公开(公告)号：US10895774B2

公开(公告)日：2021-01-19

申请号：US15985876

申请日：2018-05-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Yang

IPC: G02F1/1335 ,  H01L27/12 ,  G09G3/3258 ,  H01L29/66 ,  G02F1/1333 ,  G02F1/1362 ,  H01L29/786 ,  G02F1/1368

Abstract: The present disclosure discloses an array substrate, including a first active layer formed on a substrate; a first gate insulating layer on the substrate and the first active layer; a first gate electrode and a second gate electrode formed on the first gate insulating layer; a second gate insulating layer on the first gate insulating layer and the first and second gate electrodes; a second active layer and second source and drain electrodes formed on the second gate insulating layer, the second source and drain electrodes being electrically connected to the second active layer; an interlayer insulating layer on the second gate insulating layer, the second active layer and the second source and drain electrodes; and first source and drain electrodes formed on the interlayer insulating layer, the first source and drain electrodes being electrically connected to the first active layer.

公开(公告)号：US10818694B2

公开(公告)日：2020-10-27

申请号：US16166356

申请日：2018-10-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Yang ,  Hehe Hu ,  Xinhong Lu

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L27/32

Abstract: The present disclosure relates to array substrate, preparation method thereof and display panel. An array substrate comprises: a first thin film transistor and a second thin film transistor over a substrate; wherein the first thin film transistor comprises a first portion of a first insulating layer, the first insulating layer comprises a first recess corresponding to the second thin film transistor, and the second thin film transistor is located in the first recess; and wherein a thickness of a second portion of the first insulating layer, which is below the bottom of the first recess, is smaller than that of the first portion of the first insulating layer.

公开(公告)号：US10748938B2

公开(公告)日：2020-08-18

申请号：US16134201

申请日：2018-09-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Tianmin Zhou ,  Wei Yang ,  Lizhong Wang ,  Jipeng Song

IPC: H01L21/00 ,  H01L27/12 ,  H01L21/30 ,  H01L29/786

Abstract: an array substrate, a method of manufacturing the array substrate, and a display device are provided. The array substrate includes: a base substrate; a first thin film transistor and a second thin film transistor on the base substrate, wherein the first thin film transistor comprises a first active layer, the second thin film transistor comprises a second active layer, and the second active layer is on a side of the first active layer away from the base substrate; and an interlayer dielectric layer and a first buffer layer between the first active layer and the second active layer, wherein the interlayer dielectric layer is capable of supplying hydrogen and the first buffer layer is capable of blocking hydrogen.

公开(公告)号：US10483296B2

公开(公告)日：2019-11-19

申请号：US15300362

申请日：2015-10-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Wei Yang ,  Xiang Liu

IPC: H01L27/12 ,  H01L21/425 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32

Abstract: A thin-film transistor (TFT) and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are disclosed. The manufacturing method of a TFT includes: forming an active layer, a gate electrode, a source electrode and a drain electrode respectively electrically connected with the active layer, and a gate insulating layer disposed between the gate electrode and the active layer, so that the gate electrode, the source electrode and the drain electrode are formed in the same patterning process. The method can reduce the number of masks used in the manufacturing process of the TFT or an array substrate, reduce the technology process, improve the productivity, and reduce the production cost.

公开(公告)号：US10430635B2

公开(公告)日：2019-10-01

申请号：US15767704

申请日：2017-09-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qingrong Ren ,  Wei Yang ,  Jianming Sun ,  Yingwei Liu ,  Liangjian Li ,  Haisheng Wang ,  Yingming Liu

IPC: G06K9/00

Abstract: A fingerprint identification sensor, a fingerprint identification method and an electronic device are disclosed. The fingerprint identification sensor includes a substrate; a fingerprint sensing element disposed on the substrate and including a thin film transistor, an off-state leakage current of the thin film transistor varying with the intensity of light irradiating onto an active area thereof; and a fingerprint identification light source arranged to emit light that irradiates onto a finger and is reflected thereby, the reflected light irradiating onto the active area of the thin film transistor. Thus, the fingerprint identification can be realized conveniently, and the fingerprint identification sensor has at least one of the advantages like high sensitivity and simple structure.

