-
公开(公告)号：US06758912B2
公开(公告)日：2004-07-06
申请号：US10282430
申请日：2002-10-29
IPC分类号： B08B308
摘要： A method for forming for inhibiting the buildup of cerlum-containing deposits in a process tool is disclosed. The method involves spraying a solution of a dilute acid, preferably nitric or perchloric acid, through the chamber and bowl rinse nozzles of the process tool. The method is less time consuming than previous methods for inhibiting the buildup of cerium-containing deposits and can be conveniently carried out at the end of every shift.
摘要翻译： 公开了一种用于在工艺工具中抑制含铈沉积物积聚的方法。 该方法包括通过处理工具的室和碗冲洗喷嘴喷洒稀酸，优选硝酸或高氯酸的溶液。 该方法比以前用于抑制含铈沉积物积聚的方法耗时更少，并且可以在每次移动结束时方便地进行。
-
12.发明授权
公开(公告)号：US5409852A
公开(公告)日：1995-04-25
申请号：US71767
申请日：1993-07-21
IPC分类号： H01L21/20 , H01L21/31 , H01L27/00 , H01L27/06 , H01L21/265
CPC分类号： H01L27/0688
摘要： A set of three-dimensional structures and devices may be wired together to perform a wide variety of circuit functions such as SRAMs, DRAMs, ROMs and PLAs. Both N-Channel and P-Channel transistors can be made. The P-channel devices are fabricated conventionally in separate N-wells or, alteratively, they are constructed in a like manner to the array N-channel devices. N and P diffused wire can be electrically joined at polysilicon contacts.
摘要翻译： 一组三维结构和器件可以连接在一起以执行各种各样的电路功能，例如SRAM，DRAM，ROM和PLA。 可以制造N沟道和P沟道晶体管。 P沟道器件通常在单独的N阱中制造，或者替代地，它们以类似的方式构造到阵列N沟道器件。 N和P扩散线可以在多晶硅接触处电连接。
-
13.发明申请TECHNIQUES FOR REDUCING DEGRADATION AND/OR MODIFYING FEATURE SIZE OF PHOTOMASKS 有权降低光滑度和/或修饰光斑特征的技术公开(公告)号：US20100086876A1
公开(公告)日：2010-04-08
申请号：US12244903
申请日：2008-10-03
申请人： Peter H. Bartlau , Thomas B. Faure , Alfred Wagner
发明人： Peter H. Bartlau , Thomas B. Faure , Alfred Wagner
IPC分类号： G03F7/20
CPC分类号： G03F7/70916 , G03F1/32 , G03F1/54 , G03F1/68 , G03F1/72 , G03F7/70866
摘要： A photomask includes a light transmitting substrate and an absorber layer adjacent thereto. The absorber layer includes a silicide, such as molybdenum silicide, patterned into a plurality of features. The surrounding environment is controlled to prevent undesirable growth by oxidation of the absorber layer when the mask is exposed to light while being used to fabricate integrated circuits. In another aspect, the surrounding environment is controlled to encourage desirable growth by oxidation of the absorber layer when the mask is exposed to light.
摘要翻译： 光掩模包括透光基板和与其相邻的吸收体层。 吸收层包括硅化物，例如硅化钼，被图案化成多个特征。 控制周围环境以防止当掩模暴露于光时用于制造集成电路时吸收层的氧化引起不期望的生长。 另一方面，当掩模暴露于光时，控制周围环境以促进吸收层氧化所需的生长。
-
公开(公告)号：US06426177B2
公开(公告)日：2002-07-30
申请号：US09748975
申请日：2000-12-27
申请人： Thomas B. Faure , Steven D. Flanders , Lyndon S. Gibbs , James P. Levin , Harold G. Linde , Joseph L. Malenfant, Jr. , Jeffrey F. Shepard
发明人： Thomas B. Faure , Steven D. Flanders , Lyndon S. Gibbs , James P. Levin , Harold G. Linde , Joseph L. Malenfant, Jr. , Jeffrey F. Shepard
IPC分类号： G03F720
CPC分类号： G03F7/3021 , G03F7/325
摘要： A method for developing copolymer photosensitive resists wherein a single solvent is used in conjunction with a puddle develop tool. The copolymer resist is ZEP 7000 and the developer is ethyl 3-ethoxy propionate (EEP).
