jing-Jie Dai ,  Tzong Liang Tsai

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/387 ,  H01L2933/0083

摘要： The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.

摘要翻译： 本发明公开了一种发光二极管，包括基板，第一导电型半导体层，第二导电型半导体层，发光层和多层叠结构。 依次在基板上形成第一导电型半导体层，发光层和第二导电型半导体层。 在第二导电型半导体层的上表面上形成多个叠层结构，使得上表面部分露出。 每个层压结构由至少一个具有高折射率的第一绝缘层和至少一个具有低折射率的第二绝缘层组成，其中至少一个第一绝缘层和至少一个第二绝缘层交替地形成以获得 说每个层压结构。 由此，从发光层发出的光可以被叠层结构反射，以提高光提取效率。

公开(公告)号：US20100140629A1

公开(公告)日：2010-06-10

申请号：US12426471

申请日：2009-04-20

申请人： Chi-Shen LEE ,  Su-Hui LIN

发明人： Chi-Shen LEE ,  Su-Hui LIN

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/007 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

摘要： The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) forming a mask layer on a first region of the upper surface of the epitaxial layer; (d) forming a semiconductor multi-layer structure on a second region of the upper surface of the epitaxial layer, wherein the second region is distinct from the first region; (e) removing the mask layer formed on the first region of the upper surface of the epitaxial layer; and (f) forming an electrode on the first region of the upper surface of the epitaxial layer.

摘要翻译： 本发明公开了一种制造发光二极管的方法。 在本发明的一个实施方案中，该方法包括以下步骤：（a）制备底物; （b）在所述衬底上形成外延层，其中所述外延层具有上表面; （c）在所述外延层的上表面的第一区域上形成掩模层; （d）在所述外延层的上表面的第二区域上形成半导体多层结构，其中所述第二区域与所述第一区域不同; （e）去除形成在外延层的上表面的第一区域上的掩模层; 和（f）在外延层的上表面的第一区域上形成电极。

公开(公告)号：US20080277678A1

公开(公告)日：2008-11-13

申请号：US11801155

申请日：2007-05-08

申请人： Yu-Chu Li ,  Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Su-Hui Lin

发明人： Yu-Chu Li ,  Chiung-Chi Tsai ,  Tzong-Liang Tsai ,  Su-Hui Lin

IPC分类号： H01L29/22 ,  H01L21/00 ,  H01L27/15

CPC分类号： H01L33/22 ,  H01L33/38

摘要： A method for making a light emitting device includes: forming a multi-layer structure on a substrate; forming a patterned mask material on one side of the multi-layer structure such that the patterned mask material covers an etch region of the multi-layer structure; forming a roughened layer on the multi-layer structure; removing the patterned mask material from the multi-layer structure so as to expose the etch region of the multi-layer structure; forming an etch mask material on the roughened layer; dry etching the multi-layer structure at the exposed etch region so as to define an electrode-forming region on the first semiconductor layer that corresponds to the etch region of the multi-layer structure; and forming an electrode on the electrode-forming region of the first semiconductor layer.

摘要翻译： 一种制造发光器件的方法包括：在衬底上形成多层结构; 在所述多层结构的一侧上形成图案化掩模材料，使得所述图案化掩模材料覆盖所述多层结构的蚀刻区域; 在多层结构上形成粗糙层; 从所述多层结构中去除所述图案化掩模材料，以暴露所述多层结构的蚀刻区域; 在粗糙层上形成蚀刻掩模材料; 在暴露的蚀刻区域干蚀刻多层结构，以便在对应于多层结构的蚀刻区域的第一半导体层上限定电极形成区域; 以及在所述第一半导体层的电极形成区上形成电极。