公开(公告)号：US11605528B2

公开(公告)日：2023-03-14

申请号：US16921866

申请日：2020-07-06

Applicant: ASM IP Holding B.V.

Inventor： Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01J37/32

Abstract: Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.

公开(公告)号：US20210013010A1

公开(公告)日：2021-01-14

申请号：US16921866

申请日：2020-07-06

Applicant: ASM IP Holding B.V.

Inventor： Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01J37/32

Abstract: Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.

公开(公告)号：US20230203656A1

公开(公告)日：2023-06-29

申请号：US18088255

申请日：2022-12-23

Applicant: ASM IP Holding B.V.

Inventor： Jun Yoshikawa

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/4558 ,  C23C16/45561

Abstract: A gas supply unit is disclosed. Exemplary gas supply unit includes an upper plate provided with a plurality of injection holes, the plurality of injection holes comprising a center injection hole and a plurality of outer injection holes; a divider plate constructed and arranged against the upper plate to guide a flow of gas from the injection holes; a first gas line fluidly coupled to the center injection hole; and a plurality of second gas lines fluidly coupled to the plurality of outer injection holes. The plurality of outer injection holes is arranged concentrically around the center injection hole. The divider plate is provided with a center through hole fluidly communicating with the center injection hole and is provided with a plurality of protrusions extending towards the upper plate thereby creating a plurality of zones, each of the zones fluidly communicating with one of the outer injection holes.

公开(公告)号：US11476109B2

公开(公告)日：2022-10-18

申请号：US16896238

申请日：2020-06-09

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50. Pa.

公开(公告)号：US20220301829A1

公开(公告)日：2022-09-22

申请号：US17697725

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Jun Yoshikawa

IPC: H01J37/32

Abstract: An apparatus for processing a substrate may comprise a reaction chamber provided with a chamber wall; a gate valve provided to the wall; a substrate transfer chamber operational connected to the gate valve; a substrate transfer robot disposed within the substrate transfer chamber for transferring the substrate between the reaction chamber and the substrate transfer chamber through the gate valve; a substrate support provided with a heater disposed within the reaction chamber; and a chiller provided to the wall opposite the gate valve.

公开(公告)号：US12125684B2

公开(公告)日：2024-10-22

申请号：US17697725

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Jun Yoshikawa

IPC: H01J37/32

CPC classification number: H01J37/32522 ,  H01J37/3244

Abstract: Apparatuses for processing substrates with temperature controlled reaction chambers are provided. In some embodiments, an apparatus for processing a substrate includes a reaction chamber provided with a chamber wall; a gate valve provided to the wall; a substrate transfer chamber operationally connected to the gate valve; a substrate transfer robot disposed within the substrate transfer chamber for transferring the substrate between the reaction chamber and the substrate transfer chamber through the gate valve; a substrate support provided with a heater disposed within the reaction chamber; and a chiller provided to the wall opposite the gate valve.

公开(公告)号：US20240162037A1

公开(公告)日：2024-05-16

申请号：US18410333

申请日：2024-01-11

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  H01L21/28518

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

公开(公告)号：US11908684B2

公开(公告)日：2024-02-20

申请号：US17944583

申请日：2022-09-14

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/0217 ,  H01L21/0228 ,  H01L21/28518

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

公开(公告)号：US20230366082A1

公开(公告)日：2023-11-16

申请号：US18195456

申请日：2023-05-10

Applicant: ASM IP Holding B.V.

Inventor： Jun Yoshikawa ,  Wei Chen Liao

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/4412 ,  C23C16/4586 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/45536

Abstract: A film forming apparatus includes a chamber, a susceptor placed in the chamber, an electrode placed inside the susceptor, a conductive shower head arranged above the susceptor apart from each other, an annular exhaust duct arranged so as to surround the outer edge of the susceptor, and an AC power supply that supplies AC power to the electrode, wherein the annular exhaust duct has an exhaust gas introduction member having an exhaust gas inlet and an exhaust gas discharge member having an exhaust gas outlet, the exhaust gas introduction member is arranged on the susceptor side in the radial direction of the susceptor and is made of an insulating material, and the exhaust gas discharge member is arranged on the side opposite to the susceptor side in the radial direction of the susceptor, and is made of a conductive material.

公开(公告)号：US20230005734A1

公开(公告)日：2023-01-05

申请号：US17944583

申请日：2022-09-14

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01L21/02 ,  H01L21/285

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.