公开(公告)号：US20060024934A1

公开(公告)日：2006-02-02

申请号：US10710737

申请日：2004-07-30

申请人： Kevin Chan ,  Huajie Chen ,  Michael Gribelyuk ,  Judson Holt ,  Woo-Hyeong Lee ,  Ryan Mitchell ,  Renee Mo ,  Dan Mocuta ,  Werner Rausch ,  Paul Ronsheim ,  Henry Utomo

发明人： Kevin Chan ,  Huajie Chen ,  Michael Gribelyuk ,  Judson Holt ,  Woo-Hyeong Lee ,  Ryan Mitchell ,  Renee Mo ,  Dan Mocuta ,  Werner Rausch ,  Paul Ronsheim ,  Henry Utomo

IPC分类号： H01L21/22 ,  H01L21/331

CPC分类号： H01L21/28044 ,  H01L21/324

摘要： The present invention provides a method for retarding the diffusion of dopants from a first material layer (typically a semiconductor) into an overlayer or vice versa. In the method of the present invention, diffusion of dopants from the first semiconductor into the overlayer or vice versa is retarded by forming a monolayer comprising carbon and oxygen between the two layers. The monolayer is formed in the present invention utilizing a chemical pretreatment process in which a solution including iodine and an alcohol such as methanol is employed.

摘要翻译： 本发明提供了一种用于延迟掺杂剂从第一材料层（通常为半导体）扩散到覆盖层或反之亦然的方法。 在本发明的方法中，通过在两层之间形成包含碳和氧的单层来延缓掺杂剂从第一半导体扩散到覆层中或反之亦然。 使用化学预处理方法在本发明中形成单层，其中使用包括碘和醇如甲醇的溶液。

公开(公告)号：US20050282341A1

公开(公告)日：2005-12-22

申请号：US10869658

申请日：2004-06-16

申请人： Dae-Gyu Park ,  Oleg Gluschenkov ,  Michael Gribelyuk ,  Kwong Wong

发明人： Dae-Gyu Park ,  Oleg Gluschenkov ,  Michael Gribelyuk ,  Kwong Wong

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/44 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L29/4966 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28229 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

摘要： The present invention provides a method for depositing a dielectric stack comprising forming a dielectric layer atop a substrate, the dielectric layer comprising at least oxygen and silicon atoms; forming a layer of metal atoms atop the dielectric layer within a non-oxidizing atmosphere, wherein the layer of metal atoms has a thickness of less than about 15 Å; forming an oxygen diffusion barrier atop the layer of metal atoms, wherein the non-oxidizing atmosphere is maintained; forming a gate conductor atop the oxygen diffusion barrier; and annealing the layer of metal atoms and the dielectric layer, wherein the layer of metal atoms reacts with the dielectric layer to provide a continuous metal oxide layer having a dielectric constant ranging from about 25 to about 30 and a thickness less than about 15 Å.

摘要翻译： 本发明提供一种用于沉积电介质堆叠的方法，包括在衬底顶部形成电介质层，所述电介质层至少包含氧和硅原子; 在非氧化性气氛中在所述电介质层的顶部形成金属原子层，其中所述金属原子层具有小于约的厚度; 在金属原子层的上方形成氧扩散阻挡层，其中保持非氧化性气氛; 在氧扩散阻挡层上形成栅极导体; 以及退火所述金属原子层和所述介电层，其中所述金属原子层与所述电介质层反应以提供介电常数范围为约25至约30且厚度小于约的连续金属氧化物层。