公开(公告)号：US20060183320A1

公开(公告)日：2006-08-17

申请号：US11402166

申请日：2006-04-11

Applicant: Yong-Won Cha ,  Kyu-tae Na

Inventor： Yong-Won Cha ,  Kyu-tae Na

IPC: H01L21/4763

CPC classification number: H01L21/76837 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76227

Abstract: Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.

公开(公告)号：US07033908B2

公开(公告)日：2006-04-25

申请号：US10775677

申请日：2004-02-10

Applicant: Yong-Won Cha ,  Won-Jin Kim

Inventor： Yong-Won Cha ,  Won-Jin Kim

IPC: H01L21/76

CPC classification number: H01L21/76837

Abstract: Methods of forming an electronic device including a substrate and a raised pattern on the substrate are provided. For example, a first insulating layer may be formed on the raised pattern and on the substrate. More particularly, forming the first insulating layer may include forming a first portion of the first insulating layer using a first processing condition and forming a second portion of the first insulating layer using a second processing condition. After forming the first insulating layer including the first and second portions, portions of the first insulating layer may be removed to expose portions of the raised pattern while maintaining portions of the first insulating layer on the substrate. After removing portions of the first insulating layer, a second insulating layer may be formed on the exposed portions of the raised pattern and on the maintained portions of the first insulating layer.

Abstract translation: 提供了在衬底上形成包括衬底和凸起图案的电子器件的方法。 例如，可以在凸起图案和基板上形成第一绝缘层。 更具体地，形成第一绝缘层可以包括使用第一处理条件形成第一绝缘层的第一部分，并且使用第二处理条件形成第一绝缘层的第二部分。 在形成包括第一和第二部分的第一绝缘层之后，可以去除第一绝缘层的部分以暴露凸起图案的部分，同时保持基板上的第一绝缘层的部分。 在去除第一绝缘层的部分之后，可以在凸起图案的暴露部分和第一绝缘层的保持部分上形成第二绝缘层。

公开(公告)号：US07781302B2

公开(公告)日：2010-08-24

申请号：US11703316

申请日：2007-02-07

Applicant: Yong-Won Cha ,  Dae-Lok Bae

Inventor： Yong-Won Cha ,  Dae-Lok Bae

IPC: H01L21/76

CPC classification number: H01L21/76243

Abstract: Methods of fabricating a semiconductor device include forming a mask pattern on a semiconductor substrate and which exposes defined regions of the semiconductor substrate. Oxygen ions are implanted into the defined regions of the semiconductor substrate using the mask pattern as an ion implantation mask. The oxygen ion implanted regions of the semiconductor substrate are annealed at one or more temperatures in a range that is sufficiently high to form silicon oxide substantially throughout the oxygen ion implanted regions by reacting the implanted oxygen ions with silicon in the oxygen ion implanted regions, and that is sufficiently low to substantially prevent oxidation of the semiconductor substrate adjacent to the oxygen ion implanted regions.

Abstract translation: 制造半导体器件的方法包括在半导体衬底上形成掩模图案，并露出半导体衬底的限定区域。 使用掩模图案将氧离子注入到半导体衬底的限定区域中作为离子注入掩模。 半导体衬底的氧离子注入区域在足够高的范围内的一个或多个温度下退火，通过使注入的氧离子与氧离子注入区域中的硅反应，基本上遍及整个氧离子注入区域形成氧化硅，以及 其足够低以基本上防止邻近氧离子注入区域的半导体衬底的氧化。

公开(公告)号：US07470603B2

公开(公告)日：2008-12-30

申请号：US11701694

申请日：2007-02-02

Applicant: Yong-Won Cha ,  Sung-Kwan Kang ,  Pil-Kyu Kang ,  Yong-Hoon Son ,  Jong-Wook Lee

Inventor： Yong-Won Cha ,  Sung-Kwan Kang ,  Pil-Kyu Kang ,  Yong-Hoon Son ,  Jong-Wook Lee

IPC: H01L21/00

CPC classification number: H01L21/31144 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L29/66651

Abstract: Methods of fabricating a semiconductor device are provided. A semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A thin layer is formed on the semiconductor substrate. The thin layer is patterned to form a plurality of spaced apart field structures and to expose therebetween portions of the semiconductor substrate having the single crystalline structure. A non-crystalline layer is formed on the exposed portions of the semiconductor substrate having the single crystalline structure. The non-crystalline layer is planarized to expose upper surfaces of the field structures and define non-crystalline active structures from the non-crystalline layer between the field structures. A laser beam is generated that heats the non-crystalline active structures to change them into single crystalline active structures having substantially the same single crystalline structure as the defined region of the semiconductor substrate.

