公开(公告)号：US20180217508A1

公开(公告)日：2018-08-02

申请号：US15874972

申请日：2018-01-19

Applicant: ASML Netherlands B.V.

Inventor： Adam URBANCZYK ,  Hans Van Der Laan ,  Grzegorz Grzela ,  Alberto Da Costa Assafrao ,  Chien-Hung Tseng ,  Jay Jianhui Chen

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G01N21/47 ,  G01N2021/95615 ,  G03F7/70516 ,  G03F7/70525 ,  G03F7/70633

Abstract: Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.

公开(公告)号：US20180173105A1

公开(公告)日：2018-06-21

申请号：US15841811

申请日：2017-12-14

Applicant: ASML Netherlands B.V.

Inventor： Patrick Warnaar ,  Maurits Van Der Schaar ,  Grzegorz Grzela ,  Erik Johan Koop ,  Victor Emanuel Calado ,  Si-Han Zeng

IPC: G03F7/20 ,  G01N21/47

Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R

公开(公告)号：US11009343B2

公开(公告)日：2021-05-18

申请号：US16277317

申请日：2019-02-15

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Vasco Tomas Tenner ,  Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Patrick Warnaar ,  Grzegorz Grzela ,  Martin Jacobus Johan Jak

IPC: G01B11/25 ,  G03F7/20 ,  G02B27/42 ,  G03H1/00 ,  G03H1/04

Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

公开(公告)号：US10481506B2

公开(公告)日：2019-11-19

申请号：US15967861

申请日：2018-05-01

Applicant: ASML Netherlands B.V.

Inventor： Murat Bozkurt ,  Maurits Van Der Schaar ,  Patrick Warnaar ,  Martin Jacobus Johan Jak ,  Mohammadreza Hajiahmadi ,  Grzegorz Grzela ,  Lukasz Jerzy Macht

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956 ,  G01N21/95

Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.

公开(公告)号：US20190265028A1

公开(公告)日：2019-08-29

申请号：US16277317

申请日：2019-02-15

Applicant: Stichting VU ,  Stichting Nederlandse Wetenschappelijk Onderzoek Instituten ,  Universiteit van Amsterdam ,  ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus TINNEMANS ,  Vasco Tomas Tenner ,  Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Patrick Warnaar ,  Grzegorz Grzela ,  Martin Jacobus Johan Jak

IPC: G01B11/25 ,  G03F7/20

Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

公开(公告)号：US20180321599A1

公开(公告)日：2018-11-08

申请号：US15967861

申请日：2018-05-01

Applicant: ASML Netherlands B.V.

Inventor： Murat BOZKURT ,  Maurits Van Der Schaar ,  Patrick Warnaar ,  Martin Jacobus Johan Jak ,  Mohammadreza Hajiahmadi ,  Grzegorz Grzela ,  Lukasz Jerzy Macht

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G03F7/70616 ,  G03F7/7085

Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As′) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.