公开(公告)号：US11697272B2

公开(公告)日：2023-07-11

申请号：US17746630

申请日：2022-05-17

Applicant: AGC Inc.

Inventor： Shunsuke Sadakane ,  Shoichi Takeuchi ,  Hideo Tsuboi ,  Kazuhiko Niwano ,  Nobutaka Kidera ,  Ryota Okuda

IPC: B32B17/10 ,  B32B7/025 ,  B32B27/20 ,  B32B27/30 ,  B60J1/00

CPC classification number: B32B17/10614 ,  B32B7/025 ,  B32B17/10036 ,  B32B17/10761 ,  B32B27/20 ,  B32B27/30 ,  B32B2250/05 ,  B32B2250/40 ,  B32B2264/1023 ,  B32B2305/30 ,  B32B2307/204 ,  B32B2307/732 ,  B32B2315/08 ,  B32B2329/06 ,  B32B2605/006 ,  B32B2605/08 ,  B60J1/001

Abstract: A laminated glass according to the present invention includes a first glass plate, a second glass plate, and an interlayer film. The interlayer film includes a laminated region including a first layer that is in contact with the first glass plate, a second layer that is in contact with the second glass plate, and a third layer disposed between the first layer and the second layer. When the relative dielectric constant of the first glass plate is denoted by εg1, the relative dielectric constant of the second glass plate is denoted by εg2, the relative dielectric constant of the first layer is denoted by εm1, the relative dielectric constant of the second layer is denoted by εm2, and the relative dielectric constant of the third layer is denoted by εm3, relationships εm1 εm1, εm3>εm2 are established.

公开(公告)号：US11370200B2

公开(公告)日：2022-06-28

申请号：US16660895

申请日：2019-10-23

Applicant: AGC Inc.

Inventor： Tomoya Hosoda ,  Tatsuya Terada ,  Atsumi Yamabe ,  Nobutaka Kidera ,  Wataru Kasai

IPC: B32B27/00 ,  C08F214/26 ,  C08J5/12 ,  C08J5/18 ,  C08J5/24 ,  H05K1/02 ,  H05K1/03 ,  H05K3/02

Abstract: The purpose of the present invention is to provide a fluororesin film or fluororesin laminate excellent in heat resistance and excellent in interlayer adhesion to an object to be laminated, such as a prepreg, a method for producing a hot pressed laminate using said film or laminate, and a method for producing a printed circuit board. The fluororesin film contains a fluororesin having a melting point of from 260 to 380° C., and has an arithmetic average roughness Ra of at least 3.0 nm when inside of 1 μm2 of at least one surface thereof in the thickness direction is measured by an atomic force microscope. The laminate 1 has a layer A10 containing said fluororesin and a layer B12 made of another substrate, wherein the layer A10 has an arithmetic average roughness Ra of at least 3.0 nm when inside of 1 μm2 of a second surface 10b thereof is measured by an atomic force microscope.

公开(公告)号：US11708294B2

公开(公告)日：2023-07-25

申请号：US16720979

申请日：2019-12-19

Applicant: AGC Inc.

Inventor： Kazutaka Ono ,  Shuhei Nomura ,  Nobutaka Kidera ,  Nobuhiko Takeshita

IPC: C03C3/089 ,  C03C4/16 ,  H05K1/03 ,  C03C3/091 ,  H05K1/02 ,  C03B25/08 ,  C03C3/06 ,  C03B19/14 ,  C03C3/087 ,  C03B17/02 ,  C03B17/06 ,  C03C3/118 ,  C03C13/04

CPC classification number: C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  H05K1/024 ,  H05K1/03 ,  C03B17/02 ,  C03B17/064 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/046 ,  C03C2204/08 ,  C03C2217/253

Abstract: A glass substrate for a high-frequency device, which contains SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US12037283B2

公开(公告)日：2024-07-16

申请号：US17174615

申请日：2021-02-12

Applicant: AGC Inc.

Inventor： Kazutaka Ono ,  Shuhei Nomura ,  Nobutaka Kidera ,  Nobuhiko Takeshita

IPC: C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  H05K1/02 ,  H05K1/03 ,  C03B17/02 ,  C03B17/06 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/04

CPC classification number: C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  H05K1/024 ,  H05K1/03 ,  C03B17/02 ,  C03B17/064 ,  C03B19/14 ,  C03B25/08 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/046 ,  C03C2204/08 ,  C03C2217/253

Abstract: A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO2; 0 to 15% of Al2O3; 13 to 23% of B2O3; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US10974987B2

公开(公告)日：2021-04-13

申请号：US16351007

申请日：2019-03-12

Applicant: AGC Inc.

Inventor： Kazutaka Ono ,  Shuhei Nomura ,  Nobutaka Kidera ,  Nobuhiko Takeshita

IPC: C03C3/089 ,  C03C3/091 ,  C03B25/08 ,  C03B19/14 ,  C03C4/16 ,  H05K1/03 ,  C03B17/02 ,  C03B17/06 ,  H05K1/02 ,  C03C3/06 ,  C03C3/087 ,  C03C3/118 ,  C03C13/04

Abstract: The present invention relates to a glass substrate for a high-frequency device, which includes SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of Al2O3 and B2O3 in the range of 1-40% in terms of mole percent on the basis of oxides and having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45, in which at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

公开(公告)号：US11999134B2

公开(公告)日：2024-06-04

申请号：US17874221

申请日：2022-07-26

Applicant: AGC Inc.

