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11.发明授权公开(公告)号：US10850306B2
公开(公告)日：2020-12-01
申请号：US15905289
申请日：2018-02-26
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Susan A. Alie , Joseph Lutsky , David Grosjean
Abstract: Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described.
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12.发明申请公开(公告)号：US20190164956A1
公开(公告)日：2019-05-30
申请号：US16197438
申请日：2018-11-21
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Nevada J. Sanchez , Susan A. Alie
IPC: H01L27/06 , H01L27/092 , H01L23/528 , H01L23/522 , H01L21/768 , B81C1/00 , B06B1/02 , H01L21/56 , H01L21/3213 , H01L21/8238 , A61B8/00 , B81B3/00 , B81B7/00
Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
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公开(公告)号：US10196261B2
公开(公告)日：2019-02-05
申请号：US15453846
申请日：2017-03-08
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston , Jaime Scott Zahorian
Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US20190000418A1
公开(公告)日：2019-01-03
申请号：US16112436
申请日：2018-08-24
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Nevada J. Sanchez , Tyler S. Ralston , Christopher Thomas McNulty , Jaime Scott Zahorian , Paul Francis Cristman , Matthew de Jonge , Keith G. Fife
Abstract: A system comprising a multi-modal ultrasound probe configured to operate in a plurality of operating modes associated with a respective plurality of configuration profiles; and a computing device coupled to the handheld multi-modal ultrasound probe and configured to, in response to receiving input indicating an operating mode selected by a user, cause the multi-modal ultrasound probe to operate in the selected operating mode.
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公开(公告)号：US20180364201A1
公开(公告)日：2018-12-20
申请号：US16109703
申请日：2018-08-22
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston
Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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Patent Agency Ranking
公开(公告)号：US20170315099A1
公开(公告)日：2017-11-02
申请号：US15648187
申请日：2017-07-12
Applicant: Butterfly Network Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston
CPC classification number: G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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17.发明授权Ultrasonic transducers in complementary metal oxide semiconductor (CMOS) wafers and related apparatus and methods 有权超声波换能器在互补金属氧化物半导体（CMOS）晶圆及相关设备和方法公开(公告)号：US09505030B2
公开(公告)日：2016-11-29
申请号：US14689119
申请日：2015-04-17
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Keith G. Fife , Nevada J. Sanchez , Susan A. Alie
IPC: B81B3/00 , B06B1/02 , B81B7/00 , B81C1/00 , H01L21/3213 , H01L21/56 , H01L21/768 , H01L21/8238 , H01L23/522 , H01L23/528 , H01L27/06 , A61B8/00 , H01L27/092
CPC classification number: H01L27/0617 , A61B8/00 , A61B8/4494 , B06B1/02 , B06B1/0292 , B06B2201/51 , B81B3/0021 , B81B7/0006 , B81B2201/0271 , B81C1/00158 , B81C1/00246 , B81C2203/0735 , B81C2203/0771 , H01L21/32134 , H01L21/56 , H01L21/768 , H01L21/76838 , H01L21/823871 , H01L23/5226 , H01L23/528 , H01L27/0688 , H01L27/092 , H01L2224/16225
Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
Abstract translation: 还描述了形成在互补金属氧化物半导体（CMOS）晶片中的微加工超声换能器，以及制造这种器件的方法。 可以通过牺牲释放去除CMOS晶片的金属化层，以产生超声换能器的空腔。 剩余的层可以形成超声换能器的膜。
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公开(公告)号：US20160009549A1
公开(公告)日：2016-01-14
申请号：US14716152
申请日：2015-05-19
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston
IPC: B81C1/00
CPC classification number: G01N29/2406 , A61B8/4483 , B06B1/0292 , B81B7/007 , B81B2201/0271 , B81C1/00238 , B81C1/00301 , B81C2201/019 , B81C2203/036 , B81C2203/0792 , H01L2224/4813 , H01L2924/0002 , H01L2924/146 , H01L2924/1461
Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.
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公开(公告)号：US10856840B2
公开(公告)日：2020-12-08
申请号：US15415434
申请日：2017-01-25
Applicant: Butterfly Network, Inc.
Inventor： Jonathan M. Rothberg , Susan A. Alie , Nevada J. Sanchez , Tyler S. Ralston , Christopher Thomas McNulty , Jaime Scott Zahorian , Paul Francis Cristman , Matthew de Jonge , Keith G. Fife
Abstract: A universal ultrasound device having an ultrasound includes a semiconductor die; a plurality of ultrasonic transducers integrated on the semiconductor die, the plurality of ultrasonic transducers configured to operate a first mode associated with a first frequency range and a second mode associated with a second frequency range, wherein the first frequency range is at least partially non-overlapping with the second frequency range; and control circuitry configured to: control the plurality of ultrasonic transducers to generate and/or detect ultrasound signals having frequencies in the first frequency range, in response to receiving an indication to operate the ultrasound probe in the first mode; and control the plurality of ultrasonic transducers to generate and/or detect ultrasound signals having frequencies in the second frequency range, in response to receiving an indication to operate the ultrasound probe in the second mode.
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20.发明授权公开(公告)号：US10512936B2
公开(公告)日：2019-12-24
申请号：US16012999
申请日：2018-06-20
Applicant: Butterfly Network, Inc.
Inventor： Susan A. Alie , Keith G. Fife , Joseph Lutsky , David Grosjean
Abstract: An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.
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