公开(公告)号：US20220121105A1

公开(公告)日：2022-04-21

申请号：US17426806

申请日：2020-01-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Marie-Claire VAN LARE ,  Frank Jan TIMMERMANS ,  Friso WITTEBROOD ,  John Martin MCNAMARA ,  Jozef Maria FINDERS

IPC: G03F1/32

Abstract: An attenuated phase shift patterning device including a first component for reflecting radiation, and a second component for reflecting radiation with a different phase with respect to the radiation reflected from the first component, the second component covering at least a portion of the surface of the first component such that a pattern including at least one uncovered portion of the first component is formed for generating a patterned radiation beam in a lithographic apparatus in use, wherein the second component includes a material having a refractive index with a real part (n) being less than 0.95 and an imaginary part (k) being less than 0.04.

公开(公告)号：US20190204749A1

公开(公告)日：2019-07-04

申请号：US16325228

申请日：2017-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Jozef Maria FINDERS ,  Orion Jonathan Pierre MOURAILLE ,  Anton Bernhard VAN OOSTEN

IPC: G03F7/20

Abstract: A method of tuning a patterning stack, the method including: defining a function that measures how a parameter representing a physical characteristic pertaining to a pattern transferred into a patterning stack on a substrate is affected by change in a patterning stack variable, the patterning stack variable representing a physical characteristic of a material layer of the patterning stack; varying, by a hardware computer system, the patterning stack variable and evaluating, by the hardware computer system, the function with respect to the varied patterning stack variable, until a termination condition is satisfied; and outputting a value of the patterning stack variable when the termination condition is satisfied.

公开(公告)号：US20170329231A1

公开(公告)日：2017-11-16

申请号：US15531731

申请日：2015-11-25

Applicant: ASML Netherlands B.V

Inventor： Jozef Maria FINDERS

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70083 ,  G03F7/70433 ,  G03F7/706

Abstract: A method includes measuring a three-dimensional topography of a feature of a pattern of a lithography patterning device and calculating from the measurements wavefront phase information caused by the three-dimensional topography of the pattern.