公开(公告)号：US09583695B2

公开(公告)日：2017-02-28

申请号：US14431125

申请日：2013-09-12

Applicant: CROCUS Technology SA

Inventor： Ioan Lucian Prejbeanu ,  Bernard Dieny ,  Kenneth MacKay ,  Bertrand Cambou

IPC: H01L43/02 ,  H03F15/00 ,  G11C11/16 ,  H03K19/18

CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/1675 ,  H03F15/00 ,  H03K19/18

Abstract: A magnetic logic unit (MLU) cell includes a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a tunnel barrier layer between the first and second layer. A field line for passing a field current such as to generate an external magnetic field is adapted to switch the first magnetization. The first magnetic layer is arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field. An MLU amplifier includes a plurality of the MLU cells. The MLU amplifier has large gains, extended cut off frequencies and improved linearity.

Abstract translation: 磁逻辑单元（MLU）单元包括第一磁性隧道结和第二磁性隧道结，每个磁性隧道结包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层，和 第一层和第二层。 用于传递场电流（例如产生外部磁场）的场线适于切换第一磁化。 第一磁性层布置成使得磁性隧道结磁化随所产生的外部磁场线性变化。 MLU放大器包括多个MLU单元。 MLU放大器具有很大的增益，延长了截止频率，提高了线性度。

公开(公告)号：US20150270001A1

公开(公告)日：2015-09-24

申请号：US14665459

申请日：2015-03-23

Applicant: Crocus Technology SA

Inventor： Bertrand Cambou

IPC: G11C15/02

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C15/02 ,  G11C15/046

Abstract: An MRAM cell including a first tunnel barrier layer between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization; a second tunnel barrier layer between the soft ferromagnetic layer and a second hard ferromagnetic layer having a second storage magnetization; the first storage magnetization being freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold; the first high predetermined temperature threshold being higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.

Abstract translation: MRAM单元包括具有自由磁化的软铁磁层和具有第一存储磁化的第一硬铁磁层之间的第一隧道势垒层; 所述软铁磁层与具有第二存储磁化的第二硬铁磁层之间的第二隧道势垒层; 所述第一存储磁化可在第一高预定温度阈值自由定向，并且所述第二存储磁化可自由地定向在第二预定高温阈值; 第一高预定温度阈值高于第二预定高温阈值。 MRAM单元可用作三元内容可寻址存储器（TCAM），并存储多达三个不同的状态级别。 MRAM电池具有减小的尺寸并且可以以低成本制造。