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公开(公告)号：US4476726A
公开(公告)日：1984-10-16
申请号：US409537
申请日：1982-08-19
CPC分类号： G01L9/0054
摘要： A bridge array employing piezoresistive sensors responsive to the longitudinal piezoresistive effect generally exhibits a positive nonlinearity over a pressure range, while a bridge array employing piezoresistive sensors employing the transverse piezoresistive effect exhibits a negative nonlinearity over the pressure range. A composite pressure transducer is provided by interconnecting a longitudinal and transverse bridge array in a common composite configuration. The resulting transducer exhibits linear operation over the pressure range due to the cancellation of said nonlinearities from the connected arrays.
摘要翻译： 使用响应于纵向压阻效应的压阻式传感器的桥式阵列通常在压力范围内呈现正的非线性，而采用压阻式传感器的桥式阵列采用横向压阻效应，在压力范围内呈现负的非线性。 复合压力传感器通过将公共复合结构中的纵向和横向桥接阵列相互连接来提供。 由于所连接的阵列的所述非线性的消除，所得的换能器在压力范围内呈现线性运行。
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公开(公告)号：US4467656A
公开(公告)日：1984-08-28
申请号：US472850
申请日：1983-03-07
申请人： Joseph R. Mallon , Anthony D. Kurtz
发明人： Joseph R. Mallon , Anthony D. Kurtz
CPC分类号： G01L9/0054 , G01L9/0042 , Y10S73/04
摘要： A pressure transducer employing a semiconductor diaphragm having a convoluted central section surrounded by a rigid peripheral section. The convolutions are a series of concentric grooves formed as squares producing a square nonplanar diaphragm in the preferred embodiment. The convolutions are formed on the semiconductor wafer by an anisotropic etch. Piezoresistive devices are diffused into the diaphragm in the peripheral region to form a bridge array. The transducer structure thus formed is capable of producing a linear and large magnitude voltage signal in response to a relatively small applied pressure or force.
摘要翻译： 一种采用半导体膜片的压力传感器，其具有由刚性周边部分包围的卷积中心部分。 旋转是在优选实施例中形成为产生正方形非平面隔膜的正方形的一系列同心凹槽。 通过各向异性蚀刻在半导体晶片上形成卷积。 压阻器件扩散到外围区域中的隔膜中以形成桥接阵列。 如此形成的传感器结构能够响应于相对小的施加的压力或力而产生线性和大幅度的电压信号。
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公开(公告)号：US4456901A
公开(公告)日：1984-06-26
申请号：US298275
申请日：1981-08-31
IPC分类号： G01L1/22 , G01L9/00 , H01L21/265 , H01L21/762 , H01L29/84
CPC分类号： G01L1/2293 , G01L9/0055 , H01L21/26506 , H01L21/76243 , H01L29/84
摘要： A transducer structure is disclosed which comprises a single crystal semiconductor diaphragm dielectrically isolated by a layer of silicon dioxide from a single crystal gage configuration. The methods depicted employ high dose oxygen which is ion implanted into a monocrystalline wafer to form a buried layer of silicon dioxide with the top surface of the wafer being monocrystalline silicon. An additional layer of silicon is epitaxially grown on the top of the wafer to enable the etching or formation of a desired gage pattern.
摘要翻译： 公开了一种换能器结构，其包括通过单晶计配置的二氧化硅层介电隔离的单晶半导体隔膜。 所描述的方法使用高剂量氧，其被离子注入到单晶晶片中以形成二氧化硅的掩埋层，其中晶片的顶表面是单晶硅。 在晶片的顶部外延生长附加的硅层，以便蚀刻或形成期望的量具图案。
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公开(公告)号：US4445108A
公开(公告)日：1984-04-24
申请号：US425244
申请日：1982-09-28
CPC分类号： G01L9/0055
摘要： There is disclosed a spreading resistance piezoresistive transducer which employs a planar diaphragm member fabricated from a semiconductor material and having deposited on a surface thereof at least three contact areas. A first contact area is located central to the diaphragm with a second area near the periphery of the diaphragm. A third contact is of a larger area and is positioned between the first and second contacts. A source of biasing potential is applied between the first and second contacts to cause current flow indicative of the spreading resistance between the contacts. The value of the spreading resistance varies in accordance with a force applied to the diaphragm.
