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    Magnetoresistive Magnetic Head
    1.
    发明申请
    Magnetoresistive Magnetic Head 有权
    磁阻磁头

    公开(公告)号：US20100188771A1

    公开(公告)日：2010-07-29

    申请号：US12636649

    申请日：2009-12-11

    申请人： Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

    发明人： Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

    IPC分类号： G11B21/02 ,  G11B5/39

    CPC分类号： H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/1936 ,  H01L43/08 ,  Y10T428/1121

    摘要： A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field to be detected, wherein either the pinned layer or the free layer includes a Heusler alloy layer represented by a composition of X-Y-Z, wherein X is between about 45 at. % and about 55 at. % and is Co or Fe, Y accounts for between about 20 at. % and about 30 at. % and is one or more elements selected from V, Cr, Mn, and Fe, and Z is between about 20 at. % and about 35 at. % and is one or more elements selected from Al, Si, Ga, Ge, Sn, and Sb, the other layer including a high saturation magnetization material layer having higher saturation magnetization than that of the Heusler alloy, and where the direction of the current flowing perpendicular to plane being a direction in which an electron flows from the Heusler alloy layer into the high saturation magnetization material layer. Additional embodiments are also presented.

    摘要翻译： 根据一个实施例的磁阻磁头使用具有自由层，中间层和被钉扎层的叠层的电流 - 垂直于平面的磁阻元件，被钉扎层基本上固定在待检测的磁场上， 其中所述被钉扎层或所述自由层包括由XYZ的组合物表示的Heusler合金层，其中X在约45at之间。 ％和约55在。 ％，为Co或Fe，Y约为20盎司。 ％和约30在。 ％且为选自V，Cr，Mn和Fe中的一种或多种元素，Z为约20at。 ％和约35英寸 ％，并且是选自Al，Si，Ga，Ge，Sn和Sb中的一种或多种元素，另一层包括具有比Heusler合金高饱和磁化强度的高饱和磁化材料层，并且其中电流方向 垂直于平面流动的方向是电子从Heusler合金层流入高饱和磁化材料层的方向。 还提供了另外的实施例。

    Magnetoresistive magnetic head having a cpp element using a heusler alloy layer and a high saturation magnetization layer
    2.
    发明授权
    Magnetoresistive magnetic head having a cpp element using a heusler alloy layer and a high saturation magnetization layer 有权
    具有使用heusler合金层和高饱和磁化层的cpp元件的磁阻磁头

    公开(公告)号：US08189304B2

    公开(公告)日：2012-05-29

    申请号：US12636649

    申请日：2009-12-11

    申请人： Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

    发明人： Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

    IPC分类号： G11B5/39

    CPC分类号： H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/1936 ,  H01L43/08 ,  Y10T428/1121

    摘要： A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field to be detected, wherein either the pinned layer or the free layer includes a Heusler alloy layer represented by a composition of X—Y—Z, wherein X is between about 45 at. % and about 55 at. % and is Co or Fe, Y accounts for between about 20 at. % and about 30 at. % and is one or more elements selected from V, Cr, Mn, and Fe, and Z is between about 20 at. % and about 35 at. % and is one or more elements selected from Al, Si, Ga, Ge, Sn, and Sb, the other layer including a high saturation magnetization material layer having higher saturation magnetization than that of the Heusler alloy, and where the direction of the current flowing perpendicular to plane being a direction in which an electron flows from the Heusler alloy layer into the high saturation magnetization material layer. Additional embodiments are also presented.

    摘要翻译： 根据一个实施例的磁阻磁头使用具有自由层，中间层和被钉扎层的叠层的电流 - 垂直于平面的磁阻元件，被钉扎层基本上固定在待检测的磁场上， 其中被钉扎层或自由层包括由X-Y-Z组合物表示的Heusler合金层，其中X在约45at之间。 ％和约55在。 ％，为Co或Fe，Y约为20盎司。 ％和约30在。 ％且为选自V，Cr，Mn和Fe中的一种或多种元素，Z为约20at。 ％和约35英寸 ％，并且是选自Al，Si，Ga，Ge，Sn和Sb中的一种或多种元素，另一层包括具有比Heusler合金高饱和磁化强度的高饱和磁化材料层，并且其中电流方向 垂直于平面流动的方向是电子从Heusler合金层流入高饱和磁化材料层的方向。 还提供了另外的实施例。

    Differential magnetoresistive magnetic head
    4.
    发明申请
    Differential magnetoresistive magnetic head 有权
    差分磁阻磁头

    公开(公告)号：US20090034135A1

    公开(公告)日：2009-02-05

    申请号：US12218860

    申请日：2008-07-17

    申请人： Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  Yo Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

    发明人： Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  Yo Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

    摘要： Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.

    摘要翻译： 本发明的实施例有助于提供能够实现高分辨率和高制造稳定性的单元型差分磁阻磁头。 根据一个实施例，通过堆叠下层膜，反铁磁性膜，铁磁性钉扎层，非磁性中间层，软磁性自由层，长距离反向平行耦合层叠膜和差动层叠膜形成磁阻层叠膜 软磁自由层。 长距离反平行耦合分层膜将软磁自由层和差分软磁自由层以约3纳米至20纳米的距离反平行状态进行交换耦合。 通过使用磁阻层叠膜制造单元型差分磁阻磁头，可以实现高分辨率和高制造稳定性而不破坏GMR效应。

    Multilayered film, producing method thereof, and magnetoresistive head using them
    7.
    发明申请
    Multilayered film, producing method thereof, and magnetoresistive head using them 有权
    多层膜及其制造方法以及使用它们的磁阻头

    公开(公告)号：US20070274009A1

    公开(公告)日：2007-11-29

    申请号：US11784212

    申请日：2007-04-04

    申请人： Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Yo Sato

    发明人： Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Yo Sato

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T428/1121

    摘要： Embodiments of the present invention provides sufficiently high exchange coupling with a magnetic layer and improve the yield and reliability of a magnetoresistive head. By using a tilted growth crystalline structured antiferromagnetic film manufactured by an oblique incident deposition method, a high exchange coupling field with a ferromagnetic film can be obtained. As a result, excellent reliability and high output can be obtained in a magnetoresistive head utilizing features in accordance with embodiments of the present invention.

