公开(公告)号：US07476472B2

公开(公告)日：2009-01-13

申请号：US11161084

申请日：2005-07-22

Applicant: Ming-Feng Shieh ,  Benjamin Szu-Min Lin ,  Chun-Chi Yu ,  Jian-Shin Liou

Inventor： Ming-Feng Shieh ,  Benjamin Szu-Min Lin ,  Chun-Chi Yu ,  Jian-Shin Liou

IPC: G03F1/00

CPC classification number: G03F1/32 ,  G03F1/36

Abstract: The present invention provides a method for designing a mask. First, a main pattern including at least a strip pattern is formed on the mask substrate. A shift feature is added to one end of the strip pattern of the main pattern. Either the phase shift or the optical transmission or both of the shift feature can be adjusted to optimize the resultant critical dimension between line-ends of the main pattern, thus improving pullback of the line-ends of the strip pattern in the main pattern.

Abstract translation: 本发明提供一种掩模设计方法。 首先，在掩模基板上形成至少包括带状图案的主图案。 移位功能被添加到主图案的条纹图案的一端。 可以调整相移或光学传输或移位特征两者以优化主图案的线端之间的合成临界尺寸，从而改善主图案中带状图案的线端的拉回。

公开(公告)号：US07105255B2

公开(公告)日：2006-09-12

申请号：US10428688

申请日：2003-05-01

Applicant: Benjamin Szu-Min Lin

Inventor： Benjamin Szu-Min Lin

IPC: G01F9/00

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/24

Abstract: An invention of lithography process using an improved reflection mask is provided for extreme ultraviolet (EUV) lithography. In the process an incident EUV is transmitted onto the reflection mask at a grazing incident angle. Therefore a reflected EUV develops a pattern image to a photo resist layer on the surface of the wafer, wherein the shape of the pattern image is dependent on the shape of a plurality of reflective regions on the surface of the reflection mask. Specially, the improved reflection mask is more easily fabricated. The surface roughness and the defects of the reflection mask are also more easily controlled. The improved EUV lithography process is more efficient and cheap.

Abstract translation: 提供了使用改进的反射掩模的光刻工艺的发明用于极紫外（EUV）光刻。 在该过程中，入射EUV以掠入射角传播到反射掩模上。 因此，反射的EUV将图案图像发展到晶片表面上的光致抗蚀剂层，其中图案图像的形状取决于反射掩模表面上的多个反射区域的形状。 特别地，改进的反射掩模更容易制造。 反射罩的表面粗糙度和缺陷也更容易控制。 改进的EUV光刻工艺更加高效和便宜。

公开(公告)号：US07074528B2

公开(公告)日：2006-07-11

申请号：US10739423

申请日：2003-12-18

Applicant: Jochen Schacht ,  Uwe Paul Schroeder ,  Benjamin Szu-Min Lin

Inventor： Jochen Schacht ,  Uwe Paul Schroeder ,  Benjamin Szu-Min Lin

IPC: G01F9/00

CPC classification number: G03F1/36

Abstract: A photomask with desired illumination conditions can be constructed by combining a base pattern of openings with an assist pattern which includes openings that are offset from respectively corresponding openings of the base pattern by a preset angular distance.

Abstract translation: 具有期望的照明条件的光掩模可以通过将开口的基本图案与辅助图案组合而构成，该辅助图案包括从底座图案的相应开口偏移预定角距离的开口。

公开(公告)号：US07018788B2

公开(公告)日：2006-03-28

申请号：US10904795

申请日：2004-11-30

Applicant: Benjamin Szu-Min Lin

Inventor： Benjamin Szu-Min Lin

IPC: G03C5/00 ,  G03F9/00

CPC classification number: G03F1/30 ,  G03F1/70

Abstract: A dual phase shifting mask (PSM)/double exposure lithographic process for manufacturing a shrunk semiconductor device. A semiconductor wafer having a photoresist layer coated thereon is provided. A first phase shift mask is disposed over the semiconductor wafer and implementing a first exposure process to expose the photoresist layer to light transmitted through the first phase shift mask so as to form a latent pattern comprising a peripheral unexposed line pattern in the photoresist layer. The first phase shift mask is then replaced with a second phase shift mask and implementing a second exposure process to expose the photoresist layer to light transmitted through the second phase shift mask so as to remove the peripheral unexposed line pattern.

