利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

21 条记录 (耗时 0.024 秒)

    GLASS SUBSTRATE, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE
    12.
    发明申请
    GLASS SUBSTRATE, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE 审中-公开

    公开(公告)号：US20190161387A1

    公开(公告)日：2019-05-30

    申请号：US16264722

    申请日：2019-02-01

    申请人： AGC INC.

    发明人： Shuhei Nomura ,  Kazutaka Ono

    IPC分类号： C03C3/091 ,  C03C4/20 ,  H01L27/12 ,  H01L29/786 ,  H01L21/762

    摘要： A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |Δα50/100| of a difference between an average coefficient of thermal expansion α50/100 of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |Δα100/200| of a difference between an average coefficient of thermal expansion α100/200 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |Δα200/300| of a difference between an average coefficient of thermal expansion α200/300 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.

    Substrate, liquid crystal antenna and high-frequency device
    13.
    发明授权
    Substrate, liquid crystal antenna and high-frequency device 有权

    公开(公告)号：US12071373B2

    公开(公告)日：2024-08-27

    申请号：US17022264

    申请日：2020-09-16

    申请人： AGC Inc.

    发明人： Shuhei Nomura ,  Kazutaka Ono

    IPC分类号： B32B15/04 ,  B32B17/06 ,  C03C3/091 ,  C03C4/16 ,  H01Q1/36

    CPC分类号： C03C4/16 ,  C03C3/091 ,  H01Q1/36 ,  C03C2204/00

    摘要： The present invention relates to a substrate having a dielectric loss tangent (A) as measured at 20° C. and 10 GHz of 0.1 or less, a dielectric loss tangent (B) as measured at 20° C. and 35 GHz of 0.1 or less, and a ratio [a dielectric loss tangent (C) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz]/[the dielectric loss tangent (A)] of 0.90-1.10, or a substrate having a relative permittivity (a) as measured at 20° C. and 10 GHz of 4 or more and 10 or less, a relative permittivity (b) as measured at 20° C. and 35 GHz of 4 or more and 10 or less, and a ratio [a relative permittivity (c) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz]/[the relative permittivity (a)] of 0.993-1.007.

    Glass substrate, liquid crystal antenna and high-frequency device
    15.
    发明授权
    Glass substrate, liquid crystal antenna and high-frequency device 有权

    公开(公告)号：US11594811B2

    公开(公告)日：2023-02-28

    申请号：US17550080

    申请日：2021-12-14

    申请人： AGC Inc.

    发明人： Shuhei Nomura ,  Kazutaka Ono

    IPC分类号： H01Q1/38 ,  H01Q1/22 ,  H01Q9/04 ,  H01Q15/00

    摘要： Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}≤300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

    Glass substrate, semiconductor device, and display device
    16.
    发明授权
    Glass substrate, semiconductor device, and display device 有权

    公开(公告)号：US11554983B2

    公开(公告)日：2023-01-17

    申请号：US16264722

    申请日：2019-02-01

    申请人： AGC INC.

    发明人： Shuhei Nomura ,  Kazutaka Ono

    IPC分类号： C03C3/091 ,  C03C4/20 ,  H01L21/02 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1333 ,  H01L21/762 ,  H01L29/66

    摘要： A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |Δα50/100| of a difference between an average coefficient of thermal expansion α50/100 of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |Δα100/200| of a difference between an average coefficient of thermal expansion α100/200 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |Δα200/300| of a difference between an average coefficient of thermal expansion α200/300 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.

    Alkali-free glass substrate, laminated substrate, and glass substrate production method
    17.
    发明授权
    Alkali-free glass substrate, laminated substrate, and glass substrate production method 有权

    公开(公告)号：US11247933B2

    公开(公告)日：2022-02-15

    申请号：US16264734

    申请日：2019-02-01

    申请人： AGC INC.

    发明人： Shuhei Nomura ,  Kazutaka Ono

    IPC分类号： B32B15/04 ,  C03C3/093 ,  C03B17/06 ,  B32B17/00 ,  C03C3/091 ,  C03B25/087

    摘要： An alkali-free glass substrate which is a glass substrate includes, as represented by molar percentage based on oxides, 0.1% to 10% of ZnO. The alkali-free glass substrate has an average coefficient of thermal expansion α50/100 at 50 to 100° C. of from 2.70 ppm/° C. to 3.20 ppm/° C., an average coefficient of thermal expansion α200/300 at 200 to 300° C. of from 3.45 ppm/° C. to 3.95 ppm/° C., and a value α200/300/α50/100 obtained by dividing the average coefficient of thermal expansion α200/300 at 200 to 300° C. by the average coefficient of thermal expansion α50/100 at 50 to 100° C. of from 1.20 to 1.30.