公开(公告)号：US20210366712A1

公开(公告)日：2021-11-25

申请号：US17323321

申请日：2021-05-18

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Ryo Miyama ,  Yoshiyuki Kikuchi

IPC: H01L21/033 ,  H01J37/32 ,  C23C16/26 ,  C23C16/56

Abstract: Methods and systems for forming a structure including multiple carbon layers and structures formed using the method or system are disclosed. Exemplary methods include forming a first carbon layer and a second carbon layer, wherein a density and/or other property of the first carbon layer differs from the corresponding property of the second carbon layer.

公开(公告)号：US20210225642A1

公开(公告)日：2021-07-22

申请号：US17148391

申请日：2021-01-13

Applicant: ASM IP Holding B.V.

Inventor： Mitsuya Utsuno ,  Hirotsugu Sugiura ,  Yoshio Susa

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50

Abstract: Methods and systems for forming high aspect ratio features on a substrate are disclosed. Exemplary methods include forming a first carbon layer within a recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the methods or systems are also disclosed.

公开(公告)号：US10290508B1

公开(公告)日：2019-05-14

申请号：US15832188

申请日：2017-12-05

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Yoshio Susa

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/033 ,  H01L29/66

Abstract: A method of forming vertical spacers for spacer-defined multiple patterning, includes: depositing a first conformal pattern-transfer film having a first film stress, and continuously depositing a second conformal pattern-transfer film having a second film stress on a template; dry-etching the template except for a core material and a vertical portion of the first and second pattern-transfer films to form vertical spacers; and dry-etching the core material, forming a vacant space between the vertical spacers, wherein by adjusting the difference in film stress between the first and second pattern-transfer films, the leaning angle of the spacers is adjusted.

公开(公告)号：US20240304441A1

公开(公告)日：2024-09-12

申请号：US18598145

申请日：2024-03-07

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Norihiko Ishinohachi ,  Yoshiyuki Kikuchi

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02216 ,  H01L21/02348

Abstract: A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise steps of: a deposition step comprising: providing a substrate within a first reaction chamber; providing a vinyl-substituted cyclosiloxane precursor to the first reaction chamber; providing a reactant to the first reaction chamber; and providing pulsed plasma power to the first reaction chamber; and a curing step comprising: providing a curing gas to the substrate; and irradiating the substrate with a UV light.

公开(公告)号：US20230137026A1

公开(公告)日：2023-05-04

申请号：US17973903

申请日：2022-10-26

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Koei Aida ,  Ryo Miyama ,  Yoshiyuki Kikuchi

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/683 ,  H01L21/02

Abstract: Methods and apparatuses for etching a perimeter of a substrate are disclosed. Exemplary methods and apparatuses can be used to deposit material and selectively etch material at the perimeter of the substrate within the same reaction chamber.

公开(公告)号：US20230129291A1

公开(公告)日：2023-04-27

申请号：US17970987

申请日：2022-10-21

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Yoshiyuki Kikuchi

IPC: H01L21/3065 ,  H01L21/67

Abstract: A method for etching a bevel edge of a substrate. The method includes providing a substrate with a bevel edge after a thin film has been deposited on a top surface of the substrate and rotating the substrate about its center axis. The method also includes, during the rotating, etching the bevel edge by directing flow of atmospheric plasma onto the bevel edge. The flow is parallel to the top surface of the substrate, such as orthogonal to a plane containing a region of the bevel edge being etched by the atmospheric plasma, which may be O2 atmospheric plasma. The etching is performed without loss of thickness of the thin film on the top surface at a radius spaced apart from an outer radius of the substrate. The substrate may be a silicon (Si) wafer, and the thin film may be a carbon film, amorphous carbon, SiC, SiO, or SiN.

公开(公告)号：US20220406625A1

公开(公告)日：2022-12-22

申请号：US17893383

申请日：2022-08-23

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/448

Abstract: An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a vessel having an inner volume configured to contain a liquid chemical; an array of sensors configured for detecting a fill level of the liquid chemical disposed within the inner volume, wherein the array of sensors are vertically distributed within the inner volume with an irregular vertical interval between adjacent sensors. The apparatus may also include: an inlet disposed in the vessel and configured for providing a carrier gas into the inner volume; and an outlet disposed in the vessel and configured for dispensing the vapor phase reactant from the inner volume to the reaction chamber. A sensor array for detecting the fill level of a liquid chemical is also disclosed, as well as methods for dispensing a vapor phase reactant to a reaction chamber.

公开(公告)号：US10707073B2

公开(公告)日：2020-07-07

申请号：US15695147

申请日：2017-09-05

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Yuko Kengoyama ,  Taishi Ebisudani

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/033 ,  H01L21/311 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40 ,  C23C16/04

Abstract: Examples of a film forming method includes repeating first processing and second processing in this order a plurality of times, wherein the first processing supplies material-1 having one silicon atom per molecule onto a substrate, and then generates plasma while reactant gas is introduced, thereby forming a silicon oxide film on the substrate, and the second processing provides material-2 having two or more silicon atoms per molecule onto the substrate, and then generates plasma while no reactant gas is introduced, thereby forming a double silicon compound on the substrate.

公开(公告)号：US20190172718A1

公开(公告)日：2019-06-06

申请号：US15832188

申请日：2017-12-05

Applicant: ASM IP Holding B.V.

Inventor： Tomohiro Kubota ,  Yoshio Susa

IPC: H01L21/308 ,  H01L21/3213 ,  H01L21/311

Abstract: A method of forming vertical spacers for spacer-defined multiple patterning, includes: depositing a first conformal pattern-transfer film having a first film stress, and continuously depositing a second conformal pattern-transfer film having a second film stress on a template; dry-etching the template except for a core material and a vertical portion of the first and second pattern-transfer films to form vertical spacers; and dry-etching the core material, forming a vacant space between the vertical spacers, wherein by adjusting the difference in film stress between the first and second pattern-transfer films, the leaning angle of the spacers is adjusted.

公开(公告)号：US20190093221A1

公开(公告)日：2019-03-28

申请号：US16130798

申请日：2018-09-13

Applicant: ASM IP Holding B.V.

Inventor： Lucian Jdira ,  Herbert Terhorst ,  Naoto Tsuji ,  Yoshio Susa

IPC: C23C16/448 ,  C23C16/455

Abstract: An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.