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公开(公告)号：US20240184015A1
公开(公告)日：2024-06-06
申请号：US18073177
申请日：2022-12-01
Inventor： Peter G. Schunemann , Kevin T. Zawilski
CPC classification number: G02B1/02 , C30B25/18 , C30B29/42 , C30B29/44 , C30B31/06 , H05K9/0081 , H05K9/0094
Abstract: IR window slabs of GaP greater than 4 inches diameter, and of GaAs greater than 8 inches diameter, are grown on a substrate using Hydride Vapor Phase Epitaxy (HVPE), preferably low pressure HVPE (LP-HVPE). Growth rates can be hundreds of microns per hour, comparable to vertical melt growth. GaAs IR windows produced by the disclosed method exhibit lower absorption than crystals grown from vertical melt near 1 micron, due to reduced impurities and reduced growth temperatures that limit the solubility of excess arsenic, and thereby reduce the “EL2” defects that cause high absorption near one micron in conventional GaAs boules. Silicon wafers can be used as HVPE substrates. For GaAs, layers of GaAsP that vary from 0% to 100% As can be applied to the substrate. EMI shielding can be applied by adding a dopant during the final stage of growth to provide a conductive GaAs or GaP layer.
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公开(公告)号：US20240183065A1
公开(公告)日：2024-06-06
申请号：US18073228
申请日：2022-12-01
Inventor： Peter G. Schunemann , Kevin T. Zawilski
CPC classification number: C30B25/186 , C30B29/42 , C30B29/44 , C30B31/06 , C30B33/06
Abstract: A method of growing large GaAs or GaP IR window slabs by HVPE, and in embodiments by LP-HVPE, includes obtaining a plurality of thin, single crystal, epitaxial-quality GaAs or GaP wafers, cleaving the wafers into tiles having ultra-flat, atomically smooth, substantially perpendicular edges, and then butting the tiles together to form an HVPE substrate larger than 4 inches for GaP, and larger than 8 inches or even 12 inches for GaAs. Subsequent HVPE growth causes the individual tiles to fuse by optical bonding into a large “tiled” single crystal wafer, while any defects nucleated at the tile boundaries are healed, causing the tiles to merge with themselves and with the slab with no physical boundaries, and no degradation in optical quality. A dopant such as Si can be added to the epitaxial gases during the final HVPE growth stage to produce EMI shielded GaAs windows.
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公开(公告)号：US20150235848A1
公开(公告)日：2015-08-20
申请号：US14422850
申请日：2014-06-11
Inventor： Peter G. Schunemann , Kevin T. Zawilski
CPC classification number: H01L21/02546 , C22C28/00 , C30B25/00 , C30B29/42 , H01L21/02395 , H01L21/0262
Abstract: A novel bulk GaAs with an increased carrier lifetime of at least 10 microseconds has been produced. This novel GaAs has many uses to improve optical and electrical devices. The method of producing the GaAs crystal involves using a technique called low pressure hydride phase epitaxy (LP-HVPE). In this technique, a gas containing Ga (typically GaCl) is reacted with a gas containing As (typically AsH3) at the surface of a GaAs substrate. When grown under the proper conditions, the epitaxial, vapor grown GaAs crystal has ultra-long free carrier lifetimes of at least one order of magnitude greater than that of the previous art of 1 microsecond. This very long free carrier lifetime GaAs will be particularly useful as a semiconductor radiation detector material and is also expected to be useful for many other applications than include medical imaging, solar cells, diode lasers, and optical limiters and other applications.
Abstract translation: 已经产生了具有至少10微秒的载流子寿命增加的新型体GaAs。 这种新型GaAs具有改进光电器件的许多用途。 制造GaAs晶体的方法涉及使用称为低压氢化物相外延（LP-HVPE）的技术。 在该技术中，含有Ga（通常为GaCl）的气体与在GaAs衬底的表面上含有As（通常为AsH 3）的气体反应）。 当在合适的条件下生长时，外延，气相生长的GaAs晶体的超长自由载流子寿命至少比先前技术的1微秒大一个数量级。 这种非常长的自由载流子寿命的GaAs将作为半导体辐射检测器材料是特别有用的，并且预期对于许多其它应用来说是有用的，包括医学成像，太阳能电池，二极管激光器和光学限制器以及其他应用。
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公开(公告)号：US20240183075A1
公开(公告)日：2024-06-06
申请号：US18073183
申请日：2022-12-01
Inventor： Peter G. Schunemann , Kevin T. Zawilski
Abstract: A method of making GaP window slabs having largest dimensions of greater than 4 inches and GaAs IR window slabs having largest dimensions of greater than 8 inches, includes slicing and dicing at least one smaller GaAs or GaP single crystal boule, which can be a commercial boule, to form a plurality of rectangular slabs. The slabs are ground to have precisely perpendicular edges, which are polished to be ultra-flat and ultra-smooth, for example to a flatness of at least λ/10, and a roughness Ra of less than 10 nanometers. The slab edges are then aligned and fused via optical-contacting/bonding to create a large GaAs or GaP slab having negligible bond interface losses. A conductive, doped GaAs or GaP layer can be applied to the window for EMI shielding in a subsequent vacuum deposition step, followed by applying anti-reflection (AR) coatings to one or both of the slab faces.
