公开(公告)号：US20110287611A1

公开(公告)日：2011-11-24

申请号：US13030850

申请日：2011-02-18

申请人： Yu-Hung Cheng ,  Chii-Horng Li ,  Tze-Liang Lee ,  Yi-Hung Lin

发明人： Yu-Hung Cheng ,  Chii-Horng Li ,  Tze-Liang Lee ,  Yi-Hung Lin

IPC分类号： H01L21/20

CPC分类号： H01L29/66636 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02639 ,  H01L29/0847 ,  H01L29/7848

摘要： A method for forming a semiconductor structure includes forming a gate stack over a semiconductor substrate in a wafer; forming a recess in the semiconductor substrate and adjacent the gate stack; and performing a selective epitaxial growth to grow a semiconductor material in the recess to form an epitaxy region. The step of performing the selective epitaxial growth includes performing a first growth stage with a first growth-to-etching (E/G) ratio of process gases used in the first growth stage; and performing a second growth stage with a second E/G ratio of process gases used in the second growth stage different from the first E/G ratio.

摘要翻译： 一种用于形成半导体结构的方法包括在晶片上的半导体衬底上形成栅叠层; 在所述半导体衬底中形成凹槽并邻近所述栅叠层; 以及进行选择性外延生长以在所述凹部中生长半导体材料以形成外延区域。 执行选择性外延生长的步骤包括以第一生长阶段中使用的工艺气体的第一生长蚀刻（E / G）比率进行第一生长阶段; 以及在与第一E / G比不同的第二生长阶段中使用的处理气体的第二E / G比进行第二生长阶段。

公开(公告)号：US09064688B2

公开(公告)日：2015-06-23

申请号：US13427628

申请日：2012-03-22

申请人： Yu-Hung Cheng ,  Wu-Ping Huang ,  Chii-Horng Li ,  Tze-Liang Lee

发明人： Yu-Hung Cheng ,  Wu-Ping Huang ,  Chii-Horng Li ,  Tze-Liang Lee

IPC分类号： H01L21/336 ,  H01L21/76 ,  H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/165

CPC分类号： H01L21/02057 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848

摘要： A method includes etching a semiconductor substrate to form a recess, wherein the recess extends from a top surface of the semiconductor substrate into the semiconductor substrate. An enhanced cleaning is then performed to etch exposed portions of the semiconductor substrate. The exposed portions are in the recess. The enhanced cleaning is performed using process gases including hydrochloride (HCl) and germane (GeH4). After the enhanced cleaning, an epitaxy is performed to grow a semiconductor region in the recess.

摘要翻译： 一种方法包括蚀刻半导体衬底以形成凹部，其中凹部从半导体衬底的顶表面延伸到半导体衬底中。 然后进行增强的清洁以蚀刻半导体衬底的暴露部分。 露出的部分在凹槽中。 使用包括盐酸盐（HCl）和锗烷（GeH4）在内的工艺气体进行增强清洗。 在增强清洁之后，进行外延以在凹槽中生长半导体区域。

公开(公告)号：US20130084682A1

公开(公告)日：2013-04-04

申请号：US13248319

申请日：2011-09-29

申请人： Yen-Ru LEE ,  Ming-Hua YU ,  Tze-Liang LEE ,  Chii-Horng LI ,  Pang-Yen TSAI ,  Lilly SU ,  Yi-Hung LIN ,  Yu-Hung CHENG

发明人： Yen-Ru LEE ,  Ming-Hua YU ,  Tze-Liang LEE ,  Chii-Horng LI ,  Pang-Yen TSAI ,  Lilly SU ,  Yi-Hung LIN ,  Yu-Hung CHENG

IPC分类号： H01L21/336

CPC分类号： H01L29/7848 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7845 ,  H01L29/7846

摘要： A method for fabricating a semiconductor device is disclosed. A strained material is formed in a cavity of a substrate and adjacent to an isolation structure in the substrate. The strained material has a corner above the surface of the substrate. The disclosed method provides an improved method for forming the strained material adjacent to the isolation structure with an increased portion in the cavity of a substrate to enhance carrier mobility and upgrade the device performance. In an embodiment, the improved formation method is achieved using an etching process to redistribute the strained material by removing at least a portion of the corner to be located in the cavity.

