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    Solid-state image sensor
    2.
    发明授权
    Solid-state image sensor 有权

    公开(公告)号：US09681078B2

    公开(公告)日：2017-06-13

    申请号：US15007579

    申请日：2016-01-27

    申请人： CANON KABUSHIKI KAISHA

    发明人： Masayuki Tsuchiya ,  Kouhei Hashimoto ,  Yasushi Nakata ,  Takehiko Soda

    IPC分类号： H04N5/335 ,  H01L27/148 ,  H01L27/00 ,  H04N5/372 ,  H01L27/146

    CPC分类号： H04N5/372 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

    摘要： An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.

    METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE
    3.
    发明申请
    METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE 审中-公开
    制造固态图像拾取器件的方法

    公开(公告)号：US20140008748A1

    公开(公告)日：2014-01-09

    申请号：US14018679

    申请日：2013-09-05

    申请人： Canon Kabushiki Kaisha

    发明人： Kouhei Hashimoto ,  Masatsugu Itahashi

    IPC分类号： H01L31/02 ,  H01L31/18

    CPC分类号： H01L31/02 ,  H01L27/14623 ,  H01L27/14674 ,  H01L31/18

    摘要： A method for manufacturing a solid-state image pickup device that includes a pixel portion and a peripheral circuit portion, includes: forming a first insulating film in the pixel portion and the peripheral circuit portion, forming a second insulating film above the first insulating film, etching the second insulating film in photoelectric conversion elements, forming a metal film on the etched second insulating film in the photoelectric conversion elements and on the second insulating film in the peripheral circuit portion, and removing the metal film in the peripheral circuit portion and forming light-shielding films from the metal film in the photoelectric conversion elements.

    摘要翻译： 一种制造包括像素部分和外围电路部分的固态图像拾取装置的方法，包括：在像素部分和外围电路部分中形成第一绝缘膜，在第一绝缘膜上形成第二绝缘膜， 蚀刻光电转换元件中的第二绝缘膜，在光电转换元件中蚀刻的第二绝缘膜上形成金属膜，并在外围电路部分中的第二绝缘膜上形成金属膜，并且除去外围电路部分中的金属膜并形成光 来自光电转换元件中的金属膜的屏蔽膜。

    SOLID-STATE IMAGE SENSOR
    6.
    发明申请
    SOLID-STATE IMAGE SENSOR 有权
    固态图像传感器

    公开(公告)号：US20160234409A1

    公开(公告)日：2016-08-11

    申请号：US15007579

    申请日：2016-01-27

    申请人： CANON KABUSHIKI KAISHA

    发明人： Masayuki Tsuchiya ,  Kouhei Hashimoto ,  Yasushi Nakata ,  Takehiko Soda

    IPC分类号： H04N5/225 ,  H04N5/372 ,  H01L27/146

    CPC分类号： H04N5/372 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

    摘要： An image sensor includes charge accumulation region of first conductivity type, floating diffusion of the first conductivity type, stacked semiconductor region having first region of second conductivity type arranged below the charge accumulation region, second region of the second conductivity type arranged above the first region, and third region of the second conductivity type arranged above the second region. The sensor further includes fourth region of the second conductivity type arranged in region between the charge accumulation region and the floating diffusion, below the floating diffusion, and above the stacked semiconductor region, transfer gate for transferring charges of the charge accumulation region to the floating diffusion, and fifth region of the second conductivity type arranged in region below the charge accumulation region and the fourth region, and above the stacked semiconductor region.

    摘要翻译： 图像传感器包括第一导电类型的电荷累积区域，第一导电类型的浮动扩散，布置在电荷累积区域下方的具有第二导电类型的第一区域的堆叠半导体区域，布置在第一区域上方的第二导电类型的第二区域， 以及布置在第二区域上方的第二导电类型的第三区域。 传感器还包括布置在电荷累积区域和浮动扩散区域之间的区域中的第二导电类型的第四区域，位于浮动扩散区之下和堆叠半导体区域之上，用于将电荷累积区域的电荷转移到浮动扩散区的传输栅极 和第二导电类型的第五区域布置在电荷累积区域和第四区域下方以及堆叠的半导体区域之上的区域中。

    SOLID-STATE IMAGE SENSOR AND CAMERA
    7.
    发明申请
    SOLID-STATE IMAGE SENSOR AND CAMERA 有权
    固态图像传感器和摄像机

    公开(公告)号：US20160218127A1

    公开(公告)日：2016-07-28

    申请号：US14996774

    申请日：2016-01-15

    申请人： CANON KABUSHIKI KAISHA

    发明人： Taro Kato ,  Jun Iba ,  Koichiro Iwata ,  Hiroo Akabori ,  Shota Shigemori ,  Kouhei Hashimoto

    IPC分类号： H01L27/146 ,  H04N5/378

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14643 ,  H04N5/378

    摘要： A solid-state image sensor includes a plurality of pixels for focus detection, each of the pixels including a photoelectric converter arranged in a semiconductor substrate, a microlens, and a light blocking portion arranged between the semiconductor substrate and the microlens to cover part of the photoelectric converter. A face in the pixel, which is parallel to a surface of the semiconductor substrate and on which the light blocking portion is arranged, includes a first opening and a second opening in addition to the light blocking portion. The light blocking portion includes a separator that has a light blocking property and is arranged between the first opening and the second opening. The second opening is larger in area than the first opening, and the light blocking portion is larger in area than the first opening.

    摘要翻译： 固态图像传感器包括用于焦点检测的多个像素，每个像素包括布置在半导体衬底中的光电转换器，微透镜和布置在半导体衬底和微透镜之间的遮光部分，以覆盖部分 光电转换器。 像素中的与半导体衬底的表面平行并且配置有遮光部分的面包括除了遮光部分之外的第一开口和第二开口。 遮光部分包括具有阻光性的隔板，并且布置在第一开口和第二开口之间。 第二开口的面积比第一开口大，遮光部的面积比第一开口的面积大。

    SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP DEVICE, AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE
    10.
    发明申请
    SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP DEVICE, AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE 审中-公开
    固态图像拾取装置，使用固态图像拾取装置的图像拾取系统，以及制造固态图像拾取装置的方法

    公开(公告)号：US20160086992A1

    公开(公告)日：2016-03-24

    申请号：US14957352

    申请日：2015-12-02

    申请人： CANON KABUSHIKI KAISHA

    发明人： Aiko Kato ,  Kouhei Hashimoto ,  Seiichi Tamura

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14623 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14656 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/357

    摘要： In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.

    摘要翻译： 在包括光电转换部分，载体保持部分和多个晶体管的像素的固态图像拾取装置中，固态图像拾取装置还包括设置在光电转换部分上的第一绝缘膜， 载流子保持部和所述多个晶体管，布置在所述第一绝缘膜的开口中并且被定位成连接到所述多个晶体管中的一个或多个的源极或漏极的导体，以及设置在所述多个晶体管中的光屏蔽膜 开口或第一绝缘膜的凹部并且定位在载体保持部分上方。