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公开(公告)号：US20170256465A1
公开(公告)日：2017-09-07
申请号：US15445465
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard McNAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER
IPC: H01L21/66 , G01N21/88 , G01N21/95 , H01L21/308
CPC classification number: H01L22/12 , G01N21/9501 , G03F7/70633 , G03F7/70683 , G03F9/7003
Abstract: A method of determining overlay of a patterning process, the method including: illuminating a substrate with a radiation beam such that a beam spot on the substrate is filled with one or more physical instances of a unit cell, the unit cell having geometric symmetry at a nominal value of overlay; detecting primarily zeroth order radiation redirected by the one or more physical instances of the unit cell using a detector; and determining, by a hardware computer system, a non-nominal value of overlay of the unit cell from values of an optical characteristic of the detected radiation.
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公开(公告)号：US20170255738A1
公开(公告)日：2017-09-07
申请号：US15445536
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard McNAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER
IPC: G06F17/50 , H01L21/308 , H01L21/66
CPC classification number: H01L22/12 , G01N21/9501 , G03F7/70633 , G03F7/70683 , G03F9/7003
Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.
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公开(公告)号：US20240402618A1
公开(公告)日：2024-12-05
申请号：US18698578
申请日：2022-09-30
Applicant: ASML NETHERLANDS B.V.
Inventor： Vahid BASTANI , Raoul Maarten Simon KNOPS , Thomas THEEUWES , Adam Jan URBANCZYK , Jochem Sebastiaan WILDENBERG , Robert Jan VAN WIJK
IPC: G03F7/00
Abstract: A method of determining a performance parameter distribution and/or associated quantile function. The method includes obtaining a quantile function prediction model operable to predict a quantile value for a substrate position and given quantile probability such that the predicted quantile values vary monotonically as a function of quantile probability and using the trained quantile 5 function prediction model to predict quantile values for a plurality of different quantile probabilities for one or more locations on the substrate.
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公开(公告)号：US20240014078A1
公开(公告)日：2024-01-11
申请号：US18230115
申请日：2023-08-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard Mc NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER
CPC classification number: H01L22/12 , G03F7/70683 , G03F7/70633 , G03F9/7003 , G01N21/9501
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US20170255112A1
公开(公告)日：2017-09-07
申请号：US15445612
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard McNAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER , Maria Isabel DE LA FUENTE VALENTIN , Koen VAN WITTEVEEN , Martijn Maria ZAAL , Shu-jin WANG
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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Patent Agency Ranking
公开(公告)号：US20160327870A1
公开(公告)日：2016-11-10
申请号：US15105517
申请日：2014-11-07
Applicant: ASML Netherlands B.V.
Inventor： Kyu Kab RHE , David DECKERS , Hubertus Johannes Gertrudus SIMONS , Thomas THEEUWES
IPC: G03F7/20
CPC classification number: G03F7/70616 , G03F7/70625 , G03F7/70633
Abstract: A method of correcting an image characteristic of a substrate onto which one or more product features have been formed using a lithographic process, and an associated inspection apparatus method. The method includes measuring an error in the image characteristic of the substrate, and determining a correction for a subsequent formation of the product features based upon the measured error and a characteristic of one or more of the product feature(s).
Abstract translation: 使用光刻工艺校正已经形成了一个或多个产品特征的基板的图像特性的方法以及相关联的检查装置方法。 该方法包括测量衬底的图像特性中的误差，以及基于所测量的误差和一个或多个产品特征的特性来确定随后形成产品特征的校正。
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公开(公告)号：US20240061346A1
公开(公告)日：2024-02-22
申请号：US18270644
申请日：2021-12-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Thomas THEEUWES , Jochem Sebastiaan WILDENBERG , Lei ZHANG , Ronald VAN ITHERSUM
IPC: G03F7/00
CPC classification number: G03F7/706837 , G03F7/706839
Abstract: Disclosed is a method of determining a performance parameter or a parameter derived therefrom, the performance parameter being associated with a performance of a lithographic process for forming one or more structures on a substrate subject to the lithographic process. The method comprises obtaining a probability description distribution comprising a plurality of probability descriptions of the performance parameter, each probability description corresponding to a different position on the substrate and decomposing each probability description into a plurality of component probability descriptions to obtain a plurality of component probability description distributions. A component across-substrate-area model is determined for each of said plurality of component probability descriptions, which models its respective component probability description across a substrate area; and a value for said performance parameter or parameter derived therefrom is determined based on the component across-substrate-area models.
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公开(公告)号：US20210035871A1
公开(公告)日：2021-02-04
申请号：US17072391
申请日：2020-10-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard Mc NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER , Maria Isabel DE LA FUENTE VALENTIN , Koen VAN WITTEVEEN , Martijn Maria ZAAL , Shu-jin WANG
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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公开(公告)号：US20200185281A1
公开(公告)日：2020-06-11
申请号：US16790809
申请日：2020-02-14
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard MC NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER
Abstract: A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.
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公开(公告)号：US20190271919A1
公开(公告)日：2019-09-05
申请号：US16461044
申请日：2018-05-23
Applicant: ASML NETHERLANDS B.V.
Inventor： Davit HARUTYUNYAN , Fei JIA , Frank STAALS , Fuming WANG , Hugo Thomas LOOIJESTIJN , Cornelis Johannes RIJNIERSE , Maxim PISARENCO , Roy WERKMAN , Thomas THEEUWES , Tom VAN HEMERT , Vahid BASTANI , Jochem Sebastian WILDENBERG , Everhardus Cornelis MOS , Erik Johannes Maria WALLERBOS
IPC: G03F7/20
Abstract: A method, system and program for determining a fingerprint of a parameter. The method includes determining a contribution from a device out of a plurality of devices to a fingerprint of a parameter. The method including: obtaining parameter data and usage data, wherein the parameter data is based on measurements for multiple substrates having been processed by the plurality of devices, and the usage data indicates which of the devices out of the plurality of the devices were used in the processing of each substrate; and determining the contribution using the usage data and parameter data.
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