公开(公告)号：US11908684B2

公开(公告)日：2024-02-20

申请号：US17944583

申请日：2022-09-14

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  H01L21/28518

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

公开(公告)号：US20230335392A1

公开(公告)日：2023-10-19

申请号：US18300301

申请日：2023-04-13

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Jhoelle Roche Guhit ,  Makoto Igarashi ,  Hideaki Fukuda ,  Aurelie Kuroda ,  Timothee Blanquart ,  Takahiro Onuma

IPC: H01L21/02 ,  C23C16/36 ,  C23C16/455 ,  C23C16/48 ,  C23C16/52

CPC classification number: H01L21/02167 ,  C23C16/36 ,  C23C16/4554 ,  C23C16/482 ,  C23C16/52 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processors for gap-fill in which deposition is followed by a thermal anneal and ultraviolet treatment and repeated. In some embodiments, the deposition, thermal anneal, and ultraviolet treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for curing.

公开(公告)号：US20220119944A1

公开(公告)日：2022-04-21

申请号：US17451299

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  Rene Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.