公开(公告)号：US06940749B2

公开(公告)日：2005-09-06

申请号：US10669481

申请日：2003-09-23

申请人： David Tsang

发明人： David Tsang

IPC分类号： G11C7/18 ,  G11C8/14 ,  G11C11/15 ,  G11C11/14

CPC分类号： G11C8/14 ,  G11C7/18 ,  G11C11/15

摘要： A method and system for providing and using a magnetic random access memory (MRAM) array are disclosed. The method and system include providing magnetic storage cells, global word lines and global word line segments, of global bit lines and bit line segments, and selection devices. Each word line segment is coupled with at least one global word line such that the word line segments are selectable. Each word line segment is also coupled to a portion of the magnetic storage cells. Each bit line segment is coupled with at least one global bit line such the bit line segments are selectable. Each bit line segment resides in proximity to and is used to write to a portion of the magnetic storage cells. The bit line segments and the word line segments are coupled with and selectable using the plurality of selection devices.

摘要翻译： 公开了一种用于提供和使用磁随机存取存储器（MRAM）阵列的方法和系统。 该方法和系统包括提供全局位线和位线段的磁存储单元，全局字线和全局字线段以及选择装置。 每个字线段与至少一个全局字线耦合，使得字线段是可选择的。 每个字线段也耦合到磁存储单元的一部分。 每个位线段与至少一个全局位线耦合，使得位线段是可选择的。 每个位线段驻留在磁存储单元的一部分附近并被用于写入磁存储单元的一部分。 位线段和字线段与多个选择装置耦合并可选择。

公开(公告)号：US20050180239A1

公开(公告)日：2005-08-18

申请号：US10778781

申请日：2004-02-12

申请人： David Tsang

发明人： David Tsang

IPC分类号： G11C7/04 ,  G11C11/16

CPC分类号： G11C11/16

摘要： A method and system for programming a magnetic memory including a plurality of magnetic elements is disclosed. The method and system include sensing a temperature of the magnetic memory and providing an indication of the temperature of the magnetic memory. The method and system also include providing a current that is based on the indication of temperature of the magnetic memory. The current is temperature dependent and can be used in programming at least a portion of the magnetic elements without the addition of a separately generated current. In addition, the method and system include carrying for at least a portion of the plurality of magnetic elements. The temperature is preferably sensed by at least one temperature sensor, while the current is preferably provided by a current source coupled with the temperature sensor(s).

摘要翻译： 公开了一种用于对包括多个磁性元件的磁存储器进行编程的方法和系统。 该方法和系统包括感测磁存储器的温度并提供磁存储器的温度的指示。 该方法和系统还包括提供基于磁存储器的温度指示的电流。 电流是温度依赖性的，并且可以用于编程至少一部分磁性元件，而不增加单独产生的电流。 此外，该方法和系统包括承载多个磁性元件的至少一部分。 温度优选地由至少一个温度传感器感测，而电流优选地由与温度传感器耦合的电流源提供。

公开(公告)号：US20060119988A1

公开(公告)日：2006-06-08

申请号：US11040728

申请日：2005-01-21

申请人： David Tsang

发明人： David Tsang

IPC分类号： G11B5/55

CPC分类号： G11B5/4813 ,  G11B5/5526

摘要： A method and system for providing a disk drive pivot assembly is disclosed. The method and system include providing a sleeve, a shaft, and a solid lubrication. The sleeve includes a sleeve bearing surface that defines at least a portion of an aperture within the sleeve. The shaft has a shaft bearing surface and is rotatable with respect to the sleeve. The shaft bearing surface abuts the sleeve bearing surface. The solid lubrication resides between the shaft bearing surface and the sleeve bearing surface.

摘要翻译： 公开了一种用于提供盘驱动器枢轴组件的方法和系统。 该方法和系统包括提供套筒，轴和固体润滑。 套筒包括限定套筒内的孔的至少一部分的套筒轴承表面。 轴具有轴承表面并且可相对于套筒旋转。 轴承表面邻接套筒轴承表面。 固体润滑位于轴承表面和套筒轴承表面之间。

公开(公告)号：US06982445B2

公开(公告)日：2006-01-03

申请号：US10688250

申请日：2003-10-16

申请人： David Tsang

发明人： David Tsang

IPC分类号： H01L29/76

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228

摘要： A method and system for providing and using a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells, at least a first write line, and at least a second write line. Each of the magnetic memory cells includes a magnetic element having a top and a bottom. The first write line(s) are connected to the bottom of magnetic element of the first portion of the plurality of magnetic memory cells. The second write line(s) reside above the top of the magnetic element of each of a second portion of the magnetic memory cells. The second write line(s) are electrically insulated from the magnetic element of each of the second portion of the plurality of magnetic memory cells.