摘要翻译： 用于开发共聚物光敏抗蚀剂的方法，其中单一溶剂与水坑显影工具结合使用。 共聚物抗蚀剂为ZEP 7000，显色剂为3-乙氧基丙酸乙酯（EEP）。
-
公开(公告)号：US6162565A
公开(公告)日：2000-12-19
申请号：US178209
申请日：1998-10-23
摘要： A method for forming chrome photomasks and phase-shift masks without producing chrome opaque defects. The method involves rinsing the mask blank with dilute acid, preferably nitric or perchloric acid, during processing to form the photomask. When a dry etch is used to form the photomask, the mask blank is rinsed after wet development of the photoresist. When a wet etch is used to form the photomask, the mask blank is rinsed after the wet etch. This method decreases the number of defects per photomask as well as the mask-to-mask variation in the number of defects.
摘要翻译： 用于形成铬光掩模和相移掩模的方法，而不产生铬不透明缺陷。 该方法包括在加工过程中用稀酸，优选硝酸或高氯酸冲洗掩模毛坯，以形成光掩模。 当使用干蚀刻来形成光掩模时，在湿光显影光致抗蚀剂之后，将掩模毛坯漂洗。 当使用湿蚀刻来形成光掩模时，在湿蚀刻之后，将掩模毛坯冲洗掉。 该方法减少每个光掩模的缺陷数量以及缺陷数量的掩模对掩模的变化。
-
16.发明授权Techniques for reducing degradation and/or modifying feature size of photomasks 有权降低和/或修改光掩模特征尺寸的技术公开(公告)号：US08568959B2
公开(公告)日：2013-10-29
申请号：US12244903
申请日：2008-10-03
申请人： Peter H. Bartlau , Thomas B. Faure , Alfred Wagner
发明人： Peter H. Bartlau , Thomas B. Faure , Alfred Wagner
IPC分类号： G03F7/20
CPC分类号： G03F7/70916 , G03F1/32 , G03F1/54 , G03F1/68 , G03F1/72 , G03F7/70866
摘要： A photomask includes a light transmitting substrate and an absorber layer adjacent thereto. The absorber layer includes a silicide, such as molybdenum silicide, patterned into a plurality of features. The surrounding environment is controlled to prevent undesirable growth by oxidation of the absorber layer when the mask is exposed to light while being used to fabricate integrated circuits. In another aspect, the surrounding environment is controlled to encourage desirable growth by oxidation of the absorber layer when the mask is exposed to light.
摘要翻译： 光掩模包括透光基板和与其相邻的吸收体层。 吸收层包括硅化物，例如硅化钼，被图案化成多个特征。 控制周围环境以防止当掩模暴露于光时用于制造集成电路时吸收层的氧化引起不期望的生长。 另一方面，当掩模暴露于光时，控制周围环境以促进吸收层氧化所需的生长。
-
公开(公告)号：US20080113275A1
公开(公告)日：2008-05-15
申请号：US11559417
申请日：2006-11-14
IPC分类号： G03F1/00
摘要： Methods for manufacturing a photomask, such as a chrome on glass photomask and a phase shift photomask are provided. A selective main chrome etch and a selective chrome overetch in the fabrication process provides a photomask having improved image quality and provides nominal image size control and image size uniformity across the photomask within current process flows and manufacturing steps. The selective etch process utilizes a main etch where the resist etch selectivity (amount of chrome removed to resist removed) is higher than in the overetch step in which the etch is more selective to removal of the resist layer relative to the chrome layer. To control the etch selectivities the composition of the etchant chemistry and/or the etchant reactor hardware settings (power, voltage, etc.) can be adjusted.
摘要翻译： 提供了制造光掩模的方法，例如玻璃光掩模上的铬和相移光掩模。 选择性主铬蚀刻和制造工艺中的选择性铬过蚀刻提供了具有改进的图像质量的光掩模，并且在当前工艺流程和制造步骤中提供标称图像尺寸控制和光掩模上的图像尺寸均匀性。 选择性蚀刻工艺利用主蚀刻，其中抗蚀剂蚀刻选择性（去除的抗蚀剂去除量）比在蚀刻对于相对于铬层去除抗蚀剂层更有选择性的过蚀刻步骤中更高。 为了控制蚀刻选择性，可以调整蚀刻剂化学成分和/或蚀刻剂反应器硬件设置（功率，电压等）。
-
18.发明申请STRUCTURE AND METHOD FOR PARTITIONED DUMMY FILL SHAPES FOR REDUCED MASK BIAS WITH ALTERNATING PHASE SHIFT MASKS 失效用于减少掩模偏移的分离式填充形状的结构和方法，具有相移相位掩蔽公开(公告)号：US20080086714A1
公开(公告)日：2008-04-10
申请号：US11539204
申请日：2006-10-06
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F1/30 , G03F1/36 , G03F1/70 , G06F2217/12 , Y02P90/265
摘要： A method and system for partitioned dummy fill shapes for reduced mask bias with alternating phase shift masks, or with other two-mask lithographic processes employing a trim mask. The method and system comprises locating regions in a finished semiconductor design that do not contain as-designed shapes. The method and system generates dummy fill shapes in the regions at a predetermined final density and sizes the generated dummy shapes so that their local density is increased to a predetermined value. The method and system further creates corresponding trim shapes that act to expose an oversized portion of the dummy shape, effectively trimming each dummy shape back to the predetermined final density. The method and system can be implemented on a computer program product comprising a computer useable medium including a computer readable program.
