公开(公告)号：US12040261B2

公开(公告)日：2024-07-16

申请号：US17707801

申请日：2022-03-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Syu-Tang Liu ,  Tsung-Tang Tsai ,  Huang-Hsien Chang ,  Ching-Ju Chen

IPC: H05K1/02 ,  H01L21/48 ,  H01L23/00 ,  H01L23/13 ,  H01L23/498 ,  H05K1/11

CPC classification number: H01L23/49816 ,  H01L21/4853 ,  H01L23/13 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2224/16238

Abstract: A substrate structure includes a wiring structure, a first bump pad, a second bump pad and a compensation structure. The wiring structure includes a plurality of redistribution layers. The first bump pad and the second bump pad are bonded to and electrically connected to the wiring structure. An amount of redistribution layers disposed under the first bump pad is greater than an amount of redistribution layers disposed under the second bump pad. The compensation structure is disposed under the second bump pad.

公开(公告)号：US11862585B2

公开(公告)日：2024-01-02

申请号：US16798164

申请日：2020-02-21

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Syu-Tang Liu ,  Huang-Hsien Chang ,  Shu-Han Yang

IPC: H01L23/00 ,  H01L23/28 ,  H01L23/495 ,  H01L23/485 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L24/02 ,  H01L23/28 ,  H01L23/485 ,  H01L23/49503 ,  H01L23/5385 ,  H01L25/0655

Abstract: A semiconductor package structure includes a first substrate, a second substrate, a pad layer and a conductive bonding layer. The first substrate has a first surface and a second surface opposite to the first surface. The second substrate has a first surface and a second surface opposite to the first surface. The second substrate is disposed side-by-side with the first substrate. The pad layer is disposed on the second surface of the first substrate and the second surface of the second substrate. The conductive bonding layer is disposed between the pad layer and the second surfaces of the first substrate and the second substrate.

公开(公告)号：US11621229B2

公开(公告)日：2023-04-04

申请号：US17071989

申请日：2020-10-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Syu-Tang Liu ,  Huang-Hsien Chang

IPC: H01L23/538 ,  H01L23/00 ,  H01L21/48

Abstract: A wiring structure and a method for manufacturing the same are provided. The wiring structure includes a substrate structure, a redistribution structure, an adhesive layer and at least one conductive pillar. The redistribution structure includes at least one dielectric layer. The at least one dielectric layer defines at least one through hole extending through the dielectric layer. The adhesive layer is disposed between the redistribution structure and the substrate structure and bonds the redistribution structure and the substrate structure together. The at least one conductive pillar extends through the redistribution structure and the adhesive layer and is electrically connected to the substrate structure. A portion of the at least one conductive pillar is disposed in the through hole of the at least one dielectric layer.

公开(公告)号：US11495557B2

公开(公告)日：2022-11-08

申请号：US16825713

申请日：2020-03-20

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jhao-Cheng Chen ,  Huang-Hsien Chang ,  Wen-Long Lu ,  Shao Hsuan Chuang ,  Ching-Ju Chen ,  Tse-Chuan Chou

IPC: H01L23/00

Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.

公开(公告)号：US11410957B2

公开(公告)日：2022-08-09

申请号：US16937497

申请日：2020-07-23

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Shao Hsuan Chuang ,  Huang-Hsien Chang

IPC: H01L23/00

Abstract: At least some embodiments of the present disclosure relate to a method for manufacturing a bonding structure. The method includes: providing a substrate with a seed layer; forming a conductive pattern on the seed layer; forming a dielectric layer on the substrate and the conductive pattern; and removing a portion of the dielectric layer to expose an upper surface of the conductive pattern without consuming the seed layer.

公开(公告)号：US12249583B2

公开(公告)日：2025-03-11

申请号：US18234300

申请日：2023-08-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Syu-Tang Liu ,  Min Lung Huang ,  Huang-Hsien Chang ,  Tsung-Tang Tsai ,  Ching-Ju Chen

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/367 ,  H01L23/538

Abstract: A package structure includes a wiring structure, a first electronic device, a second electronic device and a reinforcement structure. The wiring structure includes at least one dielectric layer, and at least one circuit layer in contact with the dielectric layer. The at least one circuit layer includes at least one interconnection portion. The first electronic device and the second electronic device are electrically connected to the wiring structure. The second electronic device is electrically connected to the first electronic device through the at least one interconnection portion of the at least one circuit layer. The reinforcement structure is disposed above the at least one interconnection portion of the at least one circuit layer.

公开(公告)号：US11894340B2

公开(公告)日：2024-02-06

申请号：US16685899

申请日：2019-11-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Syu-Tang Liu ,  Min Lung Huang ,  Huang-Hsien Chang ,  Tsung-Tang Tsai ,  Ching-Ju Chen

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/16 ,  H01L23/00 ,  H01L21/78 ,  H01L25/00 ,  H01L23/498

CPC classification number: H01L25/0652 ,  H01L21/78 ,  H01L23/16 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/562 ,  H01L25/50

Abstract: A package structure includes a wiring structure and a first electronic device. The wiring structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The first electronic device is electrically connected to the wiring structure, and has a first surface, a second surface and at least one lateral side surface extending between the first surface and the second surface. The first electronic device includes a first active circuit region and a first protrusion portion. The first protrusion portion protrudes from the at least one lateral side surface of the first electronic device. A portion of the first active circuit region is disposed in the first protrusion portion.

公开(公告)号：US11262506B1

公开(公告)日：2022-03-01

申请号：US16988325

申请日：2020-08-07

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Shao Hsuan Chuang ,  Huang-Hsien Chang

IPC: G02B6/36 ,  H01L21/3065 ,  G02B6/42

Abstract: A recessed portion in a semiconductor substrate and a method of forming the same are provided. The method comprises: forming a mask on the semiconductor substrate; forming a protection layer on a top surface of the mask and on at least one sidewall of the mask, and on at least one surface of the semiconductor substrate exposed by the mask; performing a first etching process to remove the protection layer on the top surface of the mask and on a bottom surface of the semiconductor substrate exposed by the mask; and performing a second etching process to remove the remaining protection layer and to etch the semiconductor substrate to form the recessed portion. In this way, a recessed portion with relatively smooth and vertical sidewalls can be realized.

公开(公告)号：US11215762B2

公开(公告)日：2022-01-04

申请号：US15998408

申请日：2018-08-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Huang-Hsien Chang ,  Po Ju Wu ,  Yu Cheng Chen ,  Wen-Long Lu

IPC: G02B6/44 ,  G02B6/36 ,  G02B6/42

Abstract: An optical device package includes a semiconductor substrate, and an optical device. The semiconductor substrate has a first surface, a second surface different in elevation from the first surface, and a profile connecting the first surface to the second surface. A surface roughness of the profile is greater than a surface roughness of the second surface. The optical device is disposed on the second surface and surrounded by the profile.

公开(公告)号：US20200057201A1

公开(公告)日：2020-02-20

申请号：US15998408

申请日：2018-08-15

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Huang-Hsien Chang ,  Po Ju Wu ,  Yu Cheng Chen ,  Wen-Long Lu

IPC: G02B6/36 ,  G02B6/42 ,  G02B6/44

Abstract: An optical device package includes a semiconductor substrate, and an optical device. The semiconductor substrate has a first surface, a second surface different in elevation from the first surface, and a profile connecting the first surface to the second surface. A surface roughness of the profile is greater than a surface roughness of the second surface. The optical device is disposed on the second surface and surrounded by the profile.