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公开(公告)号：US20220236636A1
公开(公告)日：2022-07-28
申请号：US17658763
申请日：2022-04-11
Applicant: AGC INC.
Inventor： Hiroyoshi TANABE , Hiroshi HANEKAWA , Toshiyuki UNO
Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10%. A film thickness d of the absorbent layer satisfies a relationship of: d M A X - ( i × 6 + 1 ) nm ≤ d ≤ d M A X - ( i × 6 - 1 ) nm where the integer i is 0 or 1, and dMAX is represented by: d M A X ( nm ) = 1 3 . 5 3 2 n cos 6 ° { INT ( 0 . 5 8 1 - n ) + 1 2 π ( tan - 1 ( - k 1 - n ) + 0 . 6 4 ) } where n is a refractive index of the absorbent layer, k is an absorption coefficient of the absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.
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公开(公告)号：US20220075256A1
公开(公告)日：2022-03-10
申请号：US17529124
申请日：2021-11-17
Applicant: AGC Inc.
Inventor： Hirotomo KAWAHARA , Hiroshi HANEKAWA , Toshiyuki UNO , Masafumi AKITA
IPC: G03F1/24 , G03F1/52 , H01L21/027 , H01L21/033
Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.
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公开(公告)号：US20210397077A1
公开(公告)日：2021-12-23
申请号：US17463724
申请日：2021-09-01
Applicant: AGC INC.
Inventor： Hiroshi HANEKAWA , Tsuyoshi KAKUTA , Yoichi SERA , Sadatatsu IKEDA
Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.
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公开(公告)号：US20190049836A1
公开(公告)日：2019-02-14
申请号：US16056786
申请日：2018-08-07
Applicant: AGC INC.
Inventor： Hiroshi HANEKAWA , Tsuyoshi KAKUTA , Yoichi SERA , Sadatatsu IKEDA
Abstract: A reflective mask blank includes, on/above a substrate in the following order from the substrate side a multilayer reflective film which reflects EUV light and an absorber film which absorbs EUV light. The absorber film is a tantalum-based material film containing a tantalum-based material. The absorber film provides a peak derived from the tantalum-based material in an X-ray diffraction pattern, the peak having a peak diffraction angle (2θ) of 36.8 degrees or more and a full width at half maximum of 1.5 degrees or more.
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