摘要:
A method for purifying organosilicon precursor compounds is provided. It includes preparation of the adsorbent with a treating compound. The thus-treated adsorbents can be used to remove impurities such as organic impurities and moisture from a composition containing an organosilicon containing compound. In this manner, it is able to purify organosilicon precursors (or solutions containing organosilicon precursors) without inducing decomposition of the organosilicon precursor.
摘要:
Apparatus and processes are presented to contact a dry, preferably high purity inert gas with a chemical composition in a pressure vessel, or a wetting composition, to form a wet inert gas, which is then used to pressurize the chemical composition out of the pressure vessel. No additional space is needed for an external humidifier. Since a very small amount of vapor is needed to form a wet inert gas, the composition of chemical composition will not be significantly affected.
摘要:
Provided are a method and apparatus for measuring particles in a liquid sample. The method involves introducing a liquid sample into a heat exchanger, thereby cooling the sample to a predetermined temperature. A particle measurement is performed on the cooled sample by introducing the cooled sample into a particle detector. The method and apparatus in accordance with the invention effectively suppress bubbles present in a liquid chemical sample being measured, thereby allowing for accurate particle measurements. The invention has particular applicability in the semiconductor and pharmaceutical manufacturing industries.
摘要:
An apparatus and method for holding a solid precursor in a sublimator such that the solid precursor can be vaporized for saturating a carrier gas. The apparatus may include alternating disks or shelves that form inner and outer passages, as well as spaces between the disks for fluidicly coupling the passages to create a winding, tortuous fluid flow path through the sublimator for optimizing solid vapor saturation. The method may include directing a carrier gas into a sublimation chamber, around the first shelf in the outer passage, over the first shelf in the space, around the second shelf in the inner passage, and back out of the sublimation chamber.
摘要:
A method for purifying organosilicon precursor compounds is provided. It includes preparation of the adsorbent with a treating compound. The thus-treated adsorbents can be used to remove impurities such as organic impurities and moisture from a composition containing an organosilicon containing compound. In this manner, it is able to purify organosilicon precursors (or solutions containing organosilicon precursors) without inducing decomposition of the organosilicon precursor.
摘要:
A system for damping pressure pulses is provided, including a channel for permitting fluid flow between a first chamber and a second chamber, a piston for varying a fluid flowing space such that pressure pulses in fluid are damped, and a flexible wall for absorbing pressure pulses in fluid, wherein the flexible wall is connected to the piston by a transmitting rod such that a movement of the piston results in a deformation of the flexible wall and vice versa.
摘要:
Novel methods and additives for stabilizing one or more cyclotetrasiloxane compounds for use in silicon film deposition are described herein. The disclosed methods and additives may utilize silicon-containing compounds to inhibit polymerization of one or more cyclotetrasiloxanes. In an embodiment, a method of stabilizing one or more cyclotetrasiloxane compounds for use in silicon film deposition comprises adding one or more additives to the one or more cyclotetrasiloxane compounds to inhibit polymerization of the cyclotetrasiloxane compound. The one or more additives may comprise an acrylate, a methacrylate, or a silane compound having the formula: where R1-R4 may each independently be an alkyl group, an alkoxy group, a heterocyclic group, an acryloxy group, a vinyl group, an epoxy group, a glycidyloxy group, or a hydrogen. R1-R4 may be the same or different from each other. The one or more additives may also comprise combinations of the above mentioned compounds.
摘要:
Provided is a novel system for vaporizing and purifying a gas to produce ultrapure chemical gases employed at a semiconductor processing facility. The system includes a liquified gas source, a vaporization purification bed, and a buffer tank. The liquefied gas source is in communication with the vaporization purification bed to provide a liquefied gas to the bed with an ultra-pure chemical gas generated in the purification bed. The purified gas is subsequently routed to a buffer tank and to a point of use therefrom.
摘要:
Provided is a novel on-site system and method for providing ultra-high-purity nitric acid to a point of use. The system includes a source of nitric acid at a concentration greater than 68 wt %; a reflux distillation column having an inlet in communication with the nitric acid source for introducing nitric acid into the column, a reboiler, and a condensate outlet to provide a flow of nitric acid condensate from the column; a reservoir in communication with the condensate outlet for receiving the flow of nitric acid condensate; and piping for delivering nitric acid from the reservoir to a point of use. The system and method can be used as an on-site subsystem, in a semiconductor device fabrication facility for supplying the nitric acid condensate to points of use in the semiconductor device fabrication facility.