公开(公告)号：US10290661B2

公开(公告)日：2019-05-14

申请号：US15677542

申请日：2017-08-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Yang

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: A method of fabricating a TFT includes a step of forming a gate electrode, a gate insulation layer, an active layer, a source electrode, a drain electrode, a passivation layer and a connection electrode, wherein a pattern including the gate electrode, the source electrode and the drain electrode, the active layer and the gale insulation layer is formed by one patterning process, a pattern including the passivation layer and a via hole through the passivation layer is formed by one patterning process, and a pattern of the connection electrode is formed by one patterning process to electrically connect the source electrode and the drain electrode with the active layer.

公开(公告)号：US20160308061A1

公开(公告)日：2016-10-20

申请号：US15097508

申请日：2016-04-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Yang ,  Woo Bong Lee ,  Ce Ning ,  Wenlin Zhang

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02587 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969

Abstract: A thin film transistor and a fabrication method thereof, and a display device are provided. The thin film transistor comprises an active layer, wherein, a target oxide is formed at a portion of the active layer where an oxygen content is higher than oxygen contents of other portions of the active layer, and a carrier mobility of the target oxide is greater than that of other portions of the active layer.

Abstract translation: 提供薄膜晶体管及其制造方法，以及显示装置。 薄膜晶体管包括有源层，其中，在活性层的氧含量高于活性层的其它部分的氧含量的部分形成目标氧化物，并且目标氧化物的载流子迁移率更大 比活性层的其它部分的厚度大。

公开(公告)号：US11532686B2

公开(公告)日：2022-12-20

申请号：US16330719

申请日：2018-09-11

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xinhong Lu ,  Ke Wang ,  Hehe Hu ,  Ce Ning ,  Wei Yang

IPC: H01L29/78 ,  H01L27/32 ,  H01L29/786

Abstract: An array substrate includes a base substrate; a first thin film transistor on the base substrate and including a first active layer, a first gate electrode, a first source electrode and a first drain electrode; a second thin film transistor on the base substrate and including a second active layer, a second gate electrode, a second source electrode and a second drain electrode; a first gate insulating layer between the first active layer and the first gate electrode; and a second gate insulating layer between the second active layer and the second gate electrode, the second gate insulating layer being different from the first gate insulating layer. The first source electrode, the first drain electrode, and the second gate electrode are in a same layer. The first source electrode and the first drain electrode are on a side of the second gate insulating layer distal to the base substrate.

公开(公告)号：US11430844B2

公开(公告)日：2022-08-30

申请号：US16471911

申请日：2018-11-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Yang

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L51/00 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: An array substrate, a manufacturing method thereof and an organic light emitting diode display device are provided. The manufacturing method of the array substrate includes forming a first thin film transistor including a first semiconductor pattern, including forming a first electrode pattern including a first source electrode and a first drain electrode and a second electrode pattern including a first auxiliary source electrode and a first auxiliary drain electrode respectively through two patterning processes; forming a second thin film transistor including forming a second source electrode and a second drain electrode through one patterning process. The second electrode pattern, the second source electrode and the second drain electrode are formed in the same patterning process, the first electrode pattern is connected with the first semiconductor pattern.

公开(公告)号：US11362114B2

公开(公告)日：2022-06-14

申请号：US16765216

申请日：2019-12-06

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Yang ,  Guangcai Yuan ,  Ce Ning ,  Xinhong Lu ,  Tianmin Zhou ,  Xin Yang

IPC: H01L27/12

Abstract: A method of manufacturing an array substrate includes: forming a first semiconductor pattern and a first insulating layer group sequentially on a base substrate; forming a second semiconductor pattern and a second insulating layer group sequentially on the first insulating layer group; forming two first via holes in the first insulating layer group and the second insulating layer group to expose the first semiconductor pattern, annealing the exposed first semiconductor pattern and then removing an oxide layer on a surface of the first semiconductor pattern; forming connecting wires in the first via holes; forming second via holes in the second insulating layer group to expose the second semiconductor pattern, and forming a first source electrode and a first drain electrode in the second via holes such that the first source electrode or the first drain electrode covers and is connected to one of the connecting wires.