Inventor： Nobutaka Kidera ,  Kazuhiko Niwano ,  Shoichi Takeuchi ,  Tetsuo Abe ,  Yutaka Kuroiwa

IPC: B32B17/10 ,  B32B3/18 ,  B32B7/023 ,  B32B7/025

CPC classification number: B32B17/10449 ,  B32B3/18 ,  B32B7/023 ,  B32B7/025 ,  B32B17/10036 ,  B32B17/10614 ,  B32B2250/03 ,  B32B2250/40 ,  B32B2264/1021 ,  B32B2264/1022 ,  B32B2264/1023 ,  B32B2264/501 ,  B32B2307/204 ,  B32B2307/416 ,  B32B2307/42 ,  B32B2605/00

Abstract: A laminated glass according to an embodiment of the present invention includes a first glass plate, a second glass plate, and an interlayer film held between the first glass plate and the second glass plate. When a relative dielectric constant of the first glass plate is represented by εg1; a relative dielectric constant of the second glass plate is represented by εg2; a relative dielectric constant of a first interlayer film provided in a first region of the interlayer film is represented by εm1; a reflection coefficient at an interface between the first glass plate and the first interlayer film is represented by Γ1; and a reflection coefficient at an interface between the second glass plate and the first interlayer film is represented by Γ2, the reflection coefficients Γ1 and Γ2 satisfy relations 0.0≤Γ1≤0.2 and 0.0≤Γ2≤0.2.

公开(公告)号：US11912617B2

公开(公告)日：2024-02-27

申请号：US16860107

申请日：2020-04-28

Applicant: AGC Inc.

Inventor： Nobutaka Kidera ,  Kazuya Sasaki ,  Yasutomi Iwahashi

IPC: C03C3/06 ,  C03C4/16 ,  H01P1/208 ,  H01P3/12 ,  H04B1/40

CPC classification number: C03C3/06 ,  C03C4/16 ,  H01P1/2088 ,  H01P3/121 ,  C03C2201/23 ,  C03C2204/00 ,  H04B1/40

Abstract: A silica glass for a radio-frequency device has an OH group concentration being less than or equal to 300 wtppm; an FQ value being higher than or equal to 90,000 GHz at a frequency of higher than or equal to 25 GHz and lower than or equal to 30 GHz; and a slope being greater than or equal to 1,000 in a case where the FQ value is approximated as a linear function of the frequency in a frequency band of higher than or equal to 20 GHz and lower than or equal to 100 GHz.

公开(公告)号：US11362405B2

公开(公告)日：2022-06-14

申请号：US16911459

申请日：2020-06-25

Applicant: AGC Inc.

Inventor： Nobutaka Kidera

IPC: H01P3/16 ,  H01P1/20

Abstract: A filter includes a waveguide formed in a dielectric surrounded by a conductor wall. The conductor wall includes at least one control wall protruding toward an inner side of the waveguide. The at least one control wall includes an end portion in a protruding direction of the at least one control wall and a central portion in the protruding direction. The end portion includes a wall portion of which wall thickness is different from the central portion.

公开(公告)号：US11041053B2

公开(公告)日：2021-06-22

申请号：US16709049

申请日：2019-12-10

Applicant: AGC Inc.

Inventor： Tomoya Hosoda ,  Eiichi Nishi ,  Toru Sasaki ,  Nobutaka Kidera

IPC: C08J3/12 ,  B32B15/08 ,  B32B27/28 ,  B32B27/30 ,  C08J5/10 ,  B32B27/38 ,  B32B15/20 ,  B32B15/18 ,  B32B9/00 ,  C08L79/08 ,  B32B9/04 ,  C08L101/00 ,  B32B27/32 ,  B32B27/18 ,  B32B27/08 ,  C08L63/00 ,  H05K1/03 ,  B32B5/16 ,  B32B7/12 ,  C08J5/24 ,  H05K3/00 ,  H05K3/06 ,  C08F214/26

Abstract: A resin powder having a high bulk density and an average particle size of at most 50 μm from resin particles containing a fluorocopolymer as the main component and having a melting point of 260 to 320° C., where the fluorocopolymer contains a unit containing a carbonyl group-containing group, a unit based on tetrafluoroethylene, and a unit based on a perfluoro(alkyl vinyl ether) or a unit based on hexafluoropropylene. A method of producing the resin powder by subjecting resin particles (A) having an average particle size of at least 100 μm to mechanical pulverization treatment. The resin particles (A) is made of a material (X) having a fluorocopolymer (X1) as the main component, which has a unit (1) based on a monomer containing at least one functional group selected from a carbonyl group-containing group, a hydroxy group, an epoxy group and an isocyanate group, and a unit (2) based on tetrafluoroethylene.

公开(公告)号：US20190210911A1

公开(公告)日：2019-07-11

申请号：US16351007

申请日：2019-03-12

Applicant: AGC Inc.

Inventor： Kazutaka ONO ,  Shuhei Nomura ,  Nobutaka Kidera ,  Nobuhiko Takeshita

IPC: C03C3/118 ,  C03B17/06 ,  C03C13/04 ,  C03B17/02 ,  H05K1/02

CPC classification number: C03C3/118 ,  C03B17/02 ,  C03B17/064 ,  C03C3/078 ,  C03C3/083 ,  C03C3/089 ,  C03C3/091 ,  C03C4/16 ,  C03C13/046 ,  C03C19/00 ,  H05K1/024 ,  H05K1/03

Abstract: The present invention relates to a glass substrate for a high-frequency device, which includes SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of Al2O3 and B2O3 in the range of 1-40% in terms of mole percent on the basis of oxides and having a molar ratio represented by Al2O3/(Al2O3+B2O3) in the range of 0-0.45, in which at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.