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11.发明申请Lateral Field Effect Transistor and Its Fabrication Comprising a Spacer Layer Above and Below the Channel Layer 有权横向场效应晶体管及其制造包括通道层上方和下方的间隔层公开(公告)号：US20070262321A1
公开(公告)日：2007-11-15
申请号：US11661962
申请日：2004-09-01
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/66068 , H01L21/0465 , H01L29/1029 , H01L29/1058 , H01L29/1608 , H01L29/2003 , H01L29/802 , H01L29/808 , H01L29/812
摘要： A lateral field effect transistor for high switching frequencies having a source region layer (4) and a drain region layer (5) laterally spaced and of highly doped first conductivity type, a first-conductivity-type channel layer (6) of lower doping concentration extending laterally and interconnecting the source region layer (4) and the drain region layer (5). The transistor has a gate electrode (7) arranged to control the properties of the channel layer (6), and a highly doped second-conductivity-type base layer (8) arranged under the channel layer (6) at least partially overlapping the gate electrode (7) and at a lateral distance to the drain region layer (5), the highly doped second-conductivity-type base layer (8) being shorted to the source region layer (4). The transistor also has at least one of the following: a) a spacer layer (10) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and gate electrode (7), at least in the vicinity of the gate electrode (7), and/or b) a spacer layer (9) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and the highly doped second-conductivity-type base layer (8).
摘要翻译： 一种用于高开关频率的横向场效应晶体管，具有横向隔开的源区域层（4）和漏极区域层（5）以及高度掺杂的第一导电类型，具有较低掺杂浓度的第一导电型沟道层（6） 横向延伸并互连源区域层（4）和漏极区域层（5）。 晶体管具有布置成控制沟道层（6）的性质的栅电极（7），并且布置在沟道层（6）下方的高度掺杂的第二导电型基极层（8）至少部分地与栅极 电极（7），并且在与漏极区域（5）的横向距离处，高掺杂的第二导电型基极层（8）与源区域层（4）短路。 晶体管还具有以下至少一个：a）具有与沟道层（6）相邻并位于沟道层（6）和栅电极（7）之间的半导体材料的间隔层（10），至少在 栅极电极（7）的附近，和/或b）具有与沟道层（6）相邻并位于沟道层（6）和高度掺杂的第二导电型基底之间的半导体材料的间隔层（9） 层（8）。
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公开(公告)号：US20060281238A1
公开(公告)日：2006-12-14
申请号：US11474431
申请日：2006-06-26
申请人： Christopher Harris , Thomas Gehrke , T. Weeks , Cem Basceri , Elif Berkman
发明人： Christopher Harris , Thomas Gehrke , T. Weeks , Cem Basceri , Elif Berkman
IPC分类号： H01L21/338
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.
摘要翻译： 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。 此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。
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公开(公告)号：USD507493S1
公开(公告)日：2005-07-19
申请号：US29201523
申请日：2004-03-17
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公开(公告)号：USD489970S1
公开(公告)日：2004-05-18
申请号：US29181091
申请日：2003-05-05
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15.发明授权Method for producing a semiconductor layer of SiC of the 3C-polytype and a semiconductor device having an insulator between a carrier and the active semiconductor layer 失效3C型多晶型SiC的半导体层的制造方法以及在载体和有源半导体层之间具有绝缘体的半导体装置
公开(公告)号：US5798293A
公开(公告)日：1998-08-25
申请号：US804685
申请日：1997-02-25
申请人： Christopher Harris
发明人： Christopher Harris
IPC分类号： C30B25/02 , H01L20060101 , H01L21/20 , H01L21/30 , H01L21/46 , H01L21/8232 , H01L29/24
CPC分类号： H01L21/76256 , H01L29/1608 , H01L29/78 , Y10S438/931
摘要： In a method for producing a semiconductor layer (8) of SiC of the 3C-polytype on top of a semiconductor substrate layer (6) the wafer-bonding technique is utilised. Two amorphous layers are placed face to face and bonded by heating them, and the piece so obtained is annealed at such a high temperature that the material of the amorphous layers is allowed to flow for relaxing a 3C-SiC-layer (4) on top thereof. A second layer (8) of 3C-SiC is after that epitaxially regrown on top of said relaxed 3C-SiC-layer.
