公开(公告)号：US20100188771A1

公开(公告)日：2010-07-29

申请号：US12636649

申请日：2009-12-11

申请人： Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

发明人： Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

IPC分类号： G11B21/02 ,  G11B5/39

CPC分类号： H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/1936 ,  H01L43/08 ,  Y10T428/1121

摘要： A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field to be detected, wherein either the pinned layer or the free layer includes a Heusler alloy layer represented by a composition of X-Y-Z, wherein X is between about 45 at. % and about 55 at. % and is Co or Fe, Y accounts for between about 20 at. % and about 30 at. % and is one or more elements selected from V, Cr, Mn, and Fe, and Z is between about 20 at. % and about 35 at. % and is one or more elements selected from Al, Si, Ga, Ge, Sn, and Sb, the other layer including a high saturation magnetization material layer having higher saturation magnetization than that of the Heusler alloy, and where the direction of the current flowing perpendicular to plane being a direction in which an electron flows from the Heusler alloy layer into the high saturation magnetization material layer. Additional embodiments are also presented.

摘要翻译： 根据一个实施例的磁阻磁头使用具有自由层，中间层和被钉扎层的叠层的电流 - 垂直于平面的磁阻元件，被钉扎层基本上固定在待检测的磁场上， 其中所述被钉扎层或所述自由层包括由XYZ的组合物表示的Heusler合金层，其中X在约45at之间。 ％和约55在。 ％，为Co或Fe，Y约为20盎司。 ％和约30在。 ％且为选自V，Cr，Mn和Fe中的一种或多种元素，Z为约20at。 ％和约35英寸 ％，并且是选自Al，Si，Ga，Ge，Sn和Sb中的一种或多种元素，另一层包括具有比Heusler合金高饱和磁化强度的高饱和磁化材料层，并且其中电流方向 垂直于平面流动的方向是电子从Heusler合金层流入高饱和磁化材料层的方向。 还提供了另外的实施例。

公开(公告)号：US5557138A

公开(公告)日：1996-09-17

申请号：US329520

申请日：1994-10-26

申请人： Takeshi Ikeda ,  Susumu Okamura

发明人： Takeshi Ikeda ,  Susumu Okamura

IPC分类号： H01L27/08 ,  H03H7/01 ,  H01L27/04 ,  H01L27/02

CPC分类号： H03H7/0115 ,  H01L27/08 ,  H03H2001/0064 ,  H03H2001/0078

摘要： An LC element with a pn junction layer formed near the surface of a p-Si substrate by forming an n.sup.+ region having a predetermined shape and in a portion thereof additionally forming a p.sup.+ region having the same shape, and with first and second electrodes formed over entire length on the surface of this pn junction layer; wherein the two electrodes respectively function as inductors and by using the pn junction layer with reverse bias, a distributed constant type capacitor is formed between these inductors, thereby providing excellent attenuation characteristics over a wide band, a semiconductor device including the LC element, and a method of manufacturing the LC element.This LC element and semiconductor device can be easily manufactured; in the case of manufacturing as a portion of an IC or LSI device, component assembly work in subsequent processing can be abbreviated, and by changing the capacitance of the distributed constant type capacitor according to requirements, the characteristics can be changed.

摘要翻译： 具有通过形成具有预定形状的n +区形成在p-Si衬底的表面附近的pn结层的LC元件，并且在其另外形成具有相同形状的p +区的部分中，并且形成有第一和第二电极 该pn结层表面的整个长度; 其中两个电极分别用作电感器并且通过使用具有反向偏压的pn结层，在这些电感器之间形成分布常数型电容器，从而在宽带上提供优异的衰减特性，包括LC元件的半导体器件和 制造LC元件的方法。 该LC元件和半导体器件可以容易地制造; 在作为IC或LSI器件的一部分制造的情况下，可以缩短后续处理中的部件组装工作，并且通过根据要求改变分布式恒定型电容器的电容，可以改变特性。