公开(公告)号：US10707073B2

公开(公告)日：2020-07-07

申请号：US15695147

申请日：2017-09-05

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Yuko Kengoyama ,  Taishi Ebisudani

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/033 ,  H01L21/311 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40 ,  C23C16/04

Abstract: Examples of a film forming method includes repeating first processing and second processing in this order a plurality of times, wherein the first processing supplies material-1 having one silicon atom per molecule onto a substrate, and then generates plasma while reactant gas is introduced, thereby forming a silicon oxide film on the substrate, and the second processing provides material-2 having two or more silicon atoms per molecule onto the substrate, and then generates plasma while no reactant gas is introduced, thereby forming a double silicon compound on the substrate.

公开(公告)号：US20210057214A1

公开(公告)日：2021-02-25

申请号：US16999065

申请日：2020-08-21

Applicant: ASM IP Holding B.V.

Inventor： Yuko Kengoyama ,  Hidemi Suemori ,  Ryu Nakano

IPC: H01L21/02

Abstract: In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400° C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.

公开(公告)号：US20220319831A1

公开(公告)日：2022-10-06

申请号：US17705158

申请日：2022-03-25

Applicant: ASM IP Holding B.V.

Inventor： Yuko Kengoyama ,  Makoto Igarashi

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  H01J37/32

Abstract: Methods of forming treated silicon nitride layers are disclosed. Exemplary methods include forming a silicon nitride layer overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a nitrogen reactant to the reaction chamber for a reactant pulse period, during a deposition process applying a first plasma power having a first frequency for a first plasma power period, and during a treatment step, applying a second plasma power having a second frequency for a second plasma power period.

公开(公告)号：US12033849B2

公开(公告)日：2024-07-09

申请号：US18077280

申请日：2022-12-08

Applicant: ASM IP Holding B.V.

Inventor： Yuko Kengoyama ,  Hidemi Suemori ,  Ryu Nakano

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/0228

Abstract: In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400° C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.

公开(公告)号：US20230112490A1

公开(公告)日：2023-04-13

申请号：US18077280

申请日：2022-12-08

Applicant: ASM IP Holding B.V.

Inventor： Yuko Kengoyama ,  Hidemi Suemori ,  Ryu Nakano

IPC: H01L21/02

Abstract: In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400° C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.

公开(公告)号：US11527400B2

公开(公告)日：2022-12-13

申请号：US16999065

申请日：2020-08-21

Applicant: ASM IP Holding B.V.

Inventor： Yuko Kengoyama ,  Hidemi Suemori ,  Ryu Nakano

IPC: H01L21/02

Abstract: In a method of depositing a silicon oxide film using bis(diethylamino)silane (BDEAS) on a substrate in a reaction space by plasma-enhanced atomic layer deposition (PEALD), each repeating deposition cycle of PEALD includes steps of: (i) adsorbing BDEAS on the substrate placed on a susceptor having a temperature of higher than 400° C. in an atmosphere substantially suppressing thermal decomposition of BDEAS in the reaction space; and (ii) exposing the substrate on which BDEAS is adsorbed to an oxygen plasma in the atmosphere in the reaction space, thereby depositing a monolayer or sublayer of silicon oxide.

公开(公告)号：US10770257B2

公开(公告)日：2020-09-08

申请号：US16040755

申请日：2018-07-20

Applicant: ASM IP Holding B.V.

Inventor： Yuko Kengoyama ,  Takashi Yoshida

IPC: H05H1/46 ,  H01J37/02 ,  C23C16/56 ,  C23C16/509 ,  H01L21/687 ,  H01L21/3065 ,  H01L21/31

Abstract: Examples of a substrate processing method include subjecting a substrate placed on a susceptor to plasma processing, applying power to an RF electrode facing the susceptor for only a predetermined static electricity removal time to generate plasma, thereby reducing an amount of charge of the substrate, measuring a self-bias voltage of the RF electrode while susceptor pins are made to protrude from a top surface of the susceptor and lift up the substrate, and by a controller, shortening the static electricity removal time when the self-bias voltage has a positive value, and lengthening the static electricity removal time when the self-bias voltage has a negative value.