公开(公告)号：US07056827B2

公开(公告)日：2006-06-06

申请号：US10917659

申请日：2004-08-13

Applicant: Yong-Won Cha ,  Kyu-tae Na

Inventor： Yong-Won Cha ,  Kyu-tae Na

IPC: H01L21/4763

CPC classification number: H01L21/76837 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76227

Abstract: Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.

Abstract translation: 提供了在集成电路基板上填充由电路元件限定的沟槽/间隙的方法。 所述方法包括使用第一反应气体在其上包括至少一个沟槽的集成电路衬底上形成第一高密度等离子体层。 使用包括氮化氢气体（NF 3 N 3）的蚀刻气体蚀刻第一高密度等离子体层。 使用包括氮化氟的第二反应气体，在蚀刻的第一高密度等离子体层上形成第二高密度等离子体层。

公开(公告)号：US06647957B1

公开(公告)日：2003-11-18

申请号：US10019115

申请日：2002-05-01

Applicant: Yong Won Cha

Inventor： Yong Won Cha

IPC: F02D3100

CPC classification number: F02D33/006 ,  F02M37/0023 ,  F02M37/0047

Abstract: Described herein is a fuel feeding apparatus for an automobile including a fuel tank, an engine supplied with a fuel from the fuel tank by a fuel pump through a fuel feeding pipe, and a fuel return pipe for returning overflow fuel to the fuel tank. The apparatus comprises a fuel control valve, located at the proper position in an engine, for controlling the amount of fuel; fuel inlet and outlet pipes provided in the fuel control valve; a main fuel feeding line for feeding the fuel to the engine through the fuel inlet and outlet pipes; an auxiliary fuel feeding line connected parallel to the main fuel feeding line; a solenoid valve for controlling the supply of the fuel of the main fuel feeding line according to a detected signal of a brake switch provided on the brake pedal; and an auxiliary fuel control valve having a fuel control screw for controlling the fuel; the auxiliary fuel feeding line including a check valve for opening/closing a bypass pipe according to the pressure of the auxiliary fuel feeding line, the bypass pipe returning the residual fuel to the fuel tank; the main fuel feeding line including on its lower end a pressure sensitive switch operated according to a predetermined pressure when the pressure in the line is fluctuates due to an exterior affect on the engine.

Abstract translation: 这里描述了一种用于汽车的燃料供给装置，其包括燃料箱，通过燃料供给管由燃料泵从燃料箱供给燃料的发动机以及用于将溢出燃料返回到燃料箱的燃料返回管。 该装置包括燃料控制阀，其位于发动机的适当位置，用于控制燃料量; 设置在燃料控制阀中的燃料入口和出口管; 用于通过燃料入口和出口管将燃料供给到发动机的主燃料供给管线; 辅助燃料供给管线，与主燃料供给管线平行地连接; 电磁阀，用于根据设置在制动踏板上的制动开关的检测信号来控制主燃料供给管路的燃料供给; 以及辅助燃料控制阀，其具有用于控制燃料的燃料控制螺杆; 辅助燃料供给管线包括根据辅助燃料供给管线的压力打开/关闭旁通管的止回阀，旁通管将剩余燃料返回到燃料箱; 主燃料供给管线在其下端包括当由于对发动机的外部影响而在管线中的压力波动时根据预定压力操作的压力敏感开关。

公开(公告)号：US07605022B2

公开(公告)日：2009-10-20

申请号：US11621513

申请日：2007-01-09

Applicant: Yong-Won Cha ,  Dong-Chul Suh ,  Dae-Lok Bae

Inventor： Yong-Won Cha ,  Dong-Chul Suh ,  Dae-Lok Bae

IPC: H01L23/34

CPC classification number: H01L23/34 ,  H01L21/76254 ,  H01L21/84

Abstract: A method of fabricating a three-dimensional semiconductor device is provided along with a three-dimensional semiconductor device fabricated thereby. The method includes forming a heat conductive plug to channel heat away from devices on a substrate, while high temperature processes are performed on a stacked semiconductor layer. The ability to use high temperature processes on the stacked semiconductor layer without adversely effecting devices on the substrate allows the formation of a high quality single-crystalline stacked semiconductor layer. The high quality single-crystalline semiconductor layer can then be used to fabricate improved thin film transistors.