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Patent Agency Ranking
公开(公告)号：US20190011803A1
公开(公告)日：2019-01-10
申请号：US15641683
申请日：2017-07-05
Inventor： Paul R. Moffitt , Peter A. Ketteridge , Peter G. Schunemann
Abstract: A solid state optical beam steering device and method of operation includes converting a frequency or wavelength of a signal in a non-linear converter associated with one channel just before launch. A second channel has a similar constructions and operation. A processor compares the phase difference between the two channels and uses the difference to horizontally steer a beam without moving mechanical parts. This establishes the solid-state nature of the present disclosure. The non-linear converter may be a quasi-phase matched non-linear converter with alternating crystal domains.
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公开(公告)号：US20170204533A1
公开(公告)日：2017-07-20
申请号：US15474139
申请日：2017-03-30
Inventor： Peter G. Schunemann , Kevin T. Zawilski
IPC: C30B25/14 , C30B25/12 , C30B29/42 , H01L31/0304
CPC classification number: C30B25/14 , C30B25/12 , C30B29/42 , H01L31/0304
Abstract: A system and method for producing bulk GaAs with an increased carrier lifetime of at least 10 microseconds is provided. The system and method of producing the GaAs crystal involves using a technique called low pressure hydride vapor phase epitaxy (LP-HVPE). In this technique, a gas containing Ga (typically GaCl) is reacted with a gas containing As (typically AsH3) at the surface of a GaAs substrate. When grown under the proper conditions, the epitaxial, vapor grown GaAs crystal has ultra-long free carrier lifetimes of at least one order of magnitude greater than that of the previous lifetime of 1 microsecond. This very long free carrier lifetime GaAs will be particularly useful as a semiconductor radiation detector material and is also expected to be useful for many other applications than include medical imaging, solar cells, diode lasers, and optical limiters and other applications.
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公开(公告)号：US09704706B2
公开(公告)日：2017-07-11
申请号：US14422850
申请日：2014-06-11
Inventor： Peter G. Schunemann , Kevin T. Zawilski
CPC classification number: H01L21/02546 , C22C28/00 , C30B25/00 , C30B29/42 , H01L21/02395 , H01L21/0262
Abstract: A novel bulk GaAs with an increased carrier lifetime of at least 10 microseconds has been produced. This novel GaAs has many uses to improve optical and electrical devices. The method of producing the GaAs crystal involves using a technique called low pressure hydride vapor phase epitaxy (LP-HVPE). In this technique, a gas containing Ga (typically GaCl) is reacted with a gas containing As (typically AsH3) at the surface of a GaAs substrate. When grown under the proper conditions, the epitaxial, vapor grown GaAs crystal has ultra-long free carrier lifetimes of at least one order of magnitude greater than that of the previous art of 1 microsecond. This very long free carrier lifetime GaAs will be particularly useful as a semiconductor radiation detector material and is also expected to be useful for many other applications than include medical imaging, solar cells, diode lasers, and optical limiters and other applications.
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公开(公告)号：US08493649B2
公开(公告)日：2013-07-23
申请号：US13761203
申请日：2013-02-07
Inventor： Peter G. Schunemann , Kevin T. Zawilski
CPC classification number: C30B11/003 , C30B11/02 , C30B11/12 , C30B29/10 , G02F1/3551
Abstract: CdSiP2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 μm, 1.55 μm, and 2 μm lasers to wavelengths between 2 μm and 10 μm. Due to the high thermal conductivity and low losses of the claimed CdSiP2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 μm laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP2 crystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 μm.
Abstract translation: 公开了适合用作非线性光学器件的尺寸和光学质量的CdSiP 2晶体以及基于此的NLO器件。 还公开了通过来自化学计量熔体的定向凝固来生长晶体的方法。 所公开的NLO晶体具有比可由固态激光器泵浦的现有技术晶体更高的非线性系数，并且对于在2mum至10um之间的波长的1.06μm，1.55μm和2μm激光器的频移特别有用。 由于所要求的CdSiP2晶体的高导热性和低损耗，平均输出功率可以超过10W而没有严重的热透镜。 还公开了一种用作医疗激光手术刀的6.45毫米激光源，其中将CdSiP2晶体配置为非临界相位匹配，由1064nm Nd：YAG激光器泵浦，并进行温度调节以产生6.45mum的输出 。
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公开(公告)号：US20130158528A1
公开(公告)日：2013-06-20
申请号：US13741456
申请日：2013-01-15
Inventor： Peter G. Schunemann , Kevin T. Zawilski
CPC classification number: G02F1/35 , A61B18/20 , G02F1/3551
Abstract: CdSiP2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 μm, 1.55 μm, and 2 μm lasers to wavelengths between 2 μm and 10 μm. Due to the high thermal conductivity and low losses of the claimed CdSiP2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 μm laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP2 crystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 μm.
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