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公开(公告)号：US10312283B2
公开(公告)日：2019-06-04
申请号：US16026968
申请日：2018-07-03
发明人： Aiko Kato , Shingo Kitamura , Takehiro Toyoda , Hiroaki Naruse
IPC分类号： H01L27/146
摘要： An imaging device includes a pixel circuit region that includes a plurality of pixel circuits arranged in an array therein and a plurality of light guide portions. The imaging device also includes a peripheral circuit region that is positioned at a periphery of the pixel circuit region and includes a peripheral circuit. The imaging device also includes an intermediate region that is positioned between the pixel circuit region and the peripheral circuit region, forms a boundary with the pixel circuit region and the peripheral circuit region, and includes a plurality of dummy light guide portions and a plurality of contacts through which a reference potential of the plurality of pixel circuits is supplied.
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公开(公告)号：US20180331145A1
公开(公告)日：2018-11-15
申请号：US16026968
申请日：2018-07-03
发明人： Aiko Kato , Shingo Kitamura , Takehiro Toyoda , Hiroaki Naruse
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14623 , H01L27/14627 , H01L27/14629
摘要： An imaging device includes a pixel circuit region that includes a plurality of pixel circuits arranged in an array therein and a plurality of light guide portions. The imaging device also includes a peripheral circuit region that is positioned at a periphery of the pixel circuit region and includes a peripheral circuit. The imaging device also includes an intermediate region that is positioned between the pixel circuit region and the peripheral circuit region, forms a boundary with the pixel circuit region and the peripheral circuit region, and includes a plurality of dummy light guide portions and a plurality of contacts through which a reference potential of the plurality of pixel circuits is supplied.
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3.发明授权Method for manufacturing electronic device by forming a hole in a multilayer insulator film by plasma etching 有权通过等离子体蚀刻在多层绝缘体膜中形成孔来制造电子器件的方法公开(公告)号：US09530664B2
公开(公告)日：2016-12-27
申请号：US14300096
申请日：2014-06-09
发明人： Shingo Kitamura , Aiko Kato
IPC分类号： H01L21/31 , H01L21/311 , H01L27/146 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/76804 , H01L21/76898 , H01L27/14623 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14636 , H01L27/14685 , H01L27/14687
摘要： A method includes the stage of partially removing a first insulator layer to form an opening passing through the first insulator layer by plasma etching using a gas of a first type, and the stage of partially removing a second insulator layer to form an opening passing through the second insulator layer by plasma etching using a gas of a second type. The gas of a first type contains a first component capable of etching the first insulator layer, and a gas of the second type contains a second component different from the first component, capable of etching the second insulator layer and a third component having a higher deposition ability than the second component.
摘要翻译： 一种方法包括通过使用第一类型的气体的等离子体蚀刻部分地去除第一绝缘体层以形成通过第一绝缘体层的开口的阶段，以及部分地去除第二绝缘体层以形成通过 第二绝缘体层，其通过使用第二类型的气体的等离子体蚀刻。 第一类型的气体包含能够蚀刻第一绝缘体层的第一部件，并且第二类型的气体包含不同于第一部件的第二部件，能够蚀刻第二绝缘体层和具有较高沉积的第三部件 能力比第二个组件。
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4.发明申请SOLID-STATE IMAGE PICKUP DEVICE, IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP DEVICE, AND METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE 审中-公开固态图像拾取装置，使用固态图像拾取装置的图像拾取系统，以及制造固态图像拾取装置的方法公开(公告)号：US20160086992A1
公开(公告)日：2016-03-24
申请号：US14957352
申请日：2015-12-02
发明人： Aiko Kato , Kouhei Hashimoto , Seiichi Tamura
IPC分类号： H01L27/146
CPC分类号： H01L27/14623 , H01L27/14612 , H01L27/1463 , H01L27/14636 , H01L27/14656 , H01L27/14685 , H01L27/14689 , H04N5/357
摘要： In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.
摘要翻译： 在包括光电转换部分，载体保持部分和多个晶体管的像素的固态图像拾取装置中，固态图像拾取装置还包括设置在光电转换部分上的第一绝缘膜， 载流子保持部和所述多个晶体管，布置在所述第一绝缘膜的开口中并且被定位成连接到所述多个晶体管中的一个或多个的源极或漏极的导体，以及设置在所述多个晶体管中的光屏蔽膜 开口或第一绝缘膜的凹部并且定位在载体保持部分上方。
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公开(公告)号：US20190035840A1
公开(公告)日：2019-01-31
申请号：US16150033
申请日：2018-10-02
发明人： Aiko Kato , Kouhei Hashimoto , Seiichi Tamura
IPC分类号： H01L27/146 , H04N5/357
摘要： In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.
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公开(公告)号：US20180182802A1
公开(公告)日：2018-06-28
申请号：US15849229
申请日：2017-12-20
发明人： Tsutomu Tange , Yukinobu Suzuki , Aiko Kato , Koji Hara , Takehito Okabe
IPC分类号： H01L27/146 , H01L23/522 , H01L23/532 , H01L21/768
CPC分类号： H01L27/14636 , H01L21/28518 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76877 , H01L23/485 , H01L27/14612 , H01L27/14685 , H01L29/0847 , H01L29/78
摘要： A semiconductor apparatus includes a silicon layer including first and second semiconductor regions; an insulator film, on the silicon layer, having first and second holes positioned on the first and second semiconductor regions; a first metal portion containing a first metal element in the first hole; a first conductor portion containing a second metal element between the first metal portion and the first semiconductor region; a first silicide region containing the second metal element between the first conductor portion and the first semiconductor region; a second metal portion containing the first metal element in the second hole; a second conductor portion containing the second metal element between the second metal portion and the second semiconductor region; and a second silicide region containing a third metal element between the second conductor portion and the second semiconductor region, wherein the first conductor portion thickness is greater than the second conductor portion thickness.
