公开(公告)号：US20180046091A1

公开(公告)日：2018-02-15

申请号：US15791703

申请日：2017-10-24

申请人： ASML Netherlands B.V.

发明人： Anton Bernhard VAN OOSTEN ,  Paul Christiaan HINNEN ,  Robertus Cornelis Martinus DE KRUIF ,  Robert John SOCHA

IPC分类号： G03F7/20 ,  G03F1/44

CPC分类号： G03F7/70558 ,  G03F1/44 ,  G03F7/70516 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70641

摘要： Disclosed is a patterning device configured to pattern a beam of radiation according to a desired pattern during a lithographic process. The patterning device comprises first features configured to form a first target on a substrate during the lithographic process and second features configured to form a second target on the substrate during the lithographic process. The second features are taller, in a direction transverse to the plane of the first and second targets, than the first features, such that the first and second targets have a relative best focus offset.

公开(公告)号：US20160266483A1

公开(公告)日：2016-09-15

申请号：US15034105

申请日：2014-10-14

申请人： ASML Netherlands B.V.

发明人： Eelco VAN SETTEN ,  Natalia Viktorovna DAVYDOVA ,  Eleni PSARA ,  Anton Bernhard VAN OOSTEN

IPC分类号： G03F1/24 ,  G03F7/20 ,  G03F1/70

CPC分类号： G03F1/24 ,  G03F1/22 ,  G03F1/38 ,  G03F1/44 ,  G03F1/68 ,  G03F1/70 ,  G03F7/2004 ,  G03F7/70433 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70683

摘要： A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by angle, exposed again, rotated by a further angle, exposed, etc. The printed features are measured to determine one or more characteristics of the mask. The method can be used to model shadowing effects of a EUV mask with a thick absorber illuminated at an angle.

摘要翻译： 表征平版印刷掩模类型的方法使用其上具有不同取向的线性特征的测试图案单元的掩模。 掩模被暴露，旋转角度，再次暴露，旋转另一角度，暴露等。测量印刷特征以确定掩模的一个或多个特性。 该方法可用于模拟EUV掩模的阴影效应，其中一个厚度的吸收体以一个角度照射。

公开(公告)号：US20200285155A1

公开(公告)日：2020-09-10

申请号：US16881109

申请日：2020-05-22

申请人： ASML Netherlands B.V.

发明人： Marcus Adrianus VAN DE KERKHOF ,  Anton Bernhard VAN OOSTEN ,  Hans BUTLER ,  Erik Roelof LOOPSTRA ,  Marc Wilhelmus Maria VAN DER WIJST ,  Koen Jacobus Johannes Maria ZAAL

IPC分类号： G03F7/20 ,  G02B7/182 ,  G02B26/08

摘要： Disclosed is a system configured to project a beam of radiation onto a target portion of a substrate within a lithographic apparatus. The system includes a radiation source. The radiation source includes a grating structure operable to suppress the zeroth order of reflected radiation for at least a first component wavelength. The grating structure has a periodic profile including regularly spaced structures providing three surface levels, such that radiation diffracted by the grating structure includes radiation of three phases which destructively interfere for at least the zeroth order of the reflected radiation for the first component wavelength. The grating structure is on a radiation collector within the source.

公开(公告)号：US20190056673A1

公开(公告)日：2019-02-21

申请号：US16045979

申请日：2018-07-26

申请人： ASML Netherlands B.V.

发明人： Fahong LI ,  Miguel GARCIA GRANDA ,  Carlo Cornells Marla LUIJTEN ,  Bart Peter Bert SEGERS ,  Cornelis Andreas Franciscus Johannes VAN DER POEL ,  Frank STAALS ,  Anton Bernhard VAN OOSTEN ,  Mohamed RiDANE

IPC分类号： G03F7/20

摘要： Focus performance of a lithographic apparatus is measured using pairs of targets that have been exposed (1110) with an aberration setting (e.g. astigmatism) that induces a relative best focus offset between them. A calibration curve (904) is obtained in advance by exposing similar targets on FEM wafers (1174, 1172). In a set-up phase, calibration curves are obtained using multiple aberration settings, and an anchor point (910) is recorded, where all the calibration curves intersect. When a new calibration curve is measured (1192), the anchor point is used to produce an adjusted updated calibration curve (1004′) to cancel focus drift and optionally to measure drift of astigmatism. Another aspect of the disclosure (FIG. 13-15) uses two aberration settings (+AST, −AST) in each measurement, reducing sensitivity to astigmatism drift. Another aspect (FIG. 16-17) uses pairs of targets printed with relative focus offsets, by double exposure in one resist layer.

公开(公告)号：US20220404718A1

公开(公告)日：2022-12-22

申请号：US17896892

申请日：2022-08-26

申请人： ASML NETHERLANDS B.V.