摘要翻译： 公开了一种制造半导体器件的方法。 应变材料形成在衬底的空腔中并与衬底中的隔离结构相邻。 应变材料在基底表面上方有一角。 所公开的方法提供了一种用于形成邻近隔离结构的应变材料的改进方法，其中衬底的腔中具有增加的部分，以增强载体移动性并提高器件性能。 在一个实施例中，改进的形成方法是通过使用蚀刻工艺来实现的，该蚀刻工艺通过去除位于空腔中的角部的至少一部分来重新分布应变材料。

公开(公告)号：US20110263092A1

公开(公告)日：2011-10-27

申请号：US12765331

申请日：2010-04-22

申请人： Yu-Hung CHENG ,  Jhi-Cherng LU ,  Ming-Hua YU ,  Chii-Horng LI ,  Tze-Liang LEE

发明人： Yu-Hung CHENG ,  Jhi-Cherng LU ,  Ming-Hua YU ,  Chii-Horng LI ,  Tze-Liang LEE

IPC分类号： H01L21/336 ,  H01L21/302

CPC分类号： H01L21/20 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66477 ,  H01L29/7848

摘要： The present disclosure discloses an exemplary method for fabricating a semiconductor device comprises selectively growing a material on a top surface of a substrate; selectively growing a protection layer on the material; and removing a portion of the protection layer in an etching gas.

摘要翻译： 本公开公开了一种用于制造半导体器件的示例性方法，包括在衬底的顶表面上选择性地生长材料; 在材料上选择性地生长保护层; 以及在蚀刻气体中去除所述保护层的一部分。

公开(公告)号：US20070050525A1

公开(公告)日：2007-03-01

申请号：US11162003

申请日：2005-08-25

申请人： Yi-Ming Pao ,  Yu-Hung Cheng

发明人： Yi-Ming Pao ,  Yu-Hung Cheng

IPC分类号： G06F13/38

CPC分类号： G06F13/385

摘要： A virtual COM port for remote I/O controller comprises a virtual COM port in a host end. The virtual COM port is connected to a remote I/O controller via a network, wherein the virtual COM port is adopted for receiving and converting commands or data of a COM port interface transmitted from the host end into an acceptable format for the remote I/O controller, and then transmitting to the remote I/O controller for processing. The virtual COM port is also adopted for receiving and converting commands or data transmitted from the remote I/O controller via the network into an acceptable format for the COM port interface, and then transmitting to the host end for processing.

摘要翻译： 用于远程I / O控制器的虚拟COM端口包括主机端的虚拟COM端口。 虚拟COM端口通过网络连接到远程I / O控制器，其中采用虚拟COM端口，用于接收和转换从主机端发送的COM端口接口的命令或数据为远程I / O控制器，然后发送到远程I / O控制器进行处理。 虚拟COM端口也被用于接收和转换从远程I / O控制器经由网络发送的命令或数据到COM端口接口的可接受格式，然后发送到主机端进行处理。

公开(公告)号：US09263339B2

公开(公告)日：2016-02-16

申请号：US12784344

申请日：2010-05-20

申请人： Yu-Hung Cheng ,  Chii-Horng Li ,  Tze-Liang Lee

发明人： Yu-Hung Cheng ,  Chii-Horng Li ,  Tze-Liang Lee

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/3065 ,  H01L27/11 ,  H01L29/78 ,  H01L21/02

CPC分类号： H01L29/66636 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L27/1116 ,  H01L29/7848

摘要： A method for forming a semiconductor structure includes forming a gate stack over a semiconductor substrate; forming a recess in the semiconductor substrate and adjacent the gate stack; and performing a selective epitaxial growth to grow a semiconductor material in the recess to form an epitaxy region. After the step of performing the selective epitaxial growth, a selective etch-back is performed to the epitaxy region. The selective etch-back is performed using process gases comprising a first gas for growing the semiconductor material, and a second gas for etching the epitaxy region.

摘要翻译： 一种用于形成半导体结构的方法包括在半导体衬底上形成栅叠层; 在所述半导体衬底中形成凹槽并邻近所述栅叠层; 以及进行选择性外延生长以在所述凹部中生长半导体材料以形成外延区域。 在执行选择性外延生长的步骤之后，对外延区进行选择性回蚀。 使用包括用于生长半导体材料的第一气体的处理气体和用于蚀刻外延区域的第二气体来执行选择性回蚀。

公开(公告)号：US20130252392A1

公开(公告)日：2013-09-26

申请号：US13427628

申请日：2012-03-22

申请人： Yu-Hung Cheng ,  Wu-Ping Huang ,  Chii-Horng Li ,  Tze-Liang Lee

发明人： Yu-Hung Cheng ,  Wu-Ping Huang ,  Chii-Horng Li ,  Tze-Liang Lee

IPC分类号： H01L21/336

CPC分类号： H01L21/02057 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02661 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848

摘要： A method includes etching a semiconductor substrate to form a recess, wherein the recess extends from a top surface of the semiconductor substrate into the semiconductor substrate. An enhanced cleaning is then performed to etch exposed portions of the semiconductor substrate. The exposed portions are in the recess. The enhanced cleaning is performed using process gases including hydrochloride (HCl) and germane (GeH4). After the enhanced cleaning, an epitaxy is performed to grow a semiconductor region in the recess.

