公开(公告)号：US20190148602A1

公开(公告)日：2019-05-16

申请号：US15809213

申请日：2017-11-10

Applicant: Cree, Inc.

Inventor： Linjia Mu ,  Kenneth Lotito ,  Ryan Gresback

IPC: H01L33/50 ,  F21K9/20 ,  C09K11/61 ,  C09K11/02

CPC classification number: H01L33/502 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/025 ,  C09K11/616 ,  C09K11/665 ,  F21K9/20 ,  H01L51/502 ,  Y10S977/774 ,  Y10S977/788 ,  Y10S977/831 ,  Y10S977/892 ,  Y10S977/95

Abstract: Stabilized luminescent nanoparticles for light emitting diode applications comprise perovskite nanocrystals encapsulated by an oxide coating, where the oxide coating includes ligand remnants comprising one or more elements selected from the group consisting of: nitrogen, carbon, phosphorus, and sulfur. A method of making the stabilized luminescent nanoparticles comprises dispersing perovskite nanocrystals and crosslinking ligands in a non-polar solvent to form a first mixture. Each of the crosslinking ligands comprises a head end and a tail end; the head ends attach to the perovskite nanocrystals and the tail ends remain unattached and available for crosslinking. An oxide precursor comprising crosslinking functional groups is added to the first mixture, and the crosslinking functional groups attach to the tail ends of the crosslinking ligands. Thus, an oxide coating is formed on the perovskite nanocrystals.

公开(公告)号：US09780266B2

公开(公告)日：2017-10-03

申请号：US15196906

申请日：2016-06-29

Applicant: Cree, Inc.

Inventor： Kenneth Lotito ,  Ryan Gresback ,  Paul Fini ,  James Ibbetson ,  Bernd Keller

IPC: H01L33/50 ,  H01L33/52 ,  H01L33/48 ,  H01L33/60 ,  B82B1/00 ,  B82B3/00 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88

CPC classification number: H01L33/505 ,  B82B1/00 ,  B82B3/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L33/483 ,  H01L33/502 ,  H01L33/52 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cm2 at a temperature of 80-85° C. and relative humidity of 5% for 500 hours.

公开(公告)号：US20170005241A1

公开(公告)日：2017-01-05

申请号：US15196906

申请日：2016-06-29

Applicant: Cree, Inc.

Inventor： Kenneth Lotito ,  Ryan Gresback ,  Paul Fini ,  James Ibbetson ,  Bernd Keller

IPC: H01L33/50 ,  H01L33/48 ,  H01L33/60 ,  H01L33/52

CPC classification number: H01L33/505 ,  B82B1/00 ,  B82B3/00 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L33/483 ,  H01L33/502 ,  H01L33/52 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A stabilized quantum dot structure for use in a light emitting diode (LED) comprises, according to one embodiment, a luminescent particle comprising one or more semiconductors, a buffer layer overlying the luminescent particle, where the buffer layer comprises an amorphous material, and a barrier layer overlying the buffer layer, where the barrier layer comprises oxygen, nitrogen and/or carbon. According to another embodiment, the stabilized quantum dot structure includes a luminescent particle comprising one or more semiconductors, and a treated buffer layer comprising amorphous silica overlying the luminescent particle, where the stabilized quantum dot structure exhibits a quantum yield of at least about 0.7 when exposed to a blue light flux of about 30 W/cm2 at a temperature of 80-85° C. and relative humidity of 5% for 500 hours.

Abstract translation: 根据一个实施例，用于发光二极管（LED）的稳定的量子点结构包括：包含一个或多个半导体的发光颗粒，覆盖发光颗粒的缓冲层，其中缓冲层包括无定形材料，以及 阻挡层覆盖缓冲层，其中阻挡层包括氧，氮和/或碳。 根据另一个实施方案，稳定的量子点结构包括包含一个或多个半导体的发光粒子，以及包含覆盖发光粒子的无定形二氧化硅的经处理的缓冲层，其中稳定的量子点结构在暴露时显示出至少约0.7的量子产率 在80-85℃的温度和5％的相对湿度下达到约30W / cm 2的蓝光通量500小时。