公开(公告)号：US20050076579A1

公开(公告)日：2005-04-14

申请号：US10683233

申请日：2003-10-10

Applicant: Junaid Siddiqui ,  Timothy Compton ,  Bin Hu ,  Robin Richards ,  Saifi Usmani

Inventor： Junaid Siddiqui ,  Timothy Compton ,  Bin Hu ,  Robin Richards ,  Saifi Usmani

IPC: B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  B24D3/02 ,  H01L21/302 ,  H01L21/461

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a tricine-type or bicine-type compound. The composition possesses high selectivities for removal of copper in relation to tantalum and dielectric materials whilst minimizing local dishing and erosion effects in CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).

公开(公告)号：US20070049025A1

公开(公告)日：2007-03-01

申请号：US11508427

申请日：2006-08-23

Applicant: Junaid Siddiqui ,  Timothy Compton

Inventor： Junaid Siddiqui ,  Timothy Compton

IPC: H01L21/44

CPC classification number: H01L21/7684 ,  C09G1/02 ,  H01L21/3212

Abstract: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a ketooxime compound and water. The composition may also contain an abrasive and/or a per compound oxidizing agent. The composition affords tunability of removal rates for metal, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

Abstract translation: 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 该组合物含有酮肟化合物和水。 组合物还可以含有磨料和/或每一种化合物氧化剂。 该组合物提供金属CMP中金属，阻挡材料和介电层材料的去除速率的可调性。 该组合物特别适用于金属CMP应用的相关方法（例如，步骤2铜CMP工艺）。