公开(公告)号：US10712399B2

公开(公告)日：2020-07-14

申请号：US15527766

申请日：2015-11-18

Applicant: CROCUS Technology SA

Inventor： Sebastien Bandiera

IPC: G01R33/00 ,  G01R33/09

Abstract: A MLU cell for sensing an external magnetic field, including a magnetic tunnel junction including a sense layer having a sense magnetization adapted to be oriented by the external magnetic field; a reference layer having a reference magnetization; a tunnel barrier layer; a biasing layer having a biasing magnetization and a biasing antiferromagnetic layer pinning the biasing magnetization substantially parallel to the pinned reference magnetization at a low threshold temperature and freeing it at a high threshold temperature. A biasing coupling layer is between the sense layer and the basing layer and configured for magnetically coupling the biasing layer and the sense layer such that the sense magnetization is oriented substantially perpendicular to the pinned biasing magnetization and to the pinned reference magnetization. The present disclosure further concerns a magnetic sensor device for sensing an external magnetic field, including a plurality of the MLU cells.

公开(公告)号：US10665774B2

公开(公告)日：2020-05-26

申请号：US16083163

申请日：2017-03-06

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera

IPC: G11C11/00 ,  H01L43/08 ,  H01L43/12 ,  H01F10/32

Abstract: A magnetoresistive element including: a storage layer having a first storage magnetostriction; a sense layer having a first sense magnetostriction; and a barrier layer between and in contact with the storage and sense layer. The magnetoresistive element also includes a compensating ferromagnetic layer having a second magnetostriction different from the first storage magnetostriction and/or sense magnetostriction, and adapted to compensate the first storage magnetostriction and/or the first sense magnetostriction so that a net magnetostriction of the storage layer and/or sense layer is adjustable between −10 ppm and +10 ppm or more negative than −10 ppm by adjusting a thickness of the compensating ferromagnetic layer. The present disclosure also concerns a magnetic device comprising the magnetoresistive element.

公开(公告)号：US09431601B2

公开(公告)日：2016-08-30

申请号：US14647632

申请日：2013-11-19

Applicant: CROCUS Technology SA

Inventor： Sebastien Bandiera ,  Ioan Lucian Prejbeanu

IPC: H01L27/22 ,  H01L43/12 ,  H01L29/82 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01F10/3254 ,  H01F41/303 ,  H01L43/02

Abstract: Magnetic element including a first magnetic layer having a first magnetization; a second magnetic layer having a second magnetization; a tunnel barrier layer between the first and the second magnetic layers; and an antiferromagnetic layer exchanged coupling the second magnetic layer such that the second magnetization is pinned below a critical temperature of the antiferromagnetic layer, and can be freely varied when the antiferromagnetic layer is heated above that critical temperature. The magnetic element also includes an oxygen gettering layer between the second magnetic layer and the antiferromagnetic layer, or within the second magnetic layer. The magnetic element has reduced insertion of oxygen atoms in the antiferromagnetic layer and possibly reduced diffusion of manganese in the second magnetic layer resulting in an enhanced exchange bias and/or enhanced resistance to temperature cycles and improved life-time.

Abstract translation: 磁性元件包括具有第一磁化的第一磁性层; 具有第二磁化强度的第二磁性层; 第一和第二磁性层之间的隧道势垒层; 并且反铁磁层交换耦合第二磁性层，使得第二磁化被固定在反铁磁层的临界温度以下，并且当反铁磁层被加热到高于该临界温度时，可以自由地改变。 磁性元件还包括在第二磁性层和反铁磁性层之间或在第二磁性层内的氧吸气层。 磁性元件减少了反铁磁层中的氧原子的插入，并且可能减少了第二磁性层中的锰的扩散，导致增强的交换偏压和/或增强的耐温度循环和改善的寿命。

公开(公告)号：US10330749B2

公开(公告)日：2019-06-25

申请号：US15543619

申请日：2015-12-23

Applicant: CROCUS Technology SA

Inventor： Sebastien Bandiera

IPC: G01R33/09 ,  G01D5/16 ,  G01R33/00 ,  G11C11/16

Abstract: A magnetic logic unit (MLU) cell for sensing magnetic fields, including: a magnetic tunnel junction including a storage layer having a storage magnetization, a sense layer having a sense magnetization; a tunnel barrier layer between the storage layer and the sense layer; and a pinning layer pinning the storage magnetization at a low threshold temperature and freeing it at a high threshold temperature. The sense magnetization is freely alignable at the low and high threshold temperatures and the storage layer induces an exchange bias field magnetically coupling the sense layer such that the sense magnetization tends to be aligned antiparallel or parallel to the storage magnetization. The tunnel barrier layer is configured for generating an indirect exchange coupling between the tunnel barrier layer and the sense layer providing an additional exchange bias field.

