公开(公告)号：US07626184B2

公开(公告)日：2009-12-01

申请号：US12057117

申请日：2008-03-27

申请人： Bunji Mizuno ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

发明人： Bunji Mizuno ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

IPC分类号： H01L29/04 ,  G21K5/10

CPC分类号： H01L21/67167 ,  H01J37/32412 ,  H01L21/2236

摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

摘要翻译： 当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。 为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。 为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

公开(公告)号：US07582492B2

公开(公告)日：2009-09-01

申请号：US11597166

申请日：2005-05-19

申请人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Satoshi Maeshima ,  Ichiro Nakayama

发明人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Hiroyuki Ito ,  Tomohiro Okumura ,  Satoshi Maeshima ,  Ichiro Nakayama

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01L21/2236 ,  H01L21/0276

摘要： The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.

摘要翻译： 本发明提供掺杂杂质的方法，其包括通过使用等离子体掺杂法掺杂固体基质中的杂质的步骤，形成用于减少固体基体物质表面的光反射的光抗反射层的步骤， 以及通过光辐射进行退火的步骤。 根据该方法，能够降低退火时的光的反射率，有效地施加杂质掺杂层的能量，提高活化效率，防止扩散，降低杂质掺杂层的薄层电阻。

公开(公告)号：US20080258082A1

公开(公告)日：2008-10-23

申请号：US11666773

申请日：2005-10-27

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Satoshi Maeshima ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Bunji Mizuno

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Satoshi Maeshima ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Bunji Mizuno

IPC分类号： G21G5/00

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/2236 ,  H01L21/67069

摘要： It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6. A surface crystal layer of a silicon wafer 9 was rendered amorphous successfully by improving the structure of the sample-electrode 6.

摘要翻译： 本发明旨在提供一种能够提高薰蒸处理的均匀性的等离子体处理方法和装置。 通过排气孔12通过作为排气装置的涡轮分子泵3排出，将规定的气体从气体供给装置2经由气体入口11导入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。 从高频电源5将13.56MHz的高频电力供给到与样品电极6相对的电介质窗7附近设置的线圈8，由此在真空容器1内产生感应耦合等离子体 。 提供了用于向样品电极6提供高频电力的高频电源10，并且用作用于控制样品电极6的电位的电压源。 通过改善样品电极6的结构，使硅晶片9的表面晶体层成为非晶体。

公开(公告)号：US08652953B2

公开(公告)日：2014-02-18

申请号：US13560648

申请日：2012-07-27

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Ichiro Nakayama ,  Cheng-Guo Jin

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32458 ,  H01J37/32623 ,  H01J37/32633

摘要： In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

摘要翻译： 在根据本发明的等离子体掺杂装置中，在从气体供给装置引入预定气体的同时，通过排气口将涡轮分子泵作为排气装置抽真空室，以保持真空内部 通过压力调节阀到达预定压力。 13.56MHz的高频功率由高频电源提供给设置在与样品电极相对的电介质窗口附近的线圈，以在真空室中产生电感耦合等离子体。 提供了用于向样品电极提供高频电力的高频电源。 通过驱动闸门并覆盖通过门来增强处理的均匀性。

公开(公告)号：US07759254B2

公开(公告)日：2010-07-20

申请号：US10569464

申请日：2004-08-25

申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Cheng-Guo Jin ,  Hideki Tamura ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Bunji Mizuno ,  Hiroyuki Ito ,  Cheng-Guo Jin ,  Hideki Tamura ,  Ichiro Nakayama ,  Tomohiro Okumura ,  Satoshi Maeshima

IPC分类号： H01L21/302

CPC分类号： H01L21/02052 ,  H01L21/2236

摘要： A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), a step of removing a resist (S28), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S25a); a step of anneal (S26). The step of removing a resist (S28) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the resist. The step of cleaning (S25a) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate. The step of removing a resist (S28) and the step of cleaning (S25a) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate.

摘要翻译： 公开了一种形成杂质导入层的方法。 该方法至少包括在诸如硅衬底的固体衬底的主面上形成抗蚀剂图案的步骤（S27）; 通过离子模式的等离子体掺杂（S23）将杂质引入固体基板的步骤，去除抗蚀剂的步骤（S28），清洁附着在固体基板表面上的金属污染物和颗粒的步骤（S25a）; 退火步骤（S26）。 去除抗蚀剂的步骤（S28）用氧等离子体照射抗蚀剂，或者将硫酸和过氧化氢水的混合溶液，或NH 4 OH，H 2 O 2和H 2 O的混合溶液与抗蚀剂接触。 清洗步骤（S25a）将硫酸和过氧化氢水或NH 4 OH，H 2 O 2和H 2 O的混合溶液混合溶液与固体基质的主面接触。 除去抗蚀剂（S28）和清洗步骤（S25a）的步骤可以通过将硫酸和过氧化氢水的混合溶液或NH 4 OH，H 2 O 2和H 2 O的混合溶液与主要面接触来同时进行 固体基质。

