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19 条记录 (耗时 0.018 秒)

    SOLID-STATE IMAGING DEVICE AND IMAGE CAPTURING SYSTEM
    11.
    发明申请
    SOLID-STATE IMAGING DEVICE AND IMAGE CAPTURING SYSTEM 有权
    固态成像装置和图像捕获系统

    公开(公告)号：US20140091378A1

    公开(公告)日：2014-04-03

    申请号：US14038468

    申请日：2013-09-26

    申请人： CANON KABUSHIKI KAISHA

    发明人： Kouhei Hashimoto

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14623 ,  H01L27/14609

    摘要： A solid-state imaging device includes a photoelectric converting portion including a first semiconductor region capable of accumulating a signal charge, a second semiconductor region of the same conductivity type as the first semiconductor region, a gate electrode provided between the first and second semiconductor regions, and an insulating layer provided on the first semiconductor region, the second semiconductor region, and the gate electrode. The solid-state imaging device further includes a first light-shielding portion including a metal portion provided in an opening or a trench of the insulating layer between the first and second semiconductor regions, and a second light-shielding portion including a metal portion provided on the insulating layer on the second semiconductor region.

    摘要翻译： 固态成像装置包括光电转换部分，其包括能够积累信号电荷的第一半导体区域，与第一半导体区域相同的导电类型的第二半导体区域，设置在第一和第二半导体区域之间的栅电极， 以及设置在第一半导体区域，第二半导体区域和栅极电极上的绝缘层。 固态成像装置还包括第一遮光部分，其包括设置在第一和第二半导体区域之间的绝缘层的开口或沟槽中的金属部分和包括设置在第一和第二半导体区域上的金属部分的第二遮光部分 第二半导体区域上的绝缘层。

    Solid-state imaging device and image capturing system
    14.
    发明授权
    Solid-state imaging device and image capturing system 有权
    固态成像装置和图像捕获系统

    公开(公告)号：US08981439B2

    公开(公告)日：2015-03-17

    申请号：US14038468

    申请日：2013-09-26

    申请人： Canon Kabushiki Kaisha

    发明人： Kouhei Hashimoto

    IPC分类号： H01L31/062 ,  H01L27/146

    CPC分类号： H01L27/14623 ,  H01L27/14609

    摘要： A solid-state imaging device includes a photoelectric converting portion including a first semiconductor region capable of accumulating a signal charge, a second semiconductor region of the same conductivity type as the first semiconductor region, a gate electrode provided between the first and second semiconductor regions, and an insulating layer provided on the first semiconductor region, the second semiconductor region, and the gate electrode. The solid-state imaging device further includes a first light-shielding portion including a metal portion provided in an opening or a trench of the insulating layer between the first and second semiconductor regions, and a second light-shielding portion including a metal portion provided on the insulating layer on the second semiconductor region.

    摘要翻译： 固态成像装置包括光电转换部分，其包括能够积累信号电荷的第一半导体区域，与第一半导体区域相同的导电类型的第二半导体区域，设置在第一和第二半导体区域之间的栅电极， 以及设置在第一半导体区域，第二半导体区域和栅极电极上的绝缘层。 固态成像装置还包括第一遮光部分，其包括设置在第一和第二半导体区域之间的绝缘层的开口或沟槽中的金属部分和包括设置在第一和第二半导体区域上的金属部分的第二遮光部分 第二半导体区域上的绝缘层。

    SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP DEVICE, AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE
    17.
    发明申请
    SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP DEVICE, AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE 审中-公开
    固态图像拾取装置，使用固态图像拾取装置的图像拾取系统，以及制造固态图像拾取装置的方法

    公开(公告)号：US20170005127A1

    公开(公告)日：2017-01-05

    申请号：US15264403

    申请日：2016-09-13

    申请人： CANON KABUSHIKI KAISHA

    发明人： Aiko Kato ,  Kouhei Hashimoto ,  Seiichi Tamura

    IPC分类号： H01L27/146 ,  H04N5/357

    CPC分类号： H01L27/14623 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14656 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/357

    摘要： In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.

    摘要翻译： 在包括光电转换部分，载体保持部分和多个晶体管的像素的固态图像拾取装置中，固态图像拾取装置还包括设置在光电转换部分上的第一绝缘膜， 载流子保持部和所述多个晶体管，布置在所述第一绝缘膜的开口中并且被定位成连接到所述多个晶体管中的一个或多个的源极或漏极的导体，以及设置在所述多个晶体管中的光屏蔽膜 开口或第一绝缘膜的凹部并且定位在载体保持部分上方。

    Method for manufacturing solid-state image pickup device
    19.
    发明授权
    Method for manufacturing solid-state image pickup device 有权
    固体摄像装置的制造方法

    公开(公告)号：US09018722B2

    公开(公告)日：2015-04-28

    申请号：US14018679

    申请日：2013-09-05

    申请人： Canon Kabushiki Kaisha

    发明人： Kouhei Hashimoto ,  Masatsugu Itahashi

    IPC分类号： H01L31/00 ,  H01L31/0232 ,  H01L31/02 ,  H01L31/18 ,  H01L27/146

    CPC分类号： H01L31/02 ,  H01L27/14623 ,  H01L27/14674 ,  H01L31/18

    摘要： A method for manufacturing a solid-state image pickup device that includes a pixel portion and a peripheral circuit portion, includes: forming a first insulating film in the pixel portion and the peripheral circuit portion, forming a second insulating film above the first insulating film, etching the second insulating film in photoelectric conversion elements, forming a metal film on the etched second insulating film in the photoelectric conversion elements and on the second insulating film in the peripheral circuit portion, and removing the metal film in the peripheral circuit portion and forming light-shielding films from the metal film in the photoelectric conversion elements.

    摘要翻译： 一种制造包括像素部分和外围电路部分的固态图像拾取装置的方法，包括：在像素部分和外围电路部分中形成第一绝缘膜，在第一绝缘膜上形成第二绝缘膜， 蚀刻光电转换元件中的第二绝缘膜，在光电转换元件中的蚀刻后的第二绝缘膜上形成金属膜，并在外围电路部分上形成第二绝缘膜，并且除去外围电路部分中的金属膜并形成光 来自光电转换元件中的金属膜的屏蔽膜。