发明人： Anton Bernhard VAN OOSTEN

IPC分类号： G03F7/20

摘要： A method for reducing apparatus performance variation. The method includes obtaining (i) a reference performance (e.g., CD) of a reference apparatus (e.g, a reference scanner), (ii) a set of initial leading degrees of freedom selected from a plurality of degrees of freedom of a plurality of pupil facet mirrors of an apparatus (e.g., to be matched scanner) that is selected to reproduce the reference performance, and (iii) exposure data related to one or more parameters (e.g., CD, overlay, focus, etc.) of the patterning process indicating a performance of the apparatus based on the set of initial leading degrees of freedom; and determining a matching pupil of the apparatus based on the set of initial leading degrees of freedom and the exposure data such that the matching pupil reduces a difference between the performance of the apparatus and the reference performance.

公开(公告)号：US20190204749A1

公开(公告)日：2019-07-04

申请号：US16325228

申请日：2017-08-02

申请人： ASML NETHERLANDS B.V.

发明人： Wim Tjibbo TEL ,  Jozef Maria FINDERS ,  Orion Jonathan Pierre MOURAILLE ,  Anton Bernhard VAN OOSTEN

IPC分类号： G03F7/20

摘要： A method of tuning a patterning stack, the method including: defining a function that measures how a parameter representing a physical characteristic pertaining to a pattern transferred into a patterning stack on a substrate is affected by change in a patterning stack variable, the patterning stack variable representing a physical characteristic of a material layer of the patterning stack; varying, by a hardware computer system, the patterning stack variable and evaluating, by the hardware computer system, the function with respect to the varied patterning stack variable, until a termination condition is satisfied; and outputting a value of the patterning stack variable when the termination condition is satisfied.

公开(公告)号：US20170023867A1

公开(公告)日：2017-01-26

申请号：US15214067

申请日：2016-07-19

申请人： ASML Netherlands B.V.

发明人： Frank STAALS ,  Carlo Cornelis Maria LUIJTEN ,  Paul Christiaan HINNEN ,  Anton Bernhard VAN OOSTEN

IPC分类号： G03F7/20 ,  G01B11/27 ,  G01B11/02

CPC分类号： G03F7/70633 ,  G01B11/02 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70625 ,  G03F7/70641

摘要： Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.

摘要翻译： 公开了一种监测光刻工艺参数的方法，例如光刻工艺的焦点和/或剂量。 该方法包括分别采用第一测量配置和第二测量配置获取第一和第二目标测量，以及根据从所述第一目标测量和所述第二目标测量导出的第一度量来确定光刻处理参数。 第一个度量可能是不同的。 还公开了相应的测量和光刻设备，计算机程序和制造设备的方法。

公开(公告)号：US20240126181A1

公开(公告)日：2024-04-18

申请号：US18511454

申请日：2023-11-16

申请人： ASML NETHERLANDS B.V.

发明人： Abraham SLACHTER ,  Stefan HUNSCHE ,  Wim Tjibbo TEL ,  Anton Bernhard VAN OOSTEN ,  Koenraad VAN INGEN SCHENAU ,  Gijsbert RISPENS ,  Brennan PETERSON

IPC分类号： G03F7/00

CPC分类号： G03F7/70633 ,  G03F7/705 ,  G03F7/70558 ,  G03F7/70625

摘要： A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

公开(公告)号：US20200264522A1

公开(公告)日：2020-08-20

申请号：US16645672

申请日：2018-08-03

申请人： ASML Netherlands B.V.

发明人： Laurentius Cornelius DE WINTER ,  Roland Pieter STOLK ,  Frank STAALS ,  Anton Bernhard VAN OOSTEN ,  Paul Christiaan HINNEN ,  Marinus JOCHEMSEN ,  Thomas THEEUWES ,  Eelco VAN SETTEN

IPC分类号： G03F7/20 ,  G21K1/06

摘要： Disclosed is a method of measuring focus performance of a lithographic apparatus, and corresponding patterning device and lithographic apparatus. The method comprises using the lithographic apparatus to print one or more first printed structures and second printed structures. The first printed structures are printed by illumination having a first non-telecentricity and the second printed structures being printed by illumination having a second non-telecentricity, different to said first non-telecentricity. A focus dependent parameter related to a focus-dependent positional shift between the first printed structures and the second printed structures on said substrate is measured and a measurement of focus performance based at least in part on the focus dependent parameter is derived therefrom.

公开(公告)号：US20160363871A1

公开(公告)日：2016-12-15

申请号：US15179509

申请日：2016-06-10

申请人： ASML Netherlands B.V.

发明人： Anton Bernhard VAN OOSTEN ,  Paul Christiaan HINNEN ,  Robertus Cornelis Martinus DE KRUIF ,  Robert John SOCHA

IPC分类号： G03F7/20

CPC分类号： G03F7/70558 ,  G03F1/44 ,  G03F7/70516 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70641

摘要： Disclosed is a method of monitoring a focus parameter during a lithographic process. The method comprises acquiring first and second measurements of, respectively first and second targets, wherein the first and second targets have been exposed with a relative best focus offset. The method then comprises determining the focus parameter from first and second measurements. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.

摘要翻译： 公开了一种在光刻工艺期间监测焦点参数的方法。 该方法包括获取第一和第二目标的第一和第二测量，其中第一和第二目标已经以相对最佳的聚焦偏移曝光。 该方法然后包括从第一和第二测量确定焦点参数。 还公开了相应的测量和光刻设备，计算机程序和制造设备的方法。