公开(公告)号：US20100098837A1

公开(公告)日：2010-04-22

申请号：US12648142

申请日：2009-12-28

申请人： Tomohiro OKUMURA ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro OKUMURA ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： C23C16/52 ,  H05H1/24 ,  C23C16/448

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

摘要翻译： 旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。 将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8， 与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

公开(公告)号：US07622725B2

公开(公告)日：2009-11-24

申请号：US12122492

申请日：2008-05-16

申请人： Bunji Mizuno ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

发明人： Bunji Mizuno ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

IPC分类号： G21K1/093 ,  H01J37/08

CPC分类号： H01L21/67167 ,  H01J37/32412 ,  H01L21/2236

摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

公开(公告)号：US20090140174A1

公开(公告)日：2009-06-04

申请号：US11887371

申请日：2006-03-29

申请人： Bunji Mizuno ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

发明人： Bunji Mizuno ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

IPC分类号： H01J37/317 ,  H01J37/32

CPC分类号： H01L21/67167 ,  H01J37/32412 ,  H01L21/2236

摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision.In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

摘要翻译： 当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。 为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。 为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

公开(公告)号：US20090068769A1

公开(公告)日：2009-03-12

申请号：US11887821

申请日：2006-04-04

申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

IPC分类号： H01L21/66 ,  G21K5/00

CPC分类号： H01J37/32935 ,  H01J37/321 ,  H01J37/32412

摘要： An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample.Predetermined gas is exhausted via an exhaust port 11 by a turbo-molecular pump 3 while introducing the gas within the vacuum chamber 1 from a gas supply device 2, and the pressure within the vacuum chamber 1 is kept at a predetermined value by a pressure regulating valve 4. A high-frequency power supply 5 for a plasma source supplies a high-frequency power to a coil 8 provided near a dielectric window 7 to generate inductively coupled plasma within the vacuum chamber 1. A high-frequency power supply 10 for the sample electrode for supplying the high-frequency power to the sample electrode 6 is provided. A matching circuit 13 for the sample electrode and a high-frequency sensor 14 are provided between the sample electrode high-frequency power supply and the sample electrode 6. An ion current applied to the surface of a sample can be accurately monitored buy using the high-frequency sensor 14 and an arithmetic device 15.

摘要翻译： 本发明的目的是提供一种等离子体处理的方法和装置，其可以精确地监测施加在样品表面上的离子电流。 通过涡轮分子泵3通过排气口11排出预定气体，同时从气体供给装置2将真空室1内的气体导入，并通过压力调节将真空室1内的压力保持在规定值 用于等离子体源的高频电源5向设置在电介质窗口7附近的线圈8提供高频电力，以在真空室1内产生电感耦合等离子体。一高频电源10用于 提供了用于向样品电极6提供高频电力的样品电极。 在样品电极高频电源和样品电极6之间设置用于采样电极和高频传感器14的匹配电路13。可以使用高电平来准确地监测施加到样品表面的离子电流 频率传感器14和运算装置15。

公开(公告)号：US20090023262A1

公开(公告)日：2009-01-22

申请号：US11659197

申请日：2005-08-03

申请人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Hiroyuki Ito ,  Bunji Mizuno

发明人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Hiroyuki Ito ,  Bunji Mizuno

IPC分类号： H01L21/336

CPC分类号： H01L21/2236 ,  H01L21/268 ,  H01L21/28061 ,  H01L29/66575

摘要： To provide a fine transistor of high precision. A method for fabricating a transistor comprises the step of forming a gate electrode (340) on the surface of a semiconductor substrate, the step of introducing an impurity across said gate electrode (340), and the step of activating said impurity, thereby to form a source/drain region (310, 320) in the region having said impurity introduced thereinto. In the transistor fabricating method, the step of introducing said impurity includes a plasma irradiating step. The method further comprises the step of forming, prior to said activating step, a reflection preventing film (400) on the surface of the region having said impurity introduced thereinto, so that the optical reflectivity of said impurity introduced region may be lower than the reflectivity of said gate electrode surface.

摘要翻译： 提供高精度的精细晶体管。 一种制造晶体管的方法包括在半导体衬底的表面上形成栅电极（340）的步骤，将杂质引入所述栅电极（340）的步骤和激活所述杂质的步骤，形成 在其中引入了所述杂质的区域中的源/漏区（310,320）。 在晶体管制造方法中，引入所述杂质的步骤包括等离子体照射步骤。 该方法还包括在所述激活步骤之前形成在其中引入了所述杂质的区域的表面上的反射防止膜（400）的步骤，使得所述杂质引入区域的光学反射率可能低于反射率 的所述栅电极表面。