摘要翻译： 在半导体衬底层（6）的顶上制造3C型多晶硅的SiC的半导体层（8）的方法，利用了晶片接合技术。 将两个非晶层面对面地放置并通过加热而接合，并且将如此获得的片材在如此高的温度下退火，使得非晶层的材料被允许流动以在顶部放松3C-SiC层（4） 其中。 之后，在所述松弛的3C-SiC层的顶部再外延生长3C-SiC的第二层（8）。
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公开(公告)号：US5743437A
公开(公告)日：1998-04-28
申请号：US272187
申请日：1994-07-08
申请人： David Moore , Christopher Harris
发明人： David Moore , Christopher Harris
CPC分类号： B65D41/3419 , B65D47/20 , B65D49/04 , B65D2101/0038 , Y02W30/807
摘要： A reusable closure for placement within the neck of a returnable and reusable container for liquid includes an improved sealing device for preventing contamination of the container. The sealing device achieves a tight seal between a ball and a valve seat within the closure. A cap abutment or spring may optionally be provided to further enhance the tightness of the seal.
摘要翻译： 用于放置在用于液体的可回收和可重复使用的容器的颈部内的可重复使用的封闭件包括用于防止容器污染的改进的密封装置。 密封装置在封闭件内实现球和阀座之间的紧密密封。 可以可选地设置盖接头或弹簧以进一步增强密封的密封性。
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公开(公告)号：US5698472A
公开(公告)日：1997-12-16
申请号：US612484
申请日：1996-03-07
申请人： Christopher Harris
发明人： Christopher Harris
CPC分类号： H01L21/049 , H01L21/045 , Y10S148/148 , Y10S438/931
摘要： The present invention is directed to a method and device for oxidation of a semiconductor layer of SiC at the surface thereof for forming an insulating surface layer of SiO.sub.2, in which the semiconductor layer is heated and oxygen is fed to the surface of the semiconductor layer for diffusing thereinto and reacting with the SiC in the surface layer while oxidating it to form SiO.sub.2 and C-oxides that diffuse out of the semiconductor layer, wherein the surface of the semiconductor layer is illuminated by vacuum ultraviolet light during at least a phase of the oxidation to improve the quality of the SiO.sub.2 layer formed.
摘要翻译： 本发明涉及用于在其表面氧化SiC的半导体层的方法和装置，用于形成SiO 2的绝缘表面层，其中半导体层被加热并且氧被馈送到半导体层的表面 扩散到表面层中并与表面层中的SiC反应，同时氧化它以形成扩散到半导体层之外的SiO 2和C氧化物，其中半导体层的表面在至少一个氧化阶段期间被真空紫外线照射 提高形成的SiO2层的质量。
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18.发明授权Semiconductor device with a low resistance ohmic contact between a metal layer and a sic-layer 失效具有在金属层和基层之间的低电阻欧姆接触的半导体器件
公开(公告)号：US5652437A
公开(公告)日：1997-07-29
申请号：US602045
申请日：1996-02-15
申请人： Christopher Harris
发明人： Christopher Harris
IPC分类号： H01L21/04 , H01L29/45 , H01L31/0312
CPC分类号： H01L21/0485 , H01L29/45
摘要： The present invention is a semiconductor device comprising a semiconductor layer of SiC, a metal layer adapted to form a low resistance ohmic contact with the SiC-layer and a thin layer of a material having a smaller bandgap than the SiC of the SiC-layer and is placed between the SiC-layer and the metal layer. The SiC-layer is highly doped at least in the region next to the thin layer, and the material of the thin layer is a Group 3B-nitride including indium and at least another Group 3B-element.
摘要翻译： 本发明是一种半导体器件，其包括SiC的半导体层，适于形成与SiC层的低电阻欧姆接触的金属层和具有比SiC层的SiC更小的带隙的材料的薄层，以及 放置在SiC层和金属层之间。 SiC层至少在薄层附近的区域中被高度掺杂，薄层的材料是包括铟和至少另一个3B族元素的第3B族氮化物。
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公开(公告)号：USD731442S1
公开(公告)日：2015-06-09
申请号：US29417624
申请日：2012-04-05
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公开(公告)号：US09032869B2
公开(公告)日：2015-05-19
申请号：US13435074
申请日：2012-03-30
CPC分类号： B65B13/06 , B30B9/3003 , B30B9/301 , B30B9/3071 , B65B27/12
摘要： In one aspect, the present invention contemplates a strapping station that integrates with a machine for wrapping and clamping a strap around a load, particularly a palletized load. The strapping station includes a transfer conveyor and a compression conveyor that is supported to be lowered onto the upper surface of a load to apply pressure to or compress the load during the strapping operation. The compression conveyor is maintained in that position, continuously applying pressure to the load, even as the load is moved for the application of straps at different locations.
摘要翻译： 在一个方面，本发明考虑了一种与机器集成的捆扎站，用于围绕负载，特别是码垛负载缠绕和夹紧带。 捆扎站包括传送输送机和压缩输送机，该输送机和压缩输送机被支撑以降低到负载的上表面上，以在捆扎操作期间施加压力或压缩载荷。 压缩输送机保持在该位置，连续地向负载施加压力，即使当负载被移动以在不同位置处施加带子时。
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