    摘要翻译： 本发明的实施例提供了与磁性层的充分高的交换耦合，并提高了磁阻磁头的成品率和可靠性。 通过使用通过倾斜入射沉积法制造的倾斜生长晶体结构的反铁磁膜，可以获得具有铁磁膜的高交换耦合场。 因此，利用根据本发明的实施例的特征，可以获得在磁阻头中的优异的可靠性和高输出。

    Magneto-resistive head having a stable response property without longitudinal biasing and method for manufacturing the same
    8.
    发明授权
    Magneto-resistive head having a stable response property without longitudinal biasing and method for manufacturing the same 失效
    具有稳定的响应特性而不具有纵向偏置的磁阻头及其制造方法

    公开(公告)号：US07733614B2

    公开(公告)日：2010-06-08

    申请号：US11698251

    申请日：2007-01-24

    申请人： Kenichi Meguro ,  Hiroyuki Katada ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    发明人： Kenichi Meguro ,  Hiroyuki Katada ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    IPC分类号： G11B5/127

    CPC分类号： G11B5/399 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/12

    摘要： Embodiments in accordance with the present invention provide a method of manufacturing a magneto-resistive head which can realize high sensitivity and good linear response characteristics with low noise even if a track width becomes narrower. A uniaxial anisotropy unaffected by annealing which is due to the orientation of the crystal grain growth direction, is induced in a magnetic layer. The free magnetic layer has the synthetic antiferromagnetic construction: first magnetic layer/interlayer antiferromagnetic coupling layer/second magnetic layer, the magnitude of the antiferromagnetic coupling is adjusted, and linear response characteristics are obtained even if a longitudinal biasing field applying mechanism is not provided.

    摘要翻译： 根据本发明的实施例提供一种制造磁阻头的方法，即使轨道宽度变窄，其也可以实现具有低噪声的高灵敏度和良好的线性响应特性。 在磁性层中诱发不受退火影响的单轴各向异性，这是由于晶粒生长方向的取向引起的。 自由磁性层具有合成的反铁磁结构：第一磁性层/层间反铁磁耦合层/第二磁性层，调整反铁磁耦合的大小，并且即使没有提供纵向偏置场施加机构也可获得线性响应特性。

    Differential magnetoresistive magnetic head
    9.
    发明授权
    Differential magnetoresistive magnetic head 有权
    差分磁阻磁头

    公开(公告)号：US08174799B2

    公开(公告)日：2012-05-08

    申请号：US12218860

    申请日：2008-07-17

    申请人： Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  You Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

    发明人： Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  You Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

    摘要： Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.

    摘要翻译： 本发明的实施例有助于提供能够实现高分辨率和高制造稳定性的单元型差分磁阻磁头。 根据一个实施例，通过堆叠下层膜，反铁磁性膜，铁磁性钉扎层，非磁性中间层，软磁性自由层，长距离反向平行耦合层叠膜和差动层叠膜形成磁阻层叠膜 软磁自由层。 长距离反平行耦合分层膜将软磁自由层和差分软磁自由层以约3纳米至20纳米的距离反平行状态进行交换耦合。 通过使用磁阻层叠膜制造单元型差分磁阻磁头，可以实现高分辨率和高制造稳定性而不破坏GMR效应。

    Magneto-resistive head having a stable response property without longitudinal biasing and method for manufacturing the same
    10.
    发明申请
    Magneto-resistive head having a stable response property without longitudinal biasing and method for manufacturing the same 失效
    具有稳定的响应特性而不具有纵向偏置的磁阻头及其制造方法

    公开(公告)号：US20070188934A1

    公开(公告)日：2007-08-16

    申请号：US11698251

    申请日：2007-01-24

    申请人： Kenichi Meguro ,  Hiroyuki Katada ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    发明人： Kenichi Meguro ,  Hiroyuki Katada ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    IPC分类号： G11B5/33

    CPC分类号： G11B5/399 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/12

    摘要： Embodiments in accordance with the present invention provide a method of manufacturing a magneto-resistive head which can realize high sensitivity and good linear response characteristics with low noise even if a track width becomes narrower. A uniaxial anisotropy unaffected by annealing which is due to the orientation of the crystal grain growth direction, is induced in a magnetic layer. The free magnetic layer has the synthetic antiferromagnetic construction: first magnetic layer/interlayer antiferromagnetic coupling layer/second magnetic layer, the magnitude of the antiferromagnetic coupling is adjusted, and linear response characteristics are obtained even if a longitudinal biasing field applying mechanism is not provided.

    摘要翻译： 根据本发明的实施例提供一种制造磁阻头的方法，即使轨道宽度变窄，其也可以实现具有低噪声的高灵敏度和良好的线性响应特性。 在磁性层中诱发不受退火影响的单轴各向异性，这是由于晶粒生长方向的取向引起的。 自由磁性层具有合成的反铁磁结构：第一磁性层/层间反铁磁耦合层/第二磁性层，调整反铁磁耦合的大小，并且即使没有提供纵向偏置场施加机构也可获得线性响应特性。