公开(公告)号：US07320170B2

公开(公告)日：2008-01-22

申请号：US10827950

申请日：2004-04-20

Applicant: Stuart Kao ,  Chunping Luo ,  Chaopeng Chen ,  Takahiko Machita ,  Daisuke Miyauchi ,  Jei-Wei Chang

Inventor： Stuart Kao ,  Chunping Luo ,  Chaopeng Chen ,  Takahiko Machita ,  Daisuke Miyauchi ,  Jei-Wei Chang

IPC: G11B5/187 ,  C23F1/02

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F41/308 ,  Y10T29/49021 ,  Y10T29/49037 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.

Abstract translation: 将氙离子束与合适的掩模一起使用，将GMR堆叠离子研磨直到其一部分厚度不超过约0.1微米已经被去除，使得具有侧壁的基座包括垂直部分，该垂直部分包括全部 自由层已形成。 然后以通常的方式形成纵向偏置和导电引线层。 使用氙气作为溅射气体，可以更精确地控制铣削终止点。

公开(公告)号：US20050231856A1

公开(公告)日：2005-10-20

申请号：US10827950

申请日：2004-04-20

Applicant: Stuart Kao ,  Chunping Luo ,  Chaopeng Chen ,  Takahiko Machita ,  Daisuke Miyauchi ,  Jeiwei Chang

Inventor： Stuart Kao ,  Chunping Luo ,  Chaopeng Chen ,  Takahiko Machita ,  Daisuke Miyauchi ,  Jeiwei Chang

IPC: G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/32 ,  H01F41/30

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F41/308 ,  Y10T29/49021 ,  Y10T29/49037 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A GMR read pillar formed by ion milling has both vertical and sloping sidewall sections with the free layer normally being located within the latter. Using xenon as the sputtering gas enables the vertical section of the pedestal to be made longer, relative to the sloping portion, without requiring an increase in the sputtering rate, so the free layer can have vertical sidewalls. This allows the point at which milling is terminated to be controlled more precisely and, by more precisely defining the width of the free layer, also improves design tolerances.

Abstract translation: 通过离子铣削形成的GMR读柱具有垂直和倾斜的侧壁部分，自由层通常位于后侧。 使用氙作为溅射气体使得能够使基座的垂直部分相对于倾斜部分更长，而不需要增加溅射速率，因此自由层可具有垂直侧壁。 这允许更精确地控制铣削终点的点，并且通过更精确地限定自由层的宽度也提高了设计公差。