摘要翻译： 一种方法包括蚀刻半导体衬底以形成凹部，其中凹部从半导体衬底的顶表面延伸到半导体衬底中。 然后进行增强的清洁以蚀刻半导体衬底的暴露部分。 露出的部分在凹槽中。 使用包括盐酸盐（HCl）和锗烷（GeH4）在内的工艺气体进行增强清洗。 在增强清洁之后，进行外延以在凹槽中生长半导体区域。

公开(公告)号：US20130122675A1

公开(公告)日：2013-05-16

申请号：US13736453

申请日：2013-01-08

申请人： Yu-Hung CHENG ,  Jhi-Cherng LU ,  Ming-Hua YU ,  Chii-Horng LI ,  Tze-Liang LEE

发明人： Yu-Hung CHENG ,  Jhi-Cherng LU ,  Ming-Hua YU ,  Chii-Horng LI ,  Tze-Liang LEE

IPC分类号： H01L21/20 ,  H01L29/66

CPC分类号： H01L21/20 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66477 ,  H01L29/7848

摘要： A method for fabricating a semiconductor device, the method including growing a first semiconductor structure comprising a first semiconductor material on a surface of a substrate, wherein growing the first semiconductor structure includes forming a semiconductor particle comprising the first semiconductor material on a second semiconductor structure of the semiconductor device. The method further includes forming a protection layer of a second semiconductor material on the first semiconductor structure, wherein forming the protection layer includes forming the protection layer on the semiconductor particle. The method further includes removing a portion of the protection layer, wherein removing the portion of the protection layer includes fully removing the protection layer on the semiconductor particle and the semiconductor particle.

摘要翻译： 一种制造半导体器件的方法，所述方法包括在衬底的表面上生长包括第一半导体材料的第一半导体结构，其中生长第一半导体结构包括在第二半导体结构的第二半导体结构上形成包含第一半导体材料的半导体粒子 半导体器件。 该方法还包括在第一半导体结构上形成第二半导体材料的保护层，其中形成保护层包括在半导体颗粒上形成保护层。 该方法还包括去除保护层的一部分，其中去除保护层的部分包括完全去除半导体颗粒和半导体颗粒上的保护层。

公开(公告)号：US20120032531A1

公开(公告)日：2012-02-09

申请号：US12849910

申请日：2010-08-04

申请人： Yu-Hung CHENG

发明人： Yu-Hung CHENG

IPC分类号： H02J7/00

CPC分类号： H02J7/0011 ,  H04R1/028 ,  H04R2205/021

摘要： A power bank apparatus with speaker combines the function of power bank and the function of speaker. The power bank apparatus not only charges the portable electronic apparatuses but also supplies power to the internal speaker. The voice or music of the portable electronic apparatus is amplified by the speaker of the power bank apparatus to improve the quality of the voice or music.

摘要翻译： 带扬声器的电源设备结合了电源的功能和扬声器的功能。 动力储存装置不仅对便携式电子装置进行充电，而且向内部扬声器供电。 便携式电子设备的语音或音乐由电力银行设备的扬声器放大，以提高语音或音乐的质量。

公开(公告)号：US20110287600A1

公开(公告)日：2011-11-24

申请号：US12784344

申请日：2010-05-20

申请人： Yu-Hung Cheng ,  Chii-Horng Li ,  Tze-Liang Lee

发明人： Yu-Hung Cheng ,  Chii-Horng Li ,  Tze-Liang Lee

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/66636 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L27/1116 ,  H01L29/7848

摘要： A method for forming a semiconductor structure includes forming a gate stack over a semiconductor substrate; forming a recess in the semiconductor substrate and adjacent the gate stack; and performing a selective epitaxial growth to grow a semiconductor material in the recess to form an epitaxy region. After the step of performing the selective epitaxial growth, a selective etch-back is performed to the epitaxy region. The selective etch-back is performed using process gases comprising a first gas for growing the semiconductor material, and a second gas for etching the epitaxy region.

摘要翻译： 一种用于形成半导体结构的方法包括在半导体衬底上形成栅叠层; 在所述半导体衬底中形成凹槽并邻近所述栅叠层; 以及进行选择性外延生长以在所述凹部中生长半导体材料以形成外延区域。 在执行选择性外延生长的步骤之后，对外延区进行选择性回蚀。 使用包括用于生长半导体材料的第一气体的处理气体和用于蚀刻外延区域的第二气体来执行选择性回蚀。