公开(公告)号：US20190157052A1

公开(公告)日：2019-05-23

申请号：US15821661

申请日：2017-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Kenny Linh DOAN ,  Usama Dadu ,  Wonseok Lee ,  Daishuke Shimizu ,  Li Ling ,  Kevin Choi

IPC: H01J37/32 ,  H02N13/00 ,  H01L21/683 ,  B08B5/00 ,  B08B7/00

CPC classification number: H01J37/32862 ,  B08B5/00 ,  B08B7/0071 ,  H01J37/32146 ,  H01J37/32724 ,  H01J37/32816 ,  H01L21/67069 ,  H01L21/6831 ,  H02N13/00

Abstract: Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

公开(公告)号：US09159554B2

公开(公告)日：2015-10-13

申请号：US14262400

申请日：2014-04-25

Applicant: Applied Materials, Inc.

Inventor： Errol Antonio C. Sanchez ,  Xinyu Bao ,  Wonseok Lee ,  David Keith Carlson ,  Zhiyuan Ye

IPC: H01L21/8238 ,  H01L21/02 ,  H01L21/762

CPC classification number: H01L21/02546 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/762

Abstract: Embodiments described herein generally relate to a method of fabrication of a device structure comprising Group III-V elements on a substrate. A surface may be formed on a substrate and a Group III-V material may be grown from the surface to form a Group III-V device structure in a trench isolated between a dielectric layer. A final critical dimension of the device structure may be trimmed to achieve a suitably sized node structure.

Abstract translation: 本文描述的实施例通常涉及在衬底上制造包含III-V族元素的器件结构的方法。 可以在衬底上形成A 111表面，并且可以从III族表面生长III-V族材料，以在介电层之间隔离的沟槽中形成III-V族器件结构。 可以修剪设备结构的最终关键尺寸以实现适当尺寸的节点结构。