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公开(公告)号：US20240361702A1
公开(公告)日：2024-10-31
申请号：US18621218
申请日：2024-03-29
发明人： Anagnostis TSIATMAS , Paul Christiaan Hinnen , Elliott Gerard MC NAMARA , Thomas Theeuwes , Maria Isabel DE LA FUENTE VALENTIN , Mir Homayoun SHAHRJERDY , Arie Jeffrey DEN BOEF , Shu-jin WANG
CPC分类号： G03F7/70633 , G03F7/70625 , G03F7/70683 , G06T7/0006 , G03F7/20 , G06T2207/30148
摘要： A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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公开(公告)号：US20220082944A1
公开(公告)日：2022-03-17
申请号：US17419689
申请日：2019-12-11
发明人： Samee Ur REHMAN , Anagnostis TSIATMAS , Sergey TARABRIN , Elliott Gerard MC NAMARA , Paul Christiaan HINNEN
摘要： A method to calculate a model of a metrology process including receiving a multitude of SEM measurements of a parameter of a semiconductor process, receiving a multitude of optical measurements of the parameter of a semiconductor process, determining a model of a metrology process wherein the optical measurements of the parameter of semiconductor process are mapped to the SEM measurements of the parameter of the semiconductor process using a regression algorithm.
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公开(公告)号：US20210384086A1
公开(公告)日：2021-12-09
申请号：US17408043
申请日：2021-08-20
发明人： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard MC NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER
摘要： A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
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公开(公告)号：US20210255553A1
公开(公告)日：2021-08-19
申请号：US17306670
申请日：2021-05-03
发明人： Zili ZHOU , Nitesh PANDEY , Olger Victor ZWIER , Patrick WARNAAR , Maurits VAN DER SCHAAR , Elliott Gerard MC NAMARA , Arie Jeffrey DEN BOEF , Paul Christiaan HINNEN , Murat BOZKURT , Joost Jeroen OTTENS , Kaustuve BHATTACHARYYA , Michael KUBIS
IPC分类号： G03F7/20 , G01N21/47 , G01N21/95 , G01N21/956 , G03F9/00
摘要： A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shifht (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
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公开(公告)号：US20190049859A1
公开(公告)日：2019-02-14
申请号：US16051697
申请日：2018-08-01
摘要： A method, including: measuring a first plurality of instances of a metrology target on a substrate processed using a patterning process to determine values of at least one parameter of the patterning process using a first metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target; and measuring a second different plurality of instances of the metrology target on the same substrate to determine values of the at least one parameter of the patterning process using a second metrology recipe for applying radiation to, and detecting radiation from, instances of the metrology target, wherein the second metrology recipe differs from the first metrology recipe in at least one characteristic of the applying radiation to, and detecting radiation from, instances of the metrology target.
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6.发明申请公开(公告)号：US20220035259A1
公开(公告)日：2022-02-03
申请号：US17501911
申请日：2021-10-14
发明人： Hakki Ergün CEKLI , Masashi ISHIBASHI , Wendy Johanna Martina VAN DE VEN , Willem Seine Christian ROELOFS , Elliott Gerard MC NAMARA , Rizvi RAHMAN , Michiel KUPERS , Emil Peter SCHMITT-WEAVER , Erik Henri Adriaan DELVIGNE
IPC分类号： G03F7/20 , G01N21/956 , G03F9/00 , H01L21/66
摘要： Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
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公开(公告)号：US20200185281A1
公开(公告)日：2020-06-11
申请号：US16790809
申请日：2020-02-14
发明人： Adriaan Johan VAN LEEST , Anagnostis TSIATMAS , Paul Christiaan HINNEN , Elliott Gerard MC NAMARA , Alok VERMA , Thomas THEEUWES , Hugo Augustinus Joseph CRAMER
摘要： A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.
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8.发明申请公开(公告)号：US20190137892A1
公开(公告)日：2019-05-09
申请号：US16098165
申请日：2017-04-21
发明人： Hakki Ergün CEKLI , Masashi ISHIBASHI , Wendy Johanna Marthina VAN DE VEN , Willem Seine Christian ROELOFS , Elliott Gerard MC NAMARA , Rizvi RAHMAN , Michiel KUPERS , Emil Peter SCHMITT-WEAVER , Erilk Henri Adriaan DELVIGNE
IPC分类号： G03F7/20 , G03F9/00 , G01N21/956 , H01L21/66
摘要： Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.
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