公开(公告)号：US08891328B2

公开(公告)日：2014-11-18

申请号：US13169485

申请日：2011-06-27

Applicant: Yan-Zun Li

Inventor： Yan-Zun Li

IPC: G11C7/00 ,  G11C17/16 ,  G11C17/18

CPC classification number: H01L27/0288 ,  G11C17/16 ,  G11C17/18 ,  H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An antifuse according to an embodiment of the invention herein can include a depletion mode metal oxide semiconductor field effect transistor (“MOSFET”) having a conduction channel and a metal gate overlying the conduction channel. A cathode and an anode of the antifuse can be electrically coupled to the gate and spaced apart from one another in a direction the gate extends, such that the antifuse is programmable by driving a programming current between the cathode and the anode to cause material of the metal gate to migrate away. The gate may be configured such that, under appropriate biasing conditions, when the antifuse is unprogrammed, the conduction channel is turned on unless a voltage above a first threshold voltage is applied to the gate to turn off the conduction channel. The gate can be configured such that when the antifuse has been programmed, the conduction channel remains turned on even if a voltage above the first threshold voltage is applied between the gate and a source region of the MOSFET.

Abstract translation: 根据本发明的实施例的反熔丝可以包括具有导电沟道和覆盖导电沟道的金属栅极的耗尽型金属氧化物半导体场效应晶体管（“MOSFET”）。 反熔丝的阴极和阳极可以电连接到栅极并且在栅极延伸的方向上彼此间隔开，使得反熔丝可通过驱动阴极和阳极之间的编程电流来编程，从而使材料 金属门移开。 栅极可以被配置为使得在适当的偏置条件下，当反熔丝未被编程时，导通通道被导通，除非高于第一阈值电压的电压被施加到栅极以截止导通通道。 栅极可以被配置为使得当反熔丝被编程时，即使在栅极和MOSFET的源极区域之间施加高于第一阈值电压的电压，导通通道也保持导通。

公开(公告)号：US08542517B2

公开(公告)日：2013-09-24

申请号：US13158510

申请日：2011-06-13

Applicant: Yan Zun Li

Inventor： Yan Zun Li

IPC: G11C17/00

CPC classification number: G11C17/18 ,  G11C17/16 ,  H01L27/11206 ,  H01L29/1087

Abstract: An antifuse can include an insulated gate field effect transistor (“IGFET”) having an active semiconductor region including a body and first regions, i.e., at least one source region and at least one drain region separated from one another by the body. A gate may overlie the body and a body contact is electrically connected with the body. The first regions have opposite conductivity (i.e., n-type or p-type) from the body. The IGFET can be configured such that a programming current through at least one of the first regions and the body contact causes heating sufficient to drive dopant diffusion from the at least one first region into the body and cause an edge of the at least one first region to move closer to an adjacent edge of at least one other of the first regions. In such way, the programming current can permanently reduce electrical resistance by one or more orders of magnitude between the at least one first region and the at least one other first region.

Abstract translation: 反熔丝可以包括具有包括主体的有源半导体区域和第一区域的绝缘栅极场效应晶体管（“IGFET”），即至少一个源极区域和由主体彼此分离的至少一个漏极区域。 门可以覆盖身体，并且身体接触件与身体电连接。 第一区域具有与身体相反的导电性（即，n型或p型）。 IGFET可以被配置为使得通过第一区域和身体接触中的至少一个的编程电流引起足以驱动掺杂剂从至少一个第一区域进入体内的掺杂剂扩散并引起至少一个第一区域的边缘 以更靠近第一区域中的至少另一个的相邻边缘移动。 以这种方式，编程电流可以在至少一个第一区域和至少一个其它第一区域之间永久地将电阻降低一个或多个数量级。

公开(公告)号：US20130241031A1

公开(公告)日：2013-09-19

申请号：US13419877

申请日：2012-03-14

Applicant: Yan Zun Li ,  Zhengwen Li ,  Chengwen Pei ,  Jian Yu

Inventor： Yan Zun Li ,  Zhengwen Li ,  Chengwen Pei ,  Jian Yu

IPC: H01L23/525 ,  H01L21/44

CPC classification number: H01L23/5256 ,  H01L23/53204 ,  H01L27/115 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming an electrically programmable fuse (e-fuse) structure and the e-fuse structure are disclosed. Various embodiments of forming the e-fuse structure include: forming a dummy poly gate structure to contact a surface of a silicon structure, the dummy poly gate structure extending only a part of a length of the silicon structure; and converting an unobstructed portion of the surface of the silicon structure to silicide to form a thinned strip of the silicide between two end regions.