摘要翻译： 公开了一种用于提供和使用磁存储器的方法和系统。 该方法和系统包括提供多个磁存储器单元，至少第一写入线和至少第二写入线。 每个磁存储单元包括具有顶部和底部的磁性元件。 第一写入线连接到多个磁存储单元的第一部分的磁性元件的底部。 第二写入线位于磁存储单元的第二部分中的每一个的磁性元件的顶部之上。 第二写入线与多个磁存储单元的第二部分的每一个的磁性元件电绝缘。

公开(公告)号：US06909633B2

公开(公告)日：2005-06-21

申请号：US10688664

申请日：2003-10-16

申请人： David Tsang

发明人： David Tsang

IPC分类号： G11C20060101 ,  G11C11/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/22 ,  H01L23/48

CPC分类号： G11C11/16

摘要： A method and system for providing and using a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells and providing at least one magnetic write line coupled with the plurality of magnetic memory cells. Each of the magnetic memory cells includes a magnetic element having a data storage layer. The data storage layer stores data magnetically. The magnetic write line(s) are magnetostatically coupled with at least the data storage layer of the magnetic element of the corresponding magnetic memory cells. Consequently, flux closure is substantially achieved for the data storage layer of each of the plurality of magnetic memory cells.

摘要翻译： 公开了一种用于提供和使用磁存储器的方法和系统。 该方法和系统包括提供多个磁存储器单元并且提供与多个磁存储单元耦合的至少一个磁写入线。 每个磁存储单元包括具有数据存储层的磁性元件。 数据存储层磁性存储数据。 磁写入线与至少相应磁存储器单元的磁性元件的数据存储层静磁耦合。 因此，对于多个磁存储单元中的每一个的数据存储层，实质上实现了磁通闭合。

公开(公告)号：US06909630B2

公开(公告)日：2005-06-21

申请号：US10459133

申请日：2003-06-11

申请人： David Tsang

发明人： David Tsang

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C7/00

CPC分类号： G11C11/16

摘要： A method and system for providing and using a magnetic random access memory are disclosed. The method and system include providing a plurality of magnetic memory cells, a first plurality of write lines, and a second plurality of write lines. The first plurality of write lines is a plurality of magnetic write lines. At least one of the plurality of magnetic lines and at least one of the second plurality of write lines each carrying a current for writing to at least one of the plurality of magnetic memory cells. Preferably, the plurality of magnetic write lines have soft magnetic properties and are preferably magnetic bit lines. For magnetic tunneling junction stacks within the magnetic memory cells, the magnetic bit lines are preferably significantly thicker than and closely spaced to the free layers of the magnetic memory cells.

摘要翻译： 公开了一种用于提供和使用磁随机存取存储器的方法和系统。 该方法和系统包括提供多个磁存储器单元，第一多个写入线和第二多个写入线。 第一组写入线是多条磁写入线。 多个磁线中的至少一个和第二多个写入线中的至少一个写入线各自承载用于向多个磁存储单元中的至少一个写入的电流。 优选地，多个磁写入线具有软磁性质，并且优选地是磁位线。 对于磁存储器单元内的磁隧道结叠层，磁位线优选地明显地比磁存储单元的自由层更厚并且紧密地间隔开。