Abstract translation: 用于制造缩小半导体器件的双相移掩模（PSM）/双曝光光刻工艺。 提供其上涂覆有光致抗蚀剂层的半导体晶片。 第一相移掩模设置在半导体晶片上方，并且实施第一曝光工艺以将光致抗蚀剂层暴露于透过第一相移掩模的光，从而在光致抗蚀剂层中形成包括外围未曝光线图案的潜像。 然后用第二相移掩模替换第一相移掩模，并实施第二曝光处理以将光致抗蚀剂层暴露于通过第二相移掩模传输的光，以便除去周围的未曝光线图案。

公开(公告)号：US06534412B1

公开(公告)日：2003-03-18

申请号：US09686250

申请日：2000-10-11

Applicant: Benjamin Szu-Min Lin

Inventor： Benjamin Szu-Min Lin

IPC: H01L21302

CPC classification number: H01L21/02046

Abstract: A method for removing a native oxide layer using hydrogen to react with the native oxide layer is described. Oxygen atoms in silicon dioxide is replaced to achieve the purpose of native oxide removal. Additionally, laser enhancement is used to lower the reaction temperature to between 200°-700° C. The purpose of low-temperature native oxide removal is thus achieved.

Abstract translation: 描述了使用氢去除天然氧化物层以与天然氧化物层反应的方法。 二氧化硅中的氧原子被替换以达到除去天然氧化物的目的。 此外，使用激光增强将反应温度降低至200-700℃。因此实现了低温自然氧化物去除的目的。

公开(公告)号：US06207328B1

公开(公告)日：2001-03-27

申请号：US09378704

申请日：1999-08-23

Applicant: Benjamin Szu-Min Lin

Inventor： Benjamin Szu-Min Lin

IPC: G03F900

CPC classification number: G03F1/29

Abstract: The present invention relates to a method of forming a phase shift mask on a mask substrate. This method comprises sequentially forming a phase shifter layer and a shield layer on the mask substrate, forming a photo-resist layer on a predetermined region of the shield layer, wherein the periphery of the photo-resist layer comprises at least one vertical side-wall, and forming a deposition layer uniformly on the photo-resist layer and the shield layer surrounding the photo-resist layer. Next, silylanizing the deposition layer. Next, performing an anisotropic etching process to remove the deposition layer on top of the photo-resist layer and the shield layer surrounding the photo-resist layer, and to partially remove the deposition layer covered on the vertical side-wall of the photo-resist layer so as to form a spacer on the vertical side-wall of the photo-resist layer. Then, vertically removing the shield layer and the phase shifter layer not covered by the photo-resist layer and the spacer, and vertically removing the spacer and the shield layer under the spacer. Lastly, removing the photo-resist layer completely to complete the phase shift mask.

Abstract translation: 本发明涉及在掩模基板上形成相移掩模的方法。 该方法包括在掩模基板上依次形成移相器层和屏蔽层，在屏蔽层的预定区域上形成光致抗蚀剂层，其中光刻胶层的周边包括至少一个垂直侧壁 并且在光致抗蚀剂层和围绕光致抗蚀剂层的屏蔽层上均匀地形成沉积层。 接下来，对沉积层进行甲硅烷化。 接下来，进行各向异性蚀刻处理以除去光致抗蚀剂层和围绕光致抗蚀剂层的屏蔽层顶部的沉积层，并且部分地去除覆盖在光致抗蚀剂的垂直侧壁上的沉积层 以在光致抗蚀剂层的垂直侧壁上形成间隔物。 然后，垂直移除未被光致抗蚀剂层和间隔物覆盖的屏蔽层和移相器层，并且在间隔物下垂直移除间隔物和屏蔽层。 最后，完全去除光刻胶层以完成相移掩模。

公开(公告)号：US06184090B2

公开(公告)日：2001-02-06

申请号：US09421308

申请日：1999-10-20

Applicant: Benjamin Szu-Min Lin

Inventor： Benjamin Szu-Min Lin

IPC: H01L21336

CPC classification number: H01L29/66666

Abstract: A fabrication method for a vertical MOS device is described, in which dopants are implanted in the active region to form, from the bulk to the surface of the wafer respectively, a first doped layer, a second doped layer and a third doped layer. A portion of the isolation structure above the first doped layer is then removed, exposing the sidewalls of the second doped layer and the surface of the third doped layer but still concealing the first doped layer in the substrate. A gate oxide layer is further formed on the sidewalls of the second doped layer and the surface of the third doped layer. Furthermore, a conductive layer is formed at the second doped layer, covering the isolation structure, wherein the second doped layer and the conductive layer are isolated by the gate oxide layer.

Abstract translation: 描述了一种用于垂直MOS器件的制造方法，其中将掺杂剂注入到有源区中以分别从晶体体到表面形成第一掺杂层，第二掺杂层和第三掺杂层。 然后去除第一掺杂层之上的隔离结构的一部分，暴露第二掺杂层的侧壁和第三掺杂层的表面，但仍然掩盖衬底中的第一掺杂层。 在第二掺杂层的侧壁和第三掺杂层的表面上进一步形成栅氧化层。 此外，在第二掺杂层处形成覆盖隔离结构的导电层，其中第二掺杂层和导电层被栅极氧化物层隔离。

公开(公告)号：US6117599A

公开(公告)日：2000-09-12

申请号：US307045

申请日：1999-05-07

Applicant: Benjamin Szu-Min Lin

Inventor： Benjamin Szu-Min Lin

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F9/7065 ,  G03F7/7035 ,  G03F7/70991 ,  G03F9/7096

Abstract: An alignment and exposure process that use the same incident beam. A substrate having a photoresist formed on an upper surface of the substrate is provided. At least one alignment mark is located on a bottom surface of the substrate. A mask is located over the photoresist. An incident beam is projected onto a light splitter over the mask, wherein the incident beam is reflected onto the alignment mark to align the mask with the substrate. The first light is split into a transmission light and a reflection light. The transmission light passes through the light splitter and the mask to expose the photoresist and the reflection light is projected onto the alignment mark to dynamically align the mask with the substrate.

