Bottom electrode via structures for micromachined ultrasonic transducer devices

    公开(公告)号:US11484911B2

    公开(公告)日:2022-11-01

    申请号:US16844857

    申请日:2020-04-09

    Abstract: A ultrasonic transducer device includes a transducer bottom electrode layer disposed over a substrate, and a plurality of vias that electrically connect the bottom electrode layer with the substrate, wherein substantially an entirety of the plurality of vias are disposed directly below a footprint of a transducer cavity. Alternatively, the transducer bottom electrode layer includes a first metal layer in contact with the plurality of vias and a second metal layer formed on the first metal layer, the first metal layer including a same material as the plurality of vias.

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