摘要翻译： 公开了一种扩展电阻压阻式换能器，其使用由半导体材料制造并且在其表面上沉积至少三个接触区域的平面隔膜构件。 第一接触区域位于隔膜的中心，具有靠近隔膜周边的第二区域。 第三触点具有较大的面积并位于第一和第二触点之间。 偏置电位源施加在第一和第二触点之间以引起指示触点之间的扩展电阻的电流。 扩展电阻的值根据施加到隔膜的力而变化。
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公开(公告)号：US3970982A
公开(公告)日：1976-07-20
申请号：US593631
申请日：1975-07-07
IPC分类号： G01L1/22
CPC分类号： G01L1/2206
摘要： A beam transducer of the type activated by a push rod secured to a thin silicon diaphragm including a shallow deflection area determining depression. The rod is secured to the silicon within the depression and is surrounded by a plate of glass having a central rod accommodating aperture and secured to the silicon to generally cover the depression with the rod extending through the aperture in the glass. One end of the rod is coupled to a diffused beam for application of force thereto. Large forces as applied to the diaphragm and hence, the rod and the beam are limited when the silicon is caused to contact the glass plate and is stopped by the plate and according to the depth of the depression.
摘要翻译： 由通过固定到薄硅膜片的推杆激活的类型的光束传感器，其包括确定凹陷的浅偏转区域。 杆被固定到凹陷内的硅上，并且被一块玻璃片围绕，该玻璃板具有中心杆容纳孔，并固定到硅上，以大致覆盖凹陷，杆延伸穿过玻璃中的孔。 杆的一端连接到用于施加力的漫射束。 当硅与玻璃板接触并被板停止并且根据凹陷的深度时，施加到隔膜上的大的力，因此杆和梁受到限制。
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公开(公告)号：US3930412A
公开(公告)日：1976-01-06
申请号：US538351
申请日：1975-01-03
CPC分类号： G01L15/00 , G01L19/0015 , G01L19/0038 , G01L9/0054
摘要： A plurality of individual pressure transducers are mounted or fabricated within a common housing. Each pressure transducer is associated with a separate and distinct pressure port and can be subjected to a different one of a plurality of pressure sensitive locations to be monitored. The pressure transducers can be electrically scanned by means of a scanning device such as a shift register or counter so their individual outputs can be monitored and recorded.
摘要翻译： 多个单独的压力传感器安装或制造在公共壳体内。 每个压力传感器与单独的和不同的压力端口相关联并且可以经受待监控的多个压力敏感位置中的不同的压力传感器。 压力传感器可以通过诸如移位寄存器或计数器之类的扫描装置进行电扫描，从而可对其各个输出进行监视和记录。
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公开(公告)号：US4764747A
公开(公告)日：1988-08-16
申请号：US124089
申请日：1987-11-23
CPC分类号： G01L19/0645 , G01L19/147
摘要： A glass header structure for a pressure transducer employs a cylindrical member fabricated from a borosilicate glass having a thermal expansion coefficient which matches silicon. The glass header has a central aperture which extends from the top to the bottom surface. Positioned about the central aperture are four smaller apertures located at 90 degree intervals and each containing an elongated terminal pin. The pins are of a nail head configuration with a flat top head of a larger diameter than the diameter of the apertures and of the main pin body. Affixed to the flat top surfaces of the terminal pins by means of ball bonding are wires which connect to the terminal areas of a semiconductor pressure transducer which is mounted over the central aperture of the header. In this manner, the glass header serves to electrically and mechanically isolate the semiconductor transducer from the external environment and to further provide isolation of the transducer from voltage and heating effects which are produced during the assembly process necessary to fabricate a complete transducer unit.
