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公开(公告)号：US10663537B2
公开(公告)日：2020-05-26
申请号：US15481805
申请日：2017-04-07
Applicant: CROCUS Technology SA
Inventor： Jeffrey Childress , Romain Foissac , Kenneth MacKay
Abstract: A magnetic sensor cell including a magnetic tunnel junction including a reference layer having a reference magnetization oriented substantially parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. The sense layer includes an intrinsic anisotropy substantially perpendicular to the plane of the sense layer such that the sense magnetization is orientable between an initial direction perpendicular to the plane of the sense layer and a direction parallel to the plane of the sense layer; the intrinsic anisotropy having in anisotropy field being above 150 Oe.
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2.发明申请MAGNETIC LOGIC UNIT (MLU) CELL AND AMPLIFIER HAVING A LINEAR MAGNETIC SIGNAL 有权具有线性磁信号的磁性逻辑单元（MLU）单元和放大器公开(公告)号：US20150228888A1
公开(公告)日：2015-08-13
申请号：US14431125
申请日：2013-09-12
Applicant: CROCUS TECHNOLOGY SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
CPC classification number: H01L43/02 , G11C11/16 , G11C11/1675 , H03F15/00 , H03K19/18
Abstract: A magnetic logic unit (MLU) cell includes a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a tunnel barrier layer between the first and second layer. A field line for passing a field current such as to generate an external magnetic field is adapted to switch the first magnetization. The first magnetic layer is arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field. An MLU amplifier includes a plurality of the MLU cells. The MLU amplifier has large gains, extended cut off frequencies and improved linearity.
Abstract translation: 磁逻辑单元（MLU）单元包括第一磁性隧道结和第二磁性隧道结，每个磁性隧道结包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层，和 第一层和第二层。 用于传递场电流（例如产生外部磁场）的场线适于切换第一磁化。 第一磁性层布置成使得磁性隧道结磁化随所产生的外部磁场线性变化。 MLU放大器包括多个MLU单元。 MLU放大器具有很大的增益，延长了截止频率，提高了线性度。
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3.发明授权Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal 有权具有线性磁信号的磁逻辑单元（MLU）单元和放大器公开(公告)号：US09583695B2
公开(公告)日：2017-02-28
申请号：US14431125
申请日：2013-09-12
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
CPC classification number: H01L43/02 , G11C11/16 , G11C11/1675 , H03F15/00 , H03K19/18
Abstract: A magnetic logic unit (MLU) cell includes a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a tunnel barrier layer between the first and second layer. A field line for passing a field current such as to generate an external magnetic field is adapted to switch the first magnetization. The first magnetic layer is arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field. An MLU amplifier includes a plurality of the MLU cells. The MLU amplifier has large gains, extended cut off frequencies and improved linearity.
Abstract translation: 磁逻辑单元（MLU）单元包括第一磁性隧道结和第二磁性隧道结，每个磁性隧道结包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层，和 第一层和第二层。 用于传递场电流（例如产生外部磁场）的场线适于切换第一磁化。 第一磁性层布置成使得磁性隧道结磁化随所产生的外部磁场线性变化。 MLU放大器包括多个MLU单元。 MLU放大器具有很大的增益，延长了截止频率，提高了线性度。
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Patent Agency Ranking
公开(公告)号：US08797793B2
公开(公告)日：2014-08-05
申请号：US13761292
申请日：2013-02-07
Applicant: Crocus Technology SA
Inventor： Lucien Lombard , Kenneth MacKay , Ioan Lucian Prejbeanu
IPC: G11C11/15
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254
Abstract: The present disclosure concerns a self-referenced MRAM element, comprising a magnetic tunnel junction having a magnetoresistance, comprising: a storage layer having a storage magnetization that is pinned along a first direction when the magnetic tunnel junction is at a low temperature threshold; a sense layer having a sense magnetization; and a tunnel barrier layer included between the storage layer and the sense layer; and an aligning device arranged for providing the sense magnetization with a magnetic anisotropy along a second direction that is substantially perpendicular to the first direction such that the sense magnetization is adjusted about the second direction; the aligning device being further arranged such that, when a first read magnetic field is provided, a resistance variation range of the magnetic tunnel junction is at least about 20% of the magnetoresistance. The self-referenced MRAM cell can be read with an increased reliability and has reducing power consumption.