公开(公告)号：US20160226491A1

公开(公告)日：2016-08-04

申请号：US14612076

申请日：2015-02-02

申请人： Kai Keung Chan ,  David Tsang ,  Shian-Jiun Fu ,  Chao-Chiang Chen

发明人： Kai Keung Chan ,  David Tsang ,  Shian-Jiun Fu ,  Chao-Chiang Chen

IPC分类号： H03K19/0175 ,  H03K19/177 ,  H03K19/02

CPC分类号： H03K19/017581 ,  H03K19/02 ,  H03K19/17736

摘要： A logic processing device, containing an application specific integrated circuit (“ASIC”) and field programmable gate array (“FPGA”), capable of automatically interfacing between ASIC and FPGA is disclosed. The logic processing device, in one aspect, includes a phase adjustment circuit, ASIC, and configurable logic circuit (“CLC”) wherein the CLC can be an FPGA. While ASIC is able to perform a specific function in accordance with an ASIC clock domain, the CLC is capable of performing a programmable logic function in accordance with an FPGA clock domain. The phase adjustment circuit is used to automatically facilitate a communication between the ASIC and the CLC in accordance with the ASIC clock domain and the FPGA clock domain.

摘要翻译： 公开了一种包含专用集成电路（“ASIC”）和现场可编程门阵列（“FPGA”）的逻辑处理装置，能够自动连接ASIC和FPGA。 逻辑处理装置在一个方面包括相位调整电路，ASIC和可配置逻辑电路（“CLC”），其中CLC可以是FPGA。 虽然ASIC能够根据ASIC时钟域执行特定功能，但是CLC能够根据FPGA时钟域执行可编程逻辑功能。 相位调整电路用于根据ASIC时钟域和FPGA时钟域来自动促进ASIC和CLC之间的通信。

公开(公告)号：US06977838B1

公开(公告)日：2005-12-20

申请号：US10781482

申请日：2004-02-17

申请人： David Tsang ,  Xizeng Shi ,  Po-Kang Wang ,  Hsu Kai (Karl) Yang ,  David Hu

发明人： David Tsang ,  Xizeng Shi ,  Po-Kang Wang ,  Hsu Kai (Karl) Yang ,  David Hu

IPC分类号： G11C20060101 ,  G11C5/14 ,  G11C11/00 ,  G11C11/16 ,  G11C13/00

CPC分类号： G11C11/16 ,  G11C5/145

摘要： A method and system for providing a magnetic memory are disclosed. The method and system include providing a plurality of magnetic memory cells and at least one programmable current source. Each of the plurality of magnetic memory cells includes a first magnetic element. The programmable current source(s) are for programming a portion of the plurality of magnetic memory cells. Each of the programmable current source(s) includes a controller and a current source coupled to the controller. The controller is for determining a current provided by the current source and includes at least a second magnetic element. The second magnetic element(s) are substantially the same as the first magnetic element. The controller determines the current provided by the current source based on the at least the second magnetic element.

摘要翻译： 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁存储器单元和至少一个可编程电流源。 多个磁存储单元中的每一个包括第一磁性元件。 可编程电流源用于对多个磁存储单元的一部分进行编程。 每个可编程电流源包括耦合到控制器的控制器和电流源。 控制器用于确定由电流源提供的电流并且包括至少第二磁性元件。 第二磁性元件基本上与第一磁性元件相同。 控制器基于至少第二磁性元件确定由电流源提供的电流。

公开(公告)号：US06864551B2

公开(公告)日：2005-03-08

申请号：US10606612

申请日：2003-06-26

申请人： David Tsang

发明人： David Tsang

IPC分类号： G11C20060101 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L31/062 ,  H01L43/00

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A method and system for providing a magnetic memory is disclosed. The magnetic memory includes a magnetic element. The magnetic element is written using a first write line and a second write line and resides at an intersection between the first and second write lines. The second write line is oriented at an angle to the first write line. The second write line has a top and at least one side. At least a portion of the second write line is covered by an insulating layer. A magnetic layer covers a portion of the insulating layer. The portion of the insulating layer resides between the magnetic layer and the second write line. The magnetic layer includes a soft magnetic material.

摘要翻译： 公开了一种用于提供磁存储器的方法和系统。 磁存储器包括磁性元件。 使用第一写入线和第二写入线写入磁性元件，并且驻留在第一和第二写入线之间的交叉点处。 第二写入线与第一写入线成一定角度。 第二个写入行具有顶部和至少一个侧面。 第二写入线的至少一部分被绝缘层覆盖。 磁性层覆盖绝缘层的一部分。 绝缘层的部分位于磁性层和第二写入线之间。 磁性层包括软磁性材料。