摘要翻译： 用于压力传感器的玻璃头部结构采用由具有与硅相匹配的热膨胀系数的硼硅酸盐玻璃制成的圆柱形构件。 玻璃头部具有从顶部延伸到底部表面的中心孔。 围绕中心孔定位的是四个较小的孔，位于90度的间隔处，每个孔包含细长的端子销。 销具有指甲头构型，其具有直径大于孔和主销体直径的平顶头。 通过滚珠接合固定在端子销的平坦顶面上的是连接到安装在集管的中心孔上的半导体压力传感器的端子区域的导线。 以这种方式，玻璃接头用于将半导体换能器与外部环境电气和机械隔离，并进一步提供换能器与制造完整换能器单元所需组装过程中产生的电压和加热效应的隔离。
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18.发明授权Environmentally protected pressure transducers employing two electrically interconnected transducer arrays 失效使用两个电气互连的换能器阵列的环境保护的压力传感器
公开(公告)号：US4695817A
公开(公告)日：1987-09-22
申请号：US748836
申请日：1985-06-26
申请人： Anthony D. Kurtz , Joseph R. Mallon
发明人： Anthony D. Kurtz , Joseph R. Mallon
CPC分类号： G01L19/142 , G01L15/00 , G01L19/0645 , G01L19/0654 , G01L19/148 , G01L9/06
摘要： A transducer employs two separate pressure input ports. Each port is associated with a separate metal diaphragm behind which diaphragm is secured a transducer structure having a cup-shaped silicon pressure diaphragm which is retained within a hollow of the transducer which is oil filled. One transducer structure is a half bridge array and monitors the main pressure applied to the positive port. A full bridge is formed by two resistors associated with the positive port and two resistors in an array associated with the other port which is the negative port. The resistors in the array at the negative port are selected to be larger in magnitude than those at the positive port and exhibit a greater sensitivity per unit of applied pressure. By selecting the magnitudes of the resistors associated with each port as well as the sensitivity, the shunting of resistors at each port will cause the composite transducer to provide an output which is indicative of the pressure applied to the positive port as modified or corrected by the pressure applied to the negative port.
摘要翻译： 传感器采用两个独立的压力输入端口。 每个端口与单独的金属隔膜相关联，隔膜固定在其上，该换能器结构具有杯形硅压力隔膜，该隔膜保持在充满换能器的中空部分内。 一个传感器结构是半桥阵列，并监测施加到正端口的主要压力。 全桥由与正端口相关联的两个电阻器和与作为负端口的另一端口相关联的阵列中的两个电阻器形成。 在负端口处的阵列中的电阻器被选择为大于正端口处的电阻器，并且在单位施加的压力下表现出更高的灵敏度。 通过选择与每个端口相关联的电阻器的大小以及灵敏度，每个端口处的电阻器的分流将使得复合换能器提供输出，该输出指示施加到正端口上的压力，这是由 施加到负端口的压力。
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19.发明授权
公开(公告)号：US4410871A
公开(公告)日：1983-10-18
申请号：US297250
申请日：1981-08-28
申请人： Joseph R. Mallon , Anthony D. Kurtz
发明人： Joseph R. Mallon , Anthony D. Kurtz
CPC分类号： G01L9/0054
摘要： There is disclosed a semiconductor pressure transducer which employs a piezoresistive array fabricated on the surface of a thin substrate member and having the piezoresistors coupled to metallic contacts via ion implanted terminal leads.
摘要翻译： 公开了一种半导体压力传感器，其使用在薄衬底构件的表面上制造的压阻阵列，并且通过离子注入的端子引线将压敏电阻耦合到金属触点。
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20.发明授权Semiconductor transducers employing flat bondable surfaces with buried contact areas 失效使用具有埋入接触区域的平坦可粘合表面的半导体传感器
公开(公告)号：US4202217A
公开(公告)日：1980-05-13
申请号：US859834
申请日：1977-12-12
申请人： Anthony D. Kurtz , Joseph R. Mallon
发明人： Anthony D. Kurtz , Joseph R. Mallon
CPC分类号： B81B7/0077 , G01L9/0042 , G01L9/0054 , G01B2210/64
摘要： A semiconductor pressure transducer includes a base member fabricated from n-type silicon. The base member has a central depression defining an active area and located on a bottom surface; diffused in the top surface, is at least one contact area which is directed from the active region towards the periphery of said base member. A piezoresistive sensor is located on said top surface and in contact with said contact area within said active region. A layer of epitaxial material surrounds the active region and has an aperture on the surface which is in communication with the contact area outside said active region. The epitaxial layer is polished at a top surface and a housing is coupled to the region by means of a suitable bond. Alternate methods of fabricating the transducer are shown employing both polycrystalline and monocrystalline epitaxial layers.
摘要翻译： 半导体压力传感器包括由n型硅制成的基底构件。 基座部件具有限定有源区域并位于底面上的中央凹部; 在顶表面中扩散的至少一个接触区域从有源区域朝向所述基底构件的周边引导。 压阻传感器位于所述顶表面上并与所述有源区域内的所述接触区域接触。 一层外延材料围绕有源区域，并且在表面上具有与所述有源区域外部的接触区域连通的孔。 外延层在顶表面被抛光，壳体通过合适的键连接到该区域。 示出了制造换能器的替代方法，其采用多晶和单晶外延层。
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