Abstract translation: 公开了形成电可编程熔丝（e熔丝）结构和电熔体结构的方法。 形成e熔丝结构的各种实施例包括：形成虚拟多晶硅结构以接触硅结构的表面，所述虚设多晶硅结构仅延伸所述硅结构的长度的一部分; 以及将所述硅结构的表面的无障碍部分转化为硅化物以在两个端部区域之间形成所述硅化物的薄化带。

公开(公告)号：US08896088B2

公开(公告)日：2014-11-25

申请号：US13095164

申请日：2011-04-27

Applicant: Yan Zun Li ,  Zhengwen Li ,  Chengwen Pei ,  Jian Yu

Inventor： Yan Zun Li ,  Zhengwen Li ,  Chengwen Pei ,  Jian Yu

IPC: H01L23/52 ,  H01L21/82 ,  H01L21/84 ,  H01L23/525 ,  H01L27/12 ,  G11C17/16

CPC classification number: H01L23/62 ,  G11C17/16 ,  H01L21/02532 ,  H01L21/28518 ,  H01L21/76886 ,  H01L21/823814 ,  H01L21/84 ,  H01L23/5256 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electrical fuse has an anode contact on a surface of a semiconductor substrate. The electrical fuse has a cathode contact on the surface of the semiconductor substrate spaced from the anode contact. The electrical fuse has a link within the substrate electrically interconnecting the anode contact and the cathode contact. The link comprises a semiconductor layer and a silicide layer. The silicide layer extends beyond the anode contact. An opposite end of the silicide layer extends beyond the cathode contact. A silicon germanium region is embedded in the semiconductor layer under the silicide layer, between the anode contact and the cathode contact.

Abstract translation: 电熔丝在半导体衬底的表面上具有阳极接触。 电熔丝在半导体衬底的与阳极接触件间隔开的表面上具有阴极接触。 电熔丝在衬底内具有连接阳极接触件和阴极接触件的连接。 该连接件包括半导体层和硅化物层。 硅化物层延伸超过阳极接触。 硅化物层的另一端延伸超过阴极接触。 在硅化物层之下的阳极接触和阴极接触之间的半导体层中嵌入硅锗区。

公开(公告)号：US08841208B2

公开(公告)日：2014-09-23

申请号：US13552106

申请日：2012-07-18

Applicant: Junjing Bao ,  Elbert Emin Huang ,  Yan Zun Li ,  Dan Moy

Inventor： Junjing Bao ,  Elbert Emin Huang ,  Yan Zun Li ,  Dan Moy

IPC: H01L21/44 ,  H01L21/82 ,  H01L23/52

CPC classification number: H01L23/5256 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electronic fuse structure including a first Mx metal comprising a conductive cap, an Mx+1 metal located above the Mx metal, wherein the Mx+1 metal does not comprise a conductive cap, and a via, wherein the via electrically connects the Mx metal to the Mx+1 metal in a vertical orientation.

Abstract translation: 一种电子熔丝结构，包括包括导电盖的第一Mx金属，位于Mx金属上方的Mx + 1金属，其中Mx + 1金属不包括导电盖，以及通孔，其中通孔电连接Mx金属 以垂直方向连接到Mx + 1金属。

公开(公告)号：US08569755B2

公开(公告)日：2013-10-29

申请号：US13612938

申请日：2012-09-13

Applicant: Yan Zun Li ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

Inventor： Yan Zun Li ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

IPC: H01L29/04

CPC classification number: H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An antifuse has first and second semiconductor regions having one conductivity type and a third semiconductor region therebetween having an opposite conductivity type. A conductive region contacting the first region has a long dimension in a second direction transverse to the direction of a long dimension of a gate. An antifuse anode is spaced apart from the first region in the second direction and a contact is connected with the second region. Applying a programming voltage between the anode and the contact with gate bias sufficient to fully turn on field effect transistor operation of the antifuse heats the first region to drive a dopant outwardly, causing an edge of the first region to move closer to an edge of the second region and reduce electrical resistance between the first and second regions by an one or more orders of magnitude.

