-
1.发明公开公开(公告)号：US20230288794A1
公开(公告)日：2023-09-14
申请号：US18321913
申请日：2023-05-23
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Hirotomo KAWAHARA , Kenichi SASAKI , Ichiro ISHIKAWA , Toshiyuki UNO
Abstract: A reflective mask blank for EUV lithography, includes, in the following order, a substrate, a multilayer reflective film reflecting EUV light, a protective film for the multilayer reflective film, and an absorption layer absorbing EUV light, in which the protective film includes rhodium (Rh) or a rhodium material including Rh and at least one element selected from the group consisting of nitrogen (N), oxygen (O), carbon (C), boron (B), ruthenium (Ru), niobium (Nb), molybdenum (Mo), tantalum (Ta), iridium (Ir), palladium (Pd), zirconium (Zr), and titanium (Ti).
-
公开(公告)号：US20210325772A1
公开(公告)日：2021-10-21
申请号：US17235220
申请日：2021-04-20
Applicant: AGC Inc.
Inventor： Hirotomo KAWAHARA , Hiroyoshi TANABE , Toshiyuki UNO , Hiroshi HANEKAWA , Daijiro AKAGI
IPC: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
公开(公告)号：US20190056653A1
公开(公告)日：2019-02-21
申请号：US16056765
申请日：2018-08-07
Applicant: AGC INC.
Inventor： Hirotomo KAWAHARA , Hiroshi HANEKAWA , Toshiyuki UNO
Abstract: A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.
-
4.发明公开公开(公告)号：US20240210814A1
公开(公告)日：2024-06-27
申请号：US18596919
申请日：2024-03-06
Applicant: AGC INC.
Inventor： Hirotomo KAWAHARA , Daijiro AKAGI , Hiroaki IWAOKA , Toshiyuki UNO , Michinori SUEHARA , Keishi TSUKIYAMA
Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
-
5.发明公开公开(公告)号：US20230324785A1
公开(公告)日：2023-10-12
申请号：US18198881
申请日：2023-05-18
Applicant: AGC INC.
Inventor： Hirotomo KAWAHARA , Daijiro AKAGI , Hiroaki IWAOKA , Toshiyuki UNO , Michinori SUEHARA , Keishi TSUKIYAMA
Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
-
Patent Agency Ranking
公开(公告)号：US20230305383A1
公开(公告)日：2023-09-28
申请号：US18201705
申请日：2023-05-24
Applicant: AGC Inc.
Inventor： Hirotomo KAWAHARA , Hiroyoshi TANABE , Toshiyuki UNO , Hiroshi HANEKAWA , Daijiro AKAGI
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.
-
公开(公告)号：US20240152044A1
公开(公告)日：2024-05-09
申请号：US18411376
申请日：2024-01-12
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Hiroaki IWAOKA , Shunya TAKI , Kenichi SASAKI , Ichiro ISHIKAWA , Toshiyuki UNO
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a phase shift film that shifts a phase of the EUV light, in this order. An opening pattern is to be formed in the phase shift film. The phase shift film has a refractive index of 0.920 or less with respect to the EUV light, an extinction coefficient of 0.024 or more with respect to the EUV light, a thickness of 50 nm or less, a normalized image log slope of 2.9 or more for a transferred image when a line-and-space pattern is formed on a target substrate, and a tolerance range of a focal depth of the transferred image is 60 nm or less.
-
公开(公告)号：US20250004360A1
公开(公告)日：2025-01-02
申请号：US18884196
申请日：2024-09-13
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Takuma KATO , Keishi TSUKIYAMA , Toshiyuki UNO , Hiroshi HANEKAWA , Ryusuke OISHI , Sadatatsu IKEDA , Yukihiro IWATA , Chikako HANZAWA
Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.
-
公开(公告)号：US20240176225A1
公开(公告)日：2024-05-30
申请号：US18417352
申请日：2024-01-19
Applicant: AGC INC.
Inventor： Hiroyoshi TANABE , Hiroshi HANEKAWA , Toshiyuki UNO
Abstract: A reflective mask blank includes a substrate and, on or above the substrate in order, a reflective layer for reflecting EUV light, a protective layer for protecting the reflective layer, and an absorbent layer for absorbing EUV light. The absorbent layer has a reflectance for a wavelength of 13.53 nm of from 2.5% to 10% and consists of a lower absorption layer and an upper absorption layer. A film thickness dbi of the absorbent layer satisfies a relationship of:
dbi MAX−(i×6+1) nm≤dbi≤dbi MAX−(i×6−1) nm
where the integer i is 0 or 1, and dbi MAX is represented by:
d
bi
MAX
(
nm
)
=
13.53
2
n
cos
6
°
{
INT
(
0.58
1
-
n
1
)
+
1
2
π
(
tan
-
1
(
-
k
2
1
-
n
2
)
+
0.64
)
}
,
where n1 is a refractive index of the lower absorbent layer, n2 is a refractive index of the upper absorbent layer, k2 is an absorption coefficient of the upper absorbent layer, and INT(x) is a function of returning an integer value obtained by truncating a decimal part.-
公开(公告)号：US20220299862A1
公开(公告)日：2022-09-22
申请号：US17835742
申请日：2022-06-08
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Hirotomo KAWAHARA , Hiroyoshi TANABE , Toshiyuki UNO
Abstract: A reflective mask blank for EUV lithography includes, in the following order, a substrate, a multilayer reflective film for reflecting EUV light, a phase shift film for shifting a phase of EUV light, and an etching mask film. The phase shift film is constituted of a ruthenium-based material containing ruthenium as a main component. The phase shift film has a film thickness of 20 nm or larger. The etching mask film is removable with a cleaning liquid comprising an acid or a base.
-
-
-
-
-
-
-
-
-
Search Results
15
records
(took 0.015 seconds)
