公开(公告)号：US06977196B1

公开(公告)日：2005-12-20

申请号：US10642969

申请日：2003-08-18

申请人： Darius L. Crenshaw ,  Stuart M. Jacobsen ,  David J. Seymour

发明人： Darius L. Crenshaw ,  Stuart M. Jacobsen ,  David J. Seymour

IPC分类号： H01C7/00 ,  H01H1/00 ,  H01H59/00 ,  H01L21/822 ,  H01L27/04 ,  H01P1/10 ,  H01L21/8234 ,  H01L21/8244

CPC分类号： H01H59/0009 ,  H01H1/0036 ,  Y10T29/435 ,  Y10T29/49004 ,  Y10T29/4902 ,  Y10T29/49071 ,  Y10T29/49117

摘要： The present invention provides a method and product-by-method of integrating a bias resistor in circuit with a bottom electrode of a micro-electromechanical switch on a silicon substrate. The resistor and bottom electrode are formed simultaneously by first sequentially depositing a layer of a resistor material (320), a hard mask material (330) and a metal material (340) on a silicon substrate forming a stack. The bottom electrode and resistor lengths are subsequently patterned and etched (350) followed by a second etching (360) process to remove the hard mask and metal materials from the defined resistor length. Finally, in a preferred embodiment, the bottom electrode and resistor structure is encapsulated with a layer of dielectric which is patterned and etched (370) to correspond to the defined bottom electrode and resistor.

摘要翻译： 本发明提供了一种将电路中的偏置电阻与硅基板上的微机电开关的底电极集成的方法和方法。 电阻器和底部电极通过首先在形成叠层的硅衬底上依次沉积电阻材料层（320），硬掩模材料（330）和金属材料（340）而同时形成。 随后对底部电极和电阻器长度进行图案化和蚀刻（350），随后进行第二蚀刻（360）处理，以从限定的电阻器长度去除硬掩模和金属材料。 最后，在一个优选实施例中，底部电极和电阻器结构用一层电介质封装，电介质层被图案化并蚀刻（370）以对应于限定的底部电极和电阻器。

公开(公告)号：US06764872B2

公开(公告)日：2004-07-20

申请号：US10255839

申请日：2002-09-27

申请人： Tsen-Hwang Lin ,  Yu-Pei Chen ,  Darius L. Crenshaw

发明人： Tsen-Hwang Lin ,  Yu-Pei Chen ,  Darius L. Crenshaw

IPC分类号： H01L2100

CPC分类号： B81C1/00182 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/04 ,  H01G5/16 ,  H01G5/40 ,  H01H59/0009 ,  H01P1/127

摘要： A microelectromechanical switch includes a substrate, an insulator layer disposed outwardly from the substrate, and an electrode disposed outwardly from the insulator layer. The switch also includes a dielectric layer disposed outwardly from the insulator layer and the electrode, the dielectric layer having a dielectric constant of greater than or equal to twenty. The switch also includes a membrane layer disposed outwardly from the dielectric layer, the membrane layer overlying a support layer, the support layer operable to space the membrane layer outwardly from the dielectric layer.

摘要翻译： 微机电开关包括衬底，从衬底向外设置的绝缘体层以及从绝缘体层向外设置的电极。 开关还包括从绝缘体层和电极向外设置的电介质层，电介质层的介电常数大于或等于二十。 所述开关还包括从所述电介质层向外设置的膜层，所述膜层覆盖在支撑层上，所述支撑层可操作以将所述膜层从所述电介质层向外空间。

公开(公告)号：US06197653B1

公开(公告)日：2001-03-06

申请号：US09049955

申请日：1998-03-27

申请人： Rajesh B. Khamankar ,  Darius L. Crenshaw ,  Rick L. Wise ,  Katherine Violette ,  Aditi D. Banerjee

发明人： Rajesh B. Khamankar ,  Darius L. Crenshaw ,  Rick L. Wise ,  Katherine Violette ,  Aditi D. Banerjee

IPC分类号： H01L2120

CPC分类号： H01L28/91 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/84

摘要： A rugged polysilicon electrode for a capacitor has high surface area enhancement with a thin layer by high nucleation density plus gas phase doping which also enhances grain shape and oxygen-free dielectric formation.

摘要翻译： 用于电容器的坚固的多晶硅电极具有高的表面积增强，薄层具有高成核密度加气相掺杂，这也增强了晶粒形状和无氧电介质形成。