Abstract translation: 使用相同入射光束的对准和曝光过程。 提供了具有形成在基板的上表面上的光致抗蚀剂的基板。 至少一个对准标记位于基底的底表面上。 掩模位于光刻胶上。 将入射光束投射到掩模上的光分离器上，其中入射光束被反射到对准标记上以使掩模与基板对准。 第一光被分成透射光和反射光。 透射光通过分光器和掩模以暴露光致抗蚀剂，并且反射光被投射到对准标记上以使掩模与衬底动态对准。

公开(公告)号：US6107132A

公开(公告)日：2000-08-22

申请号：US207923

申请日：1998-12-09

Applicant: Chuan-Fu Wang ,  Jason J. S. Jenq ,  Benjamin Szu-Min Lin

Inventor： Chuan-Fu Wang ,  Jason J. S. Jenq ,  Benjamin Szu-Min Lin

IPC: H01L21/02 ,  H01L21/8242 ,  H01L21/8234

CPC classification number: H01L27/10852 ,  H01L27/10873 ,  H01L28/91

Abstract: A method of manufacturing a DRAM capacitor comprises the steps of providing a substrate having a word line, a source/drain region, a bit line and a first insulator layer. A hard mask layer and a second insulator layer are formed on the first insulator layer in sequence. Next, an opening is formed to expose a portion of the first insulator layer by patterning the second insulator layer and the hard mask layer. Thereafter, a spacer is formed on the side wall of the opening and a node contact hole is formed to expose a portion of the source/drain region in the first insulator layer. The second insulator layer is stripped to expose the hard mask layer and a conductive layer is formed over the hard mask layer and fills the node contact hole. A bottom electrode is formed by patterning the conductive layer and a dielectric layer and another conductive layer are formed over the bottom electrode in sequence.

Abstract translation: 制造DRAM电容器的方法包括以下步骤：提供具有字线，源极/漏极区，位线和第一绝缘体层的衬底。 依次在第一绝缘体层上形成硬掩模层和第二绝缘体层。 接下来，形成通过图案化第二绝缘体层和硬掩模层来露出第一绝缘体层的一部分的开口。 此后，在开口的侧壁上形成间隔件，并且形成节点接触孔以暴露第一绝缘体层中的源/漏区的一部分。 剥离第二绝缘体层以露出硬掩模层，并且在硬掩模层上形成导电层并填充节点接触孔。 通过图案化导电层和介电层形成底部电极，并且在底部电极上依次形成另一个导电层。

公开(公告)号：US6081318A

公开(公告)日：2000-06-27

申请号：US145750

申请日：1998-09-02

Applicant: Benjamin Szu-Min Lin

Inventor： Benjamin Szu-Min Lin

IPC: G03F1/00 ,  G03F7/20 ,  G21K1/08 ,  H01J37/317 ,  G03B27/42 ,  G03F9/00 ,  G21K5/10

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/50 ,  G03F7/2032 ,  G03F7/2059 ,  G21K1/08 ,  H01J37/3174

Abstract: An installation for forming a double-sided photomask includes a first and a second particle sources and a first and a second focusing assemblies positioned on each side of a mechanical stage. The mechanical stage is used for holding a masking plate that requires pattern inscription. The particles generated by the first and the second particle sources are channeled to the first and second focusing assemblies, respectively. Within each focusing assembly, the particle beam is focused to a desired resolution for inscribing a pattern onto each face of the masking plate, thereby forming a double-sided photomask. The installation further includes a controlling unit coupled to the particle sources, the focusing assemblies and the mechanical stage for controlling system operation. In addition, there is a photomask pattern generator coupled to the controlling unit for supplying pattern data to the controlling unit.

Abstract translation: 用于形成双面光掩模的装置包括第一和第二颗粒源以及位于机械台的每一侧上的第一和第二聚焦组件。 机械台用于保持需要花纹铭文的掩模板。 由第一和第二颗粒源产生的颗粒分别被引导到第一和第二聚焦组件。 在每个聚焦组件内，将粒子束聚焦到期望的分辨率，以将图案刻印在掩模板的每个面上，从而形成双面光掩模。 该装置还包括耦合到颗粒源的控制单元，聚焦组件和用于控制系统操作的机械平台。 此外，存在耦合到控制单元的光掩模图案发生器，用于向控制单元提供图案数据。