摘要:
An image sensor includes a plurality of pixels overlaid with a color filter pattern of at least two colors having the same color on every other pixel in one direction; three or more charge-coupled devices oriented parallel to the every other pixel color filter repeat pattern; a charge sensing amplifier at the output of at least two of the charge couple devices; each charge-coupled device having a first and a second gate; a CCD-to-CCD transfer gate connecting adjacent charge-coupled devices with the first gate being on one side of the CCD-to-CCD transfer gate and the second gate being on the opposite side of the CCD-to-CCD transfer gate; all CCD-to-CCD transfer gates are electrically connected together; all first gates are electrically connected; and all second gates are electrically connected.
摘要:
An image sensor includes a unit cell of four pixels. The unit cell includes four photosensitive regions that collect charge in response to light; four transfer transistors that respectively pass the charge from each of the four photosensitive regions to one common charge-to-voltage conversion mechanism; three control wires in which a first control wire controls two of the transfer transistors and a second control wire controls one of the transfer transistors and a third control wire controls one of the transfer transistors; an amplifier connected to the common charge-to-voltage conversion mechanism that outputs an output signal in response to a signal from the charge-to-voltage conversion mechanism; and a reset transistor connected to the common charge-to-voltage conversion mechanism for resetting the charge-to-voltage conversion mechanism to a predetermined signal level.
摘要:
A method for reading out charge from an interlined CCD having a plurality of photo-sensing regions and a plurality of vertical shift registers, and each photosensitive region is mated respectively to a CCD of a vertical shift register and a color filter having a repeating pattern of two rows in which each row includes at least two colors spanning the photo-sensing regions, the method includes reading out one row from each of the two row pattern; summing the same color from each row in the vertical shift register to reduce the resolution by one half; without transferring charge out of the vertical shift register, repeating the reading and summing steps for the remaining row; and reading out the charge in the vertical shift registers in a manner in which different colors are not summed together.
摘要:
An output circuit in a charge-coupled device (CCD) image sensor includes a charge-to-voltage conversion region, a gain control transistor connected to the charge-to-voltage conversion region and a reset transistor connected in series with the gain control transistor. One or more additional gain control transistors can be connected between the reset transistor and the gain control transistor. The one or more gain control transistors are used to set a capacitance of the charge-to-voltage conversion region to two or more difference capacitance levels. For each capacitance level, a reset voltage and a signal voltage are measured from the charge-to-voltage conversion region. A signal processing device computes multiple signal values for a single charge packet using the measured reset and signal voltages. The signal processing device selects one of the multiple signal values to be the signal value for the pixel.
摘要:
An image sensor that includes a plurality of pixels disposed on a substrate, each pixel includes at least one photosensitive region that collects charges in response to incident light; a charge-to-voltage conversion node for sensing the charge from the at least one photosensitive region and converting the charge to a voltage; an amplifier transistor having a source connected to an output node, having a gate connected to the charge-to-voltage conversion node and having a drain connected to at least a portion of a power supply node; and a reset transistor connecting the output node and the charge-to-voltage conversion node.
摘要:
A method for reducing dark current within a charge-coupled device, the method includes each gate phase n having a capacitance Cn, voltage change on the gate phase n given by ΔVn such ∑ n C n Δ V n ≅ 0 ; for the first time period, maintaining a set of first gate phases holding charge in the accumulated state and maintaining a set of second gate phases not holding charge in the depleted state; for a second time period, clocking the charge into a set of third gate phases in the depleted state and clocking the second set of gate phases not holding charge into the accumulated state; for a third time period, clocking the third set of gate phases holding the charge into the accumulated state and clocking a fourth set of gates not holding the charge into the depletion state; wherein the second time period is shorter than the first and third time periods.
摘要翻译:一种用于减小电荷耦合器件内的暗电流的方法,该方法包括:具有电容Cn的栅极相n,栅极相位n上的电压变化由&Dgr; Vn给出,如Σn C n&Dgr; 唔V n≅0; 在第一时间段中,保持一组第一栅极相位保持处于累积状态的电荷并保持一组不保持电荷的第二栅极相位在耗尽状态; 在第二时间段中,将电荷计时到耗尽状态的一组第三栅极相位,并且将不保持电荷的第二组栅极相位计时到累积状态; 在第三时间段中,将保持电荷的第三组栅极相位计时到累积状态,并将不保持电荷的第四组栅极计时到耗尽状态; 其中所述第二时间段比所述第一和第三时间段短。
摘要:
An image sensor includes (a) a plurality of pixels, wherein each pixel comprises: (i) at least one photosensor; (ii) at least one transfer gate connecting the photosensor to a floating diffusion; (iii) an output transistor connected to the floating diffusion; (iv) a first reset transistor connected between the floating diffusion and a summing node; (v) a second reset transistor connected to the summing node; and (b) a first summing transistor connecting together the summing nodes of two or more pixels.
摘要:
An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.
摘要:
A method for reading out charge from an interlined CCD having a plurality of photo-sensing regions and a plurality of vertical shift registers, and each photosensitive region is mated respectively to a CCD of a vertical shift register and a color filter having a repeating pattern of two rows in which each row includes at least two colors spanning the photo-sensing regions, the method includes reading out one row from each of the two row pattern; summing the same color from each row in the vertical shift register to reduce the resolution by one half; without transferring charge out of the vertical shift register, repeating the reading and summing steps for the remaining row; and reading out the charge in the vertical shift registers in a manner in which different colors are not summed together.
摘要:
An image sensor for capturing an image includes a photosensitive area for receiving incident light; a substance placed covering a portion of the photosensitive area which substance includes a first index of refraction; and a plurality of electrodes positioned adjacent the substance having a dielectric placed between a portion of the electrodes, which dielectric includes a second index of refraction lower than the first index of refraction.