Abstract translation: 提供一种制造三维半导体器件的方法以及由此制造的三维半导体器件。 该方法包括形成导热塞以将热量从衬底上的器件引导出来，同时在堆叠的半导体层上进行高温处理。 在堆叠的半导体层上使用高温工艺而不会不利地影响衬底上的器件的能力允许形成高质量的单晶层叠半导体层。 然后可以使用高质量的单晶半导体层来制造改进的薄膜晶体管。

公开(公告)号：US07332409B2

公开(公告)日：2008-02-19

申请号：US11149307

申请日：2005-06-09

Applicant: Yong-Won Cha ,  Kyu-Tae Na ,  Yong-Soon Choi ,  Eunkee Hong ,  Ju-Seon Goo

Inventor： Yong-Won Cha ,  Kyu-Tae Na ,  Yong-Soon Choi ,  Eunkee Hong ,  Ju-Seon Goo

IPC: H01L21/76

CPC classification number: H01L21/76224

Abstract: A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.

Abstract translation: 形成沟槽隔离层的方法可以包括使用具有包含氢的载气的高密度等离子体化学气相沉积（HDPCVD）在沟槽中形成隔离层。 公开了其他方法。

公开(公告)号：US20070269957A1

公开(公告)日：2007-11-22

申请号：US11703316

申请日：2007-02-07

Applicant: Yong-Won Cha ,  Dae-Lok Bae

Inventor： Yong-Won Cha ,  Dae-Lok Bae

IPC: H01L21/76

CPC classification number: H01L21/76243

Abstract: Methods of fabricating a semiconductor device include forming a mask pattern on a semiconductor substrate and which exposes defined regions of the semiconductor substrate. Oxygen ions are implanted into the defined regions of the semiconductor substrate using the mask pattern as an ion implantation mask. The oxygen ion implanted regions of the semiconductor substrate are annealed at one or more temperatures in a range that is sufficiently high to form silicon oxide substantially throughout the oxygen ion implanted regions by reacting the implanted oxygen ions with silicon in the oxygen ion implanted regions, and that is sufficiently low to substantially prevent oxidation of the semiconductor substrate adjacent to the oxygen ion implanted regions.

Abstract translation: 制造半导体器件的方法包括在半导体衬底上形成掩模图案，并露出半导体衬底的限定区域。 使用掩模图案将氧离子注入到半导体衬底的限定区域中作为离子注入掩模。 半导体衬底的氧离子注入区域在足够高的范围内的一个或多个温度下退火，通过使注入的氧离子与氧离子注入区域中的硅反应，基本上遍及氧离子注入区域形成氧化硅，以及 其足够低以基本上防止邻近氧离子注入区域的半导体衬底的氧化。

公开(公告)号：US20060102940A1

公开(公告)日：2006-05-18

申请号：US11280704

申请日：2005-11-15

Applicant: Yong-Won Cha ,  Eun-Kyung Baek ,  Kyu-Tae Na

Inventor： Yong-Won Cha ,  Eun-Kyung Baek ,  Kyu-Tae Na

IPC: H01L31/062 ,  H01L21/00

CPC classification number: H01L27/1462 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14643

Abstract: The present invention is directed to a semiconductor device having a photodetector and a method of fabricating the same. The photodetector includes a visible ray absorbing pattern disposed on a top and/or bottom surface of an interconnection formed at a light shielding area between adjacent photodetectors, which prevents obliquely incident light from reaching an adjacent photodetector.

Abstract translation: 本发明涉及一种具有光检测器的半导体器件及其制造方法。 光检测器包括设置在形成在相邻光电检测器之间的遮光区域处的互连件的顶表面和/或底表面上的可见光线吸收图案，其防止倾斜入射光到达相邻的光电检测器。