Abstract translation: 反熔丝具有一个导电类型的第一和第二半导体区域和它们之间具有相反导电类型的第三半导体区域。 接触第一区域的导电区域在横向于栅极的长尺寸方向的第二方向上具有长尺寸。 反熔丝阳极在第二方向上与第一区域间隔开，并且触点与第二区域连接。 在阳极和接触之间施加编程电压，栅极偏压足以完全导通反熔丝的场效应晶体管操作加热第一区域以向外驱动掺杂剂，导致第一区域的边缘更接近于 并且将第一和第二区域之间的电阻降低一个或多个数量级。

公开(公告)号：US20120327700A1

公开(公告)日：2012-12-27

申请号：US13169485

申请日：2011-06-27

Applicant: YAN-ZUN LI

Inventor： YAN-ZUN LI

IPC: G11C17/08

CPC classification number: H01L27/0288 ,  G11C17/16 ,  G11C17/18 ,  H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An antifuse according to an embodiment of the invention herein can include a depletion mode metal oxide semiconductor field effect transistor (“MOSFET”) having a conduction channel and a metal gate overlying the conduction channel. A cathode and an anode of the antifuse can be electrically coupled to the gate and spaced apart from one another in a direction the gate extends, such that the antifuse is programmable by driving a programming current between the cathode and the anode to cause material of the metal gate to migrate away. The gate may be configured such that, under appropriate biasing conditions, when the antifuse is unprogrammed, the conduction channel is turned on unless a voltage above a first threshold voltage is applied to the gate to turn off the conduction channel. The gate can be configured such that when the antifuse has been programmed, the conduction channel remains turned on even if a voltage above the first threshold voltage is applied between the gate and a source region of the MOSFET.

Abstract translation: 根据本发明的实施例的反熔丝可以包括具有导电沟道和覆盖导电沟道的金属栅极的耗尽型金属氧化物半导体场效应晶体管（MOSFET）。 反熔丝的阴极和阳极可以电连接到栅极并且在栅极延伸的方向上彼此间隔开，使得反熔丝可通过驱动阴极和阳极之间的编程电流来编程，从而使材料 金属门移开。 栅极可以被配置为使得在适当的偏置条件下，当反熔丝未被编程时，导通通道被导通，除非高于第一阈值电压的电压被施加到栅极以截止导通通道。 栅极可以被配置为使得当反熔丝被编程时，即使在栅极和MOSFET的源极区域之间施加高于第一阈值电压的电压，导通通道也保持导通。

公开(公告)号：US20120012977A1

公开(公告)日：2012-01-19

申请号：US12835764

申请日：2010-07-14

Applicant: Yan Zun Li ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

Inventor： Yan Zun Li ,  Chandrasekharan Kothandaraman ,  Dan Moy ,  Norman W. Robson ,  John M. Safran

IPC: H01L23/525 ,  H01L21/768

CPC classification number: H01L23/5252 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An antifuse is provided having a unitary monocrystalline semiconductor body including first and second semiconductor regions each having the same first conductivity type, and a third semiconductor region between the first and second semiconductor regions which has a second conductivity type opposite from the first conductivity type. An anode and a cathode can be electrically connected with the first semiconductor region. A conductive region including a metal, a conductive compound of a metal or an alloy of a metal can contact the first semiconductor region and extend between the cathode and the anode. The antifuse can further include a contact electrically connected with the second semiconductor region. In this way, the antifuse can be configured such that the application of a programming voltage between the anode and the cathode heats the first semiconductor region sufficiently to reach a temperature which drives a dopant outwardly therefrom, causing an edge of the first semiconductor region to move closer to an adjacent edge of the second semiconductor region, thus permanently reducing electrical resistance between the first and second semiconductor regions by one or more orders of magnitude.

Abstract translation: 提供一种具有单一单晶半导体本体的反熔丝，该单体半导体本体包括具有相同的第一导电类型的第一和第二半导体区域以及具有与第一导电类型相反的第二导电类型的第一和第二半导体区域之间的第三半导体区域。 阳极和阴极可以与第一半导体区域电连接。 包括金属，金属的导电化合物或金属的合金的导电区域可以接触第一半导体区域并在阴极和阳极之间延伸。 反熔丝还可以包括与第二半导体区域电连接的触点。 以这种方式，反熔丝可被配置为使得在阳极和阴极之间施加编程电压将第一半导体区域充分加热以达到从其向外驱动掺杂剂的温度，从而使第一半导体区域的边缘移动 更靠近第二半导体区域的相邻边缘，从而将第一和第二半导体区域之间的电阻永久地减小一个或多个数量级。