Abstract translation: 本公开涉及一种自参考MRAM元件，其包括具有磁阻的磁性隧道结，包括：当磁性隧道结处于低温阈值时具有沿着第一方向固定的存储磁化的存储层; 具有感测磁化的感测层; 以及包括在所述存储层和所述感测层之间的隧道势垒层; 以及对准装置，其布置成沿着基本上垂直于第一方向的第二方向提供具有磁各向异性的感测磁化，使得感测磁化围绕第二方向被调节; 对准装置还被布置成使得当提供第一读取磁场时，磁性隧道结的电阻变化范围为磁阻的至少约20％。 可以以增加的可靠性读取自引用的MRAM单元并且具有降低的功耗。
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公开(公告)号：US20130201756A1
公开(公告)日：2013-08-08
申请号：US13761292
申请日：2013-02-07
Applicant: Crocus Technology SA
Inventor： Lucien Lombard , Kenneth MacKay , Ioan Lucian Prejbeanu
IPC: H01L43/02
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3254
Abstract: The present disclosure concerns a self-referenced MRAM element, comprising a magnetic tunnel junction having a magnetoresistance, comprising: a storage layer having a storage magnetization that is pinned along a first direction when the magnetic tunnel junction is at a low temperature threshold; a sense layer having a sense magnetization; and a tunnel barrier layer included between the storage layer and the sense layer; and an aligning device arranged for providing the sense magnetization with a magnetic anisotropy along a second direction that is substantially perpendicular to the first direction such that the sense magnetization is adjusted about the second direction; the aligning device being further arranged such that, when a first read magnetic field is provided, a resistance variation range of the magnetic tunnel junction is at least about 20% of the magnetoresistance. The self-referenced MRAM cell can be read with an increased reliability and has reducing power consumption.
Abstract translation: 本公开涉及一种自参考MRAM元件，其包括具有磁阻的磁性隧道结，包括：当磁性隧道结处于低温阈值时具有沿着第一方向固定的存储磁化的存储层; 具有感测磁化的感测层; 以及包括在所述存储层和所述感测层之间的隧道势垒层; 以及对准装置，其布置成沿着基本上垂直于第一方向的第二方向提供具有磁各向异性的感测磁化，使得感测磁化围绕第二方向被调节; 对准装置还被布置成使得当提供第一读取磁场时，磁性隧道结的电阻变化范围为磁阻的至少约20％。 可以以增加的可靠性读取自引用的MRAM单元并且具有降低的功耗。
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公开(公告)号：US20180292473A1
公开(公告)日：2018-10-11
申请号：US15481805
申请日：2017-04-07
Applicant: CROCUS Technology SA
Inventor： Jeffrey Childress , Romain Foissac , Kenneth MacKay
Abstract: A magnetic sensor cell including a magnetic tunnel junction including a reference layer having a reference magnetization oriented substantially parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. The sense layer includes an intrinsic anisotropy substantially perpendicular to the plane of the sense layer such that the sense magnetization is orientable between an initial direction perpendicular to the plane of the sense layer and a direction parallel to the plane of the sense layer; the intrinsic anisotropy having in anisotropy field being above 150 Oe.
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7.发明授权Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal 有权具有线性磁信号的磁逻辑单元（MLU）单元和放大器公开(公告)号：US09324936B2
公开(公告)日：2016-04-26
申请号：US14431140
申请日：2013-09-12
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
Abstract: A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.
Abstract translation: 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。
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8.发明申请MAGNETIC LOGIC UNIT (MLU) CELL AND AMPLIFIER HAVING A LINEAR MAGNETIC SIGNAL 有权具有线性磁信号的磁性逻辑单元（MLU）单元和放大器公开(公告)号：US20150270479A1
公开(公告)日：2015-09-24
申请号：US14431140
申请日：2013-09-12
Applicant: CROCUS TECHNOLOGY SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
Abstract: A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.
Abstract translation: 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。
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