公开(公告)号：US07056827B2

公开(公告)日：2006-06-06

申请号：US10917659

申请日：2004-08-13

Applicant: Yong-Won Cha ,  Kyu-tae Na

Inventor： Yong-Won Cha ,  Kyu-tae Na

IPC: H01L21/4763

CPC classification number: H01L21/76837 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76227

Abstract: Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.

Abstract translation: 提供了在集成电路基板上填充由电路元件限定的沟槽/间隙的方法。 所述方法包括使用第一反应气体在其上包括至少一个沟槽的集成电路衬底上形成第一高密度等离子体层。 使用包括氮化氢气体（NF 3 N 3）的蚀刻气体蚀刻第一高密度等离子体层。 使用包括氮化氟的第二反应气体，在蚀刻的第一高密度等离子体层上形成第二高密度等离子体层。

公开(公告)号：US07598177B2

公开(公告)日：2009-10-06

申请号：US11402166

申请日：2006-04-11

Applicant: Yong-Won Cha ,  Kyu-tae Na

Inventor： Yong-Won Cha ,  Kyu-tae Na

IPC: H01L21/302

CPC classification number: H01L21/76837 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76227

Abstract: Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.

Abstract translation: 提供了在集成电路基板上填充由电路元件限定的沟槽/间隙的方法。 所述方法包括使用第一反应气体在其上包括至少一个沟槽的集成电路衬底上形成第一高密度等离子体层。 使用包括氮化氢气体（NF 3）的蚀刻气体蚀刻第一高密度等离子体层。 使用包括氮化氟的第二反应气体，在蚀刻的第一高密度等离子体层上形成第二高密度等离子体层。

公开(公告)号：US20060183320A1

公开(公告)日：2006-08-17

申请号：US11402166

申请日：2006-04-11

Applicant: Yong-Won Cha ,  Kyu-tae Na

Inventor： Yong-Won Cha ,  Kyu-tae Na

IPC: H01L21/4763

CPC classification number: H01L21/76837 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76227

Abstract: Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.

公开(公告)号：US07358190B2

公开(公告)日：2008-04-15

申请号：US10732931

申请日：2003-12-11

Applicant: Hong-gun Kim ,  Kyu-tae Na ,  Eun-Kee Hong ,  Ju-Seon Goo

Inventor： Hong-gun Kim ,  Kyu-tae Na ,  Eun-Kee Hong ,  Ju-Seon Goo

IPC: H01L21/311

CPC classification number: H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/31612 ,  H01L21/76224 ,  H01L21/76229

Abstract: Methods of forming material in a gap in a substrate include forming a pattern to define a gap on a substrate. A bottom oxide layer is formed on a surface of the substrate and substantially filling the gap. The bottom oxide layer is etched back inside an opening in the gap to expose side walls of the gap so that a residual bottom oxide layer remains at a bottom of the gap. A top oxide layer is selectively deposited on the residual bottom oxide layer, wherein the top oxide layer is deposited in a first direction toward the opening at a faster rate than in a second direction away from the side walls.

Abstract translation: 在衬底中的间隙中形成材料的方法包括形成图案以在衬底上限定间隙。 底部氧化物层形成在衬底的表面上并且基本上填充间隙。 底部氧化物层在间隙中的开口内被回蚀，以暴露间隙的侧壁，使得剩余的底部氧化物层保留在间隙的底部。 顶部氧化物层被选择性地沉积在残余的底部氧化物层上，其中顶部氧化物层以比在远离侧壁的第二方向更快的速率沿第一方向朝向开口沉积。

公开(公告)号：US20070117412A1

公开(公告)日：2007-05-24

申请号：US11656469

申请日：2007-01-23

Applicant: Ju-seon Goo ,  Eun-kee Hong ,  Hong-Gun Kim ,  Kyu-tae Na

Inventor： Ju-seon Goo ,  Eun-kee Hong ,  Hong-Gun Kim ,  Kyu-tae Na

IPC: H01L21/31

CPC classification number: H01L21/02222 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/02343 ,  H01L21/3125 ,  H01L21/3165 ,  H01L21/76229 ,  H01L21/76826 ,  H01L21/76828

Abstract: A method is provided for forming silicon oxide layers during the processing of semiconductor devices by applying a SOG layer including polysilazane to a substrate and then substantially converting the SOG layer to a silicon oxide layer using an oxidant solution. The oxidant solution may include one or more oxidants including, for example, ozone, peroxides, permanganates, hypochlorites, chlorites, chlorates, perchlorates, hypobromites, bromites, bromates, hypoiodites, iodites, iodates and strong acids.

Abstract translation: 提供了一种通过将包含聚硅氮烷的SOG层施加到衬底然后使用氧化剂溶液将SOG层基本上转化为氧化硅层来在半导体器件加工期间形成氧化硅层的方法。 氧化剂溶液可以包括一种或多种氧化剂，包括例如臭氧，过氧化物，高锰酸盐，次氯酸盐，亚氯酸盐，氯酸盐，高氯酸盐，次溴酸盐，溴酸盐，溴酸盐，次碘酸盐，碘酸盐，碘酸盐和强酸。