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    SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20120168821A1

    公开(公告)日：2012-07-05

    申请号：US12984877

    申请日：2011-01-05

    申请人： Yu-Hung CHENG ,  Chii-Horng LI ,  Tze-Liang LEE

    发明人： Yu-Hung CHENG ,  Chii-Horng LI ,  Tze-Liang LEE

    IPC分类号： H01L29/38 ,  H01L21/336

    CPC分类号： H01L29/66636 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823481 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/78 ,  H01L29/7848

    摘要： A semiconductor device having a substrate including a major surface, a gate stack comprising a sidewall over the substrate and a spacer over the substrate adjoining the sidewall of the gate stack. The spacer having a bottom surface having an outer point that is the point on the bottom surface farthest from the gate stack. An isolation structure in the substrate on one side of the gate stack has an outer edge closest to the spacer. A strained material below the major surface of the substrate disposed between the spacer and the isolation structure having an upper portion and a lower portion separated by a transition plane at an acute angle to the major surface of the substrate.

    摘要翻译： 一种具有包括主表面的衬底的半导体器件，包括在衬底上的侧壁的栅极堆叠以及与栅极堆叠的侧壁相邻的衬底上的间隔物。 该间隔件具有底表面，该外表面是位于最远离该栅极叠层的底表面上的点。 在栅极堆叠的一侧上的衬底中的隔离结构具有最靠近间隔物的外边缘。 位于衬垫的主表面之下的应变材料设置在间隔件和隔离结构之间，该上表面和隔离结构具有与衬底的主表面成锐角的过渡面分开的上部和下部。

    METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20130122675A1

    公开(公告)日：2013-05-16

    申请号：US13736453

    申请日：2013-01-08

    申请人： Yu-Hung CHENG ,  Jhi-Cherng LU ,  Ming-Hua YU ,  Chii-Horng LI ,  Tze-Liang LEE

    发明人： Yu-Hung CHENG ,  Jhi-Cherng LU ,  Ming-Hua YU ,  Chii-Horng LI ,  Tze-Liang LEE

    IPC分类号： H01L21/20 ,  H01L29/66

    CPC分类号： H01L21/20 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/3065 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66477 ,  H01L29/7848

    摘要： A method for fabricating a semiconductor device, the method including growing a first semiconductor structure comprising a first semiconductor material on a surface of a substrate, wherein growing the first semiconductor structure includes forming a semiconductor particle comprising the first semiconductor material on a second semiconductor structure of the semiconductor device. The method further includes forming a protection layer of a second semiconductor material on the first semiconductor structure, wherein forming the protection layer includes forming the protection layer on the semiconductor particle. The method further includes removing a portion of the protection layer, wherein removing the portion of the protection layer includes fully removing the protection layer on the semiconductor particle and the semiconductor particle.

    摘要翻译： 一种制造半导体器件的方法，所述方法包括在衬底的表面上生长包括第一半导体材料的第一半导体结构，其中生长第一半导体结构包括在第二半导体结构的第二半导体结构上形成包含第一半导体材料的半导体粒子 半导体器件。 该方法还包括在第一半导体结构上形成第二半导体材料的保护层，其中形成保护层包括在半导体颗粒上形成保护层。 该方法还包括去除保护层的一部分，其中去除保护层的部分包括完全去除半导体颗粒和半导体颗粒上的保护层。

    METHOD OF TEMPERATURE DETERMINATION FOR DEPOSITION REACTORS
    6.
    发明申请
    METHOD OF TEMPERATURE DETERMINATION FOR DEPOSITION REACTORS 有权
    沉积反应器温度测定方法

    公开(公告)号：US20120012047A1

    公开(公告)日：2012-01-19

    申请号：US12835789

    申请日：2010-07-14

    申请人： Jhi-Cherng LU ,  Jr-Hung LI ,  Chii-Horng LI ,  Pang-Yen TSAI ,  Bing-Hung CHEN ,  Tze-Liang LEE

    发明人： Jhi-Cherng LU ,  Jr-Hung LI ,  Chii-Horng LI ,  Pang-Yen TSAI ,  Bing-Hung CHEN ,  Tze-Liang LEE

    IPC分类号： C30B25/10

    CPC分类号： C30B25/16 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L22/10 ,  H01L22/12 ,  Y10T117/1004 ,  Y10T117/1008

    摘要： A method of determining a temperature in a deposition reactor includes the steps of depositing a first epitaxial layer of silicon germanium on a substrate, depositing a second epitaxial layer of silicon above the first epitaxial layer, measuring the thickness of the second epitaxial layer and determining the temperature in the deposition reactor using the measured thickness of the second epitaxial layer. The method may also include heating the deposition reactor to approximately a predetermined temperature using a heating device and a temperature measuring device and generating a signal indicative of a temperature within the deposition reactor. The method may also contain the steps of comparing the measured thickness with a predetermined thickness of the second epitaxial layer corresponding to the predetermined temperature and determining the temperature in the deposition reactor using the measured thickness of the second epitaxial layer and the predetermined thickness of the second epitaxial layer.

    摘要翻译： 确定沉积反应器中的温度的方法包括以下步骤：将硅锗的第一外延层沉积在衬底上，在第一外延层上沉积硅的第二外延层，测量第二外延层的厚度并确定 使用测量的第二外延层的厚度在沉积反应器中的温度。 该方法还可以包括使用加热装置和温度测量装置将沉积反应器加热至约预定温度，并产生指示沉积反应器内的温度的信号。 该方法还可以包括以下步骤：将测量的厚度与对应于预定温度的第二外延层的预定厚度进行比较，并使用第二外延层的测量厚度和第二外延层的预定厚度来确定沉积反应器中的温度 外延层。