摘要翻译： 用于分割的虚拟填充形状的方法和系统，用于减少具有交替相移掩模的掩模偏置，或者使用采用修剪掩模的其它双掩模光刻工艺。 该方法和系统包括在完整的半导体设计中定位不具有设计形状的区域。 该方法和系统以预定的最终密度在区域中产生虚拟填充形状，并且对生成的虚拟形状进行尺寸化，使得它们的局部密度增加到预定值。 该方法和系统进一步产生相应的修剪形状，其用于暴露虚拟形状的超大部分，有效地将每个虚拟形状修剪回到预定的最终密度。 该方法和系统可以在包括包括计算机可读程序的计算机可用介质的计算机程序产品上实现。
-
公开(公告)号：US07014959B2
公开(公告)日：2006-03-21
申请号：US10605801
申请日：2003-10-28
申请人： Shaun B. Crawford , Timothy J. Dalton , Thomas B. Faure , Cuc K. Huynh , Michelle L. Steen , Thomas M. Wagner
发明人： Shaun B. Crawford , Timothy J. Dalton , Thomas B. Faure , Cuc K. Huynh , Michelle L. Steen , Thomas M. Wagner
CPC分类号： C23F4/00 , G03F1/80 , H01L21/0332 , H01L21/32136
摘要： A photomask is formed by depositing an opaque layer on a transparent substrate. A resist is formed on the opaque layer and selectively patterned to expose the portions of the opaque layer that are to be etched out. During the dry etching step, the photomask is exposed to an etchant gas mixture which exhibits a selectivity equal to or higher than 1.2:1 between the opaque layer and the resist layer. Due to the selectivity of the gas mixture, a thinner resist film can be used, thereby increasing resolution and accuracy of the opaque layer pattern. Also, due to reduced susceptibility to both a macro-loading effect and a pattern density effect, overetching of the resist and underetching of the opaque layer are significantly reduced, thereby achieving improved etching uniformity and consequently improved CD uniformity.
摘要翻译： 通过在透明基底上沉积不透明层而形成光掩模。 抗蚀剂形成在不透明层上并选择性地图案化以暴露待被蚀刻出的不透明层的部分。 在干蚀刻步骤期间，光掩模暴露于在不透明层和抗蚀剂层之间具有等于或高于1.2:1的选择性的蚀刻剂气体混合物。 由于气体混合物的选择性，可以使用更薄的抗蚀剂膜，从而提高不透明层图案的分辨率和精度。 此外，由于对宏观负载效应和图案密度效应的敏感性降低，抗蚀剂的过蚀刻和不透明层的去抛光显着降低，从而实现了改进的蚀刻均匀性并因此改善了CD均匀性。
-
20.发明授权Recovery of an anodically bonded glass device from a susstrate by use of a metal interlayer 失效通过使用金属中间层从怀疑物回收阳极结合的玻璃器件
公开(公告)号：US5538151A
公开(公告)日：1996-07-23
申请号：US375769
申请日：1995-01-20
摘要： A structure and method for removing and recovering an anodically bonded glass device from a substrate using a metal interlayer interposed between the glass and the substrate is provided. As used in semiconductor mask fabrication, the structure comprises a silicon wafer substrate coated with a membrane on which a metal interlayer is disposed. The metal interlayer and a glass device are anodically bonded together. Recovery of the glass device is accomplished by chemically and mechanically removing the wafer and its membrane from the metal interlayer. The membrane is preferably removed using reactive ion etching to which the metal interlayer is resistant. The metal interlayer is then removed from the glass device using a highly corrosive chemical solution. The recovered glass device may then be reused.
摘要翻译： 提供了一种使用夹在玻璃和基板之间的金属夹层从基板去除和回收阳极粘合的玻璃器件的结构和方法。 如在半导体掩模制造中使用的，该结构包括涂覆有膜的硅晶片衬底，金属中间层设置在膜上。 将金属中间层和玻璃器件阳极结合在一起。 玻璃器件的回收是通过化学和机械地从金属中间层除去晶片及其膜而实现的。 优选使用金属中间层抵抗的反应离子蚀刻去除膜。 然后使用高度腐蚀性的化学溶液从玻璃装置中除去金属中间层。 然后可以重新使用回收的玻璃装置。
-
-
-
-
-
-
-
-
-
搜索结果
23 条记录 (耗时 0.016 秒)
