公开(公告)号：US08488078B2

公开(公告)日：2013-07-16

申请号：US12795309

申请日：2010-06-07

Applicant: Yong-II Kim

Inventor： Yong-II Kim

IPC: G02F1/1333

CPC classification number: H05K5/0017 ,  G02F1/133308 ,  G02F1/1336 ,  G02F2001/133317 ,  G02F2001/13332 ,  G02F2001/133325 ,  G02F2001/133328 ,  G06F1/1601 ,  G06F2200/1612 ,  Y10T29/49002

Abstract: A chassis set includes a first chassis and a second chassis. The first chassis includes a first connecting portion having at least one guide protrusion. The second chassis includes a second connecting portion having at least one guide hole that receives the guide protrusion of the first chassis to combine the first and second chassis. Therefore, a manufacturing cost is reduced and productivity is enhanced. Additionally, the chassis can be made easily.

Abstract translation: 底盘组包括第一机架和第二机架。 第一底盘包括具有至少一个引导突起的第一连接部分。 第二底盘包括具有至少一个引导孔的第二连接部分，该至少一个引导孔容纳第一底盘的引导突起以组合第一和第二底盘。 因此，制造成本降低，生产率提高。 另外，也可以容易地制造底盘。

公开(公告)号：US20120298954A1

公开(公告)日：2012-11-29

申请号：US13480184

申请日：2012-05-24

Applicant: Sang Yeon KIM ,  Jong Rak Sohn ,  Gi Bum Kim ,  Su Yeol Lee ,  Yong II Kim

Inventor： Sang Yeon KIM ,  Jong Rak Sohn ,  Gi Bum Kim ,  Su Yeol Lee ,  Yong II Kim

IPC: H01L33/06 ,  H01L33/42

CPC classification number: H01L33/42 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

Abstract: There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bonding electrodes connected to the first and second conductive semiconductor layers, respectively; a transparent electrode layer formed on the second conductive semiconductor layer; a plurality of nano structures formed on the transparent electrode layer; and a passivation layer formed to cover the plurality of nano-structures, wherein refractive indexes of the transparent electrode layer, the plurality of nano-structures, and the passivation layer may be sequentially reduced.

Abstract translation: 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括发光结构，该发光结构包括介于其间的有源层的第一和第二导电半导体层; 分别连接到第一和第二导电半导体层的第一和第二接合电极; 形成在所述第二导电半导体层上的透明电极层; 形成在所述透明电极层上的多个纳米结构体; 以及形成为覆盖多个纳米结构的钝化层，其中可以依次减少透明电极层，多个纳米结构和钝化层的折射率。

公开(公告)号：US06306216B1

公开(公告)日：2001-10-23

申请号：US09614718

申请日：2000-07-12

Applicant: Yong II Kim ,  Joong Ho Shin ,  Yeo Heung Yun

Inventor： Yong II Kim ,  Joong Ho Shin ,  Yeo Heung Yun

IPC: C23C1600

CPC classification number: C23C16/45544 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45561 ,  C23C16/4584 ,  C23C16/481 ,  C30B25/12

Abstract: The present invention provides an apparatus for deposition of thin films on a plurality of wafers through an atomic layer epitaxial process within a reaction chamber. The apparatus has a susceptor, provided within the reaction chamber to hold the wafers and has of a plurality of wafer stations. A plurality of wafer seating units are provided in the wafer stations, and seat the wafers in the wafer stations. A gas ejecting unit is provided within the reaction chamber, and ejects reaction gases onto the reaction surfaces of the wafers. A gas feeding unit feeds the reaction gases to the gas ejecting unit at predetermined time intervals so as to allow the gas ejecting unit to alternately eject the reaction gases through each of two gas outlets into the reaction chamber. A susceptor drive unit rotates the susceptor at a predetermined velocity and vertically moves the susceptor to an upper optimal reaction position close to the ceiling of the reaction chamber. A vacuum pumping unit maintains pressure of the reaction gases within the reaction chamber, and discharges the reaction gases to the outside of the chamber. A wafer heating is positioned under the susceptor within the chamber, and heats the wafers on the susceptor within the chamber, and heats the wafers on the susceptor to a predetermined temperature. A plurality of chamber heaters are regularly set within the reaction chamber in a radial direction, and heat the interior.

Abstract translation: 本发明提供一种用于通过反应室内的原子层外延工艺在多个晶片上沉积薄膜的装置。 该设备具有设置在反应室内以保持晶片并具有多个晶片台的感受体。 多个晶片座单元设置在晶圆台中，并将晶片安置在晶圆台中。 气体喷射单元设置在反应室内，并将反应气体喷射到晶片的反应表面上。 气体供给单元以预定的时间间隔将反应气体供给到气体喷射单元，以允许气体喷射单元将反应气体通过两个气体出口中的每一个交替地喷射到反应室中。 基座驱动单元以预定速度旋转基座，并将基座垂直移动到靠近反应室顶部的上最佳反应位置。 真空泵单元保持反应室内的反应气体的压力，并将反应气体排出到室的外部。 晶片加热位于室内的基座下方，并加热室内的基座上的晶片，并将基座上的晶片加热至预定温度。 在反应室内沿径向规则地设置多个室加热器，并加热内部。