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公开(公告)号：US20150097998A1
公开(公告)日：2015-04-09
申请号：US14506416
申请日：2014-10-03
发明人： Aiko Kato , Shingo Kitamura , Takehiro Toyoda , Hiroaki Naruse
IPC分类号： H04N5/374
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14623 , H01L27/14627 , H01L27/14629
摘要： An imaging device includes a pixel circuit region that includes a plurality of pixel circuits arranged in an array therein and a plurality of light guide portions. The imaging device also includes a peripheral circuit region that is positioned at a periphery of the pixel circuit region and includes a peripheral circuit. The imaging device also includes an intermediate region that is positioned between the pixel circuit region and the peripheral circuit region, forms a boundary with the pixel circuit region and the peripheral circuit region, and includes a plurality of dummy light guide portions and a plurality of contacts through which a reference potential of the plurality of pixel circuits is supplied.
摘要翻译： 一种成像装置包括像素电路区域，其包括排列成阵列的多个像素电路和多个导光部分。 成像装置还包括位于像素电路区域的外围并包括外围电路的外围电路区域。 成像装置还包括位于像素电路区域和外围电路区域之间的中间区域，与像素电路区域和外围电路区域形成边界，并且包括多个虚拟导光部分和多个触点 提供多个像素电路的参考电位。
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8.发明授权Method for manufacturing semiconductor device and method for manufacturing solid state image sensor using multiple insulation films 有权用于制造半导体器件的方法和使用多个绝缘膜制造固态图像传感器的方法公开(公告)号：US08802478B2
公开(公告)日：2014-08-12
申请号：US13626525
申请日：2012-09-25
发明人： Aiko Kato , Takehito Okabe
IPC分类号： H01L31/18 , H01L27/146 , H01L21/311 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/02 , H01L23/48 , H01L21/285
CPC分类号： H01L21/76802 , H01L21/02164 , H01L21/0217 , H01L21/28518 , H01L21/31111 , H01L21/76897 , H01L23/481 , H01L27/14609 , H01L27/14621 , H01L27/14636 , H01L27/14645 , H01L27/14683 , H01L27/14689 , H01L31/18 , H01L2924/0002 , H01L2924/00
摘要： Manufacturing a semiconductor device includes preparing a structure including a semiconductor substrate having a first region and a second region, a first insulating film arranged on the first region, a second insulating film arranged on the first insulating film, a third insulating film arranged on the second insulating film, a fourth insulating film arranged on the second region, a fifth insulating film arranged on the fourth insulating film, and a sixth insulating film arranged on the fifth insulating film, etching the second insulating film and the first insulating film under different etching conditions after etching the third insulating film, and continuously etching the fifth insulating film and the fourth insulating film under the same etching conditions after etching the sixth insulating film.
摘要翻译： 制造半导体器件包括制备包括具有第一区域和第二区域的半导体衬底的结构，布置在第一区域上的第一绝缘膜，布置在第一绝缘膜上的第二绝缘膜，布置在第二区域上的第三绝缘膜 绝缘膜，布置在第二区域上的第四绝缘膜，布置在第四绝缘膜上的第五绝缘膜和布置在第五绝缘膜上的第六绝缘膜，在不同的蚀刻条件下蚀刻第二绝缘膜和第一绝缘膜 在蚀刻第三绝缘膜之后，在蚀刻第六绝缘膜之后，在相同的蚀刻条件下连续蚀刻第五绝缘膜和第四绝缘膜。
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9.发明授权公开(公告)号：US09559136B2
公开(公告)日：2017-01-31
申请号：US14618937
申请日：2015-02-10
发明人： Aiko Kato , Yu Nishimura , Hiroaki Naruse , Keita Torii
IPC分类号： H01L27/146 , H01L21/02 , H01L21/311 , H01L21/768
CPC分类号： H01L27/14636 , H01L21/31116 , H01L21/31144 , H01L21/76804 , H01L21/76808 , H01L27/14612 , H01L27/1462 , H01L27/14627 , H01L27/14632 , H01L27/14638 , H01L27/14687 , H01L2221/1036
摘要： A semiconductor device manufacturing method includes a step of forming a hole reaching a first insulating layer over a first conductive member; a step of forming a trench reaching a second insulating layer and in communication with the hole; a step of forming an opening exposing the first conductive member in the hole; and a step of forming a second conductive member connected to the first conductive member by embedding a conductive material in the opening, the hole, and the trench. The trench is formed under an etching condition such that the etching rate with respect to the second insulating layer is lower than the etching rate with respect to the third insulating layer.
摘要翻译： 半导体器件制造方法包括在第一导电构件上形成到达第一绝缘层的孔的步骤; 形成到达第二绝缘层并与孔连通的沟槽的步骤; 形成在孔中露出第一导电构件的开口的步骤; 以及通过在开口，孔和沟槽中嵌入导电材料来形成连接到第一导电构件的第二导电构件的步骤。 在蚀刻条件下形成沟槽，使得相对于第二绝缘层的蚀刻速率低于相对于第三绝缘层的蚀刻速率。
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公开(公告)号：US09466627B2
公开(公告)日：2016-10-11
申请号：US14957352
申请日：2015-12-02
发明人： Aiko Kato , Kouhei Hashimoto , Seiichi Tamura
IPC分类号： H01L27/146
CPC分类号： H01L27/14623 , H01L27/14612 , H01L27/1463 , H01L27/14636 , H01L27/14656 , H01L27/14685 , H01L27/14689 , H04N5/357
摘要： In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.
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