公开(公告)号：US20160240773A1

公开(公告)日：2016-08-18

申请号：US15141180

申请日：2016-04-28

Applicant: International Business Machines Coporation ,  Crocus Technology, SA

Inventor： Anthony J. Annunziata ,  Sebastien Bandiera ,  Lucien Lombard ,  Lucian Prejbeanu ,  Philip L. Trouilloud ,  Daniel C. Worledge

IPC: H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  H01L43/08 ,  H01L43/10

Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing. A tunnel barrier is disposed adjacent to a ferromagnetic sense layer and a ferromagnetic storage layer, such that the tunnel barrier is sandwiched between the ferromagnetic sense layer and the ferromagnetic storage layer. An antiferromagnetic pinning layer is disposed adjacent to the ferromagnetic storage layer. The pinning layer pins a magnetic moment of the storage layer until heating is applied. The storage layer includes a non-magnetic material to reduce a storage layer magnetization as compared to not having the non-magnetic material. The sense layer includes the non-magnetic material to reduce a sense layer magnetization as compared to not having the non-magnetic material. A reduction in the storage layer magnetization and sense layer magnetization reduces the magnetostatic interaction between the storage layer and sense layer, resulting in less read/write power.

公开(公告)号：US20160238676A1

公开(公告)日：2016-08-18

申请号：US15028114

申请日：2014-10-01

Applicant: Crocus Technology SA

Inventor： Sebastien Bandiera

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: A magnetic sensor cell includes a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A magnetic device is configured for providing a sense magnetic field for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The magnetic sensor cell can be used for sensing an external magnetic field including a component oriented parallel to the plane of the sense layer and a component oriented perpendicular to the plane of the sense layer.

Abstract translation: 磁传感器单元包括磁隧道结，其包括具有平行于参考层的平面的参考磁化的参考层，具有感测磁化的感测层以及感测层和参考层之间的隧道势垒层。 磁性装置被配置为提供用于对准感测磁化的感测磁场。 当提供感测磁场时，感测层磁化在平行于感测层的平面的方向和垂直于感测层的平面的方向之间定向。 磁传感器单元可用于感测包括平行于感测层的平面的部件和垂直于感测层的平面定向的部件的外部磁场。

公开(公告)号：US20160079516A1

公开(公告)日：2016-03-17

申请号：US14787957

申请日：2014-04-11

Applicant: CROCUS TECHNOLOGY SA

Inventor： Sebastien Bandiera ,  Ioan Lucian Prejbeanu

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10

Abstract: MRAM cell including a magnetic tunnel junction including a reference layer, a storage layer having a storage magnetization, a tunnel barrier layer between the reference and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and free it at a high temperature threshold. The storage layer includes a first ferromagnetic layer in contact with the tunnel barrier layer, a second ferromagnetic layer in contact with the antiferromagnetic layer, and a low saturation magnetization storage layer including a ferromagnetic material and a non-magnetic material. The MRAM cell can be written with improved reliability.

Abstract translation: MRAM单元包括包括参考层的磁性隧道结，具有存储磁化的存储层，在参考和存储层之间的隧道势垒层; 以及反铁磁层将存储层交换耦合，例如以低温阈值来引导存储磁化，并将其在高温阈值下释放。 存储层包括与隧道势垒层接触的第一铁磁层，与反铁磁层接触的第二铁磁层和包含铁磁材料和非磁性材料的低饱和磁化存储层。 可以改善MRAM单元的可靠性。

公开(公告)号：US20150340597A1

公开(公告)日：2015-11-26

申请号：US14647632

申请日：2013-11-19

Applicant: CROCUS Technology SA

Inventor： Sebastien Bandiera ,  Ioan Lucian Prejbeanu

IPC: H01L43/08 ,  H01L43/02

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01F10/3254 ,  H01F41/303 ,  H01L43/02

Abstract: Magnetic element including a first magnetic layer having a first magnetization; a second magnetic layer having a second magnetization; a tunnel barrier layer between the first and the second magnetic layers; and an antiferromagnetic layer exchanged coupling the second magnetic layer such that the second magnetization is pinned below a critical temperature of the antiferromagnetic layer, and can be freely varied when the antiferromagnetic layer is heated above that critical temperature. The magnetic element also includes an oxygen gettering layer between the second magnetic layer and the antiferromagnetic layer, or within the second magnetic layer. The magnetic element has reduced insertion of oxygen atoms in the antiferromagnetic layer and possibly reduced diffusion of manganese in the second magnetic layer resulting in an enhanced exchange bias and/or enhanced resistance to temperature cycles and improved life-time.

Abstract translation: 磁性元件包括具有第一磁化的第一磁性层; 具有第二磁化强度的第二磁性层; 第一和第二磁性层之间的隧道势垒层; 并且反铁磁层交换耦合第二磁性层，使得第二磁化被固定在反铁磁层的临界温度以下，并且当反铁磁层被加热到高于该临界温度时，可以自由地改变。 磁性元件还包括在第二磁性层和反铁磁性层之间或在第二磁性层内的氧吸气层。 磁性元件减少了反铁磁层中的氧原子的插入，并且可能减少了第二磁性层中的锰的扩散，导致增强的交换偏压和/